An Algorithm for Tailoring of Nanoparticles by Double Angle Resolved Nanosphere Lithography

2015 ◽  
Vol 1748 ◽  
Author(s):  
Christoph Brodehl ◽  
Siegmund Greulich-Weber ◽  
Jörg K. N. Lindner
Keyword(s):  
Atomic Force Microscopy ◽  
Ray Tracing ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Nanosphere Lithography ◽  
Major Influence ◽  
Large Area ◽  
Precise Description ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTNanosphere lithography (NSL) is a technique capable of creating large-area arrays of small objects with tailor-made shapes. Here we present an algorithm, which simulates the shape and morphology of nanoparticles produced via NSL in combination with physical vapor deposition from variable angles. The key idea is based on a ray-tracing technique. Mask clogging effects have a major influence on the shape of resulting nanoobjects and are therefore taken into account. In addition, we implemented a metaball concept for the precise description of thermally modified masks. The calculated results are compared exemplarily with atomic force microscopy (AFM) data of experimentally fabricated nanostructures.

scholarly journals Methods of preparation and temporal stability of GaSe and InSe nanolayers

2020 ◽  
pp. 50-54
Author(s):  
R.A. Redkin ◽  
◽  
D.A. Kobtsev ◽  
S.A. Bereznaya ◽  
Z.V. Korotchenko ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Temporal Stability ◽  
Silicon Substrates ◽  
Mechanical Exfoliation ◽  
Force Microscopy ◽  
Atomic Force

GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the position of the peaks known for bulk and nanolayered InSe and GaSe samples

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Investigation of surface morphology of thin metal films with magnetic layers Fe-Cr-Co

2021 ◽  
Author(s):  
V.S. Zayonchkovsky ◽  
Aung Kyaw Kyaw ◽  
A.V. Andreev
Keyword(s):  
Atomic Force Microscopy ◽  
Magnetron Sputtering ◽  
Electron Microscopic Examination ◽  
Nearest Neighbors ◽  
Substrate Plane ◽  
Large Area ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Large Projection

Films containing layers of dispersion-hardening alloys (LDHA) based on the Fe-Cr-Co system were obtained by magnetron sputtering. LDHA acquire the properties of film permanent magnets after a single-stage «fast» high-vacuum annealing. Bulk materials acquire such properties only after many hours of multi-stage heat treatment. The film samples acquire these properties in tens of seconds. The morphology of their surface was studied to determine the origin of the coercive force of film samples. The surface morphology was studied using high resolution scanning electron microscopy and atomic force microscopy. We studied two compositions that, in bulk, have a different tendency to form many phases during crystallization. In magnetron sputtering, the alloy in which a multiphase state is easily formed is polycrystalline. The antipode alloy in magnetron sputtering is realized in an amorphous state. After annealing, both alloys are in a polycrystalline state. Electron microscopic examination showed that as a result of annealing, crystallites are formed with a large projection onto the substrate plane, which grow due to the nearest neighbors. Moreover, these crystallites have not only a large area, but also a height. After annealing, both alloys are in a polycrystalline state. Electron microscopic examination showed that as a result of annealing, crystallites are formed with a large projection onto the substrate plane, which grow due to the nearest neighbors. Moreover, these crystallites have not only a large area, but also a height. What is determined by atomic force microscopy. High crystallites are also faceted. This may indicate that the composition of these crystallites differs from the composition of the surrounding layer, which may be the reason for the increase in coercive force as a result of annealing.

Tip-induced large-area oxide bumps and composition stoichiometry test via atomic force microscopy

2007 ◽  
Vol 601 (18) ◽  
pp. 3788-3791 ◽  
Author(s):  
Yo-Shan Lu ◽  
Hsin-I Wu ◽  
Sheng Yun Wu ◽  
Yuan-Ron Ma
Keyword(s):  
Atomic Force Microscopy ◽  
Large Area ◽  
Force Microscopy ◽  
Atomic Force

Surface Cusp Formation in Si Homoepitaxy

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
X. Wu ◽  
M. Beaulieu ◽  
D.J. Lockwood ◽  
N.L. Rowell
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Surface Density ◽  
Growth Direction ◽  
Low Energy ◽  
Large Area ◽  
Columnar Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Si Films

ABSTRACTWe report a study of the surface morphology and microstructure of Si epitaxial layers grown by MBE on (001) Si at temperatures at which epitaxy breakdown is observed. For films grown in the 400 - 450 °C temperature range the epitaxy breakdown is very sluggish and characterized by a columnar growth and the formation of surface cusps. We have used atomic force microscopy to study the shape, size and distribution of those surface cusps. Surface cusps are of square shape with sides predominantly oriented along <110> directions and are typically of 50 nm size and 5 nm depth. The cusps can be very regular in size and their surface density (typically of 109-1010 cm-2) is dependent on the growth temperature. The epitaxial Si in this temperature regime exhibits a residual strain of the order of -5 × 10−5 in the growth direction. Photoluminescence (PL) from cusped Si films is characterized by a broad PL at low energy possibly due to impurities incorporation at low growth temperatures. We have observed that Ge self-assembled dots can be grown on cusped surfaces. Large area AFM measurements reveal that surface cusps are “decorated” by clusters of large dome-like Ge dots, while a lower density of smaller dome and pyramid shape islands are seen away from the cusps.

Atomic Force Microscopy Study of Initial Nucleation in the Deposition OF μc-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
P. Brogueira ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Microscopy Study ◽  
Dark Conductivity ◽  
Rf Plasma ◽  
Hydrogen Treatment ◽  
Force Microscopy ◽  
Atomic Force

AbstractThe initial stages of microcrystalline silicon growth of n+ doped films prepared by rf plasma enhanced chemical vapor deposition (PECVD) and of intrinsic films prepared by hot-wire chemical vapor deposition (HW-CVD) are studied using atomic force microscopy, Raman spectroscopy and parallel dark conductivity measurements. The effect of the use of a plasma hydrogen treatment, of chamber conditioning prior to this treatment, of the type of substrate (glass or c-Si) used and the effects of a seed layer on the film properties are discussed.

Straining Effects in Silica-Filled Elastomers Investigated by Atomic Force Microscopy: From Macroscopic Stretching to Nanoscale Strainfield

2003 ◽  
Vol 76 (1) ◽  
pp. 60-81 ◽  
Author(s):  
A. Lapra ◽  
F. Clément ◽  
L. Bokobza ◽  
L. Monnerie
Keyword(s):  
Atomic Force Microscopy ◽  
Strain Field ◽  
Local Concentration ◽  
Macroscopic Strain ◽  
Precise Description ◽  
Force Microscopy ◽  
Filled Elastomers ◽  
Atomic Force ◽  
Different Strains ◽  
Very High

Abstract Understanding the way fillers can reinforce elastomers requires, among other things, requires a precise description of the behavior of filler aggregates when a macroscopic strain is applied. In this study, Atomic Force Microscopy was used to investigate samples of SBR and PDMS filled with silica. The samples were stretched uniaxially at different strain values (up to 145%) and imaged by Atomic Force Microscopy. The distances between aggregates were followed at the different strains, which allowed calculation of the local strains and comparison of the values obtained with the macroscopic strain value. The main results are (i) that the strain field is highly heterogeneous, depending on the local concentration of filler and (ii) that the strain undergone by elastomer chains can be very high locally, in the regions where distances between aggregates are very short.

Evolution of TiN Coating Surface Roughness during Physical Vapor Deposition on High Speed Steel Substrate

2014 ◽  
Vol 604 ◽  
pp. 67-70
Author(s):  
Leonid Kupchenko ◽  
Rauno Tali ◽  
Eron Adoberg ◽  
Valdek Mikli ◽  
Vitali Podgursky
Keyword(s):  
Surface Roughness ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Speed ◽  
Steel Substrate ◽  
High Speed Steel ◽  
Growth Exponent ◽  
Force Microscopy ◽  
Tin Coatings ◽  
Atomic Force

TiN coatings with different thickness were prepared by arc ion plating (AIP) physical vapor deposition (PVD) on high speed steel (HSS) substrates. TiN coatings surface roughness was investigated by atomic force microscopy (AFM) and 3D optical profilometry and growth kinetics was described using scaling exponents β and α. The growth exponent β is 0.91-1.0 and the roughness exponent α is 0.77-0.81. Due to relatively high value of the exponent α, the surface diffusion is likely predominant smoothening mechanism of TiN growth.

Morphology of twinned diamond particles

1995 ◽  
Vol 10 (12) ◽  
pp. 3037-3040 ◽  
Author(s):  
Long Wang ◽  
John C. Angus ◽  
David Aue
Keyword(s):  
Atomic Force Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Force Microscopy ◽  
Angle Measurements ◽  
Atomic Force ◽  
Surface Normal ◽  
Normal Algorithm ◽  
Diamond Particles

Morphology of twinned diamond particles grown by chemical vapor deposition was characterized by atomic force microscopy in both contact and tapping modes. Quantitative angle measurements using a surface normal algorithm were performed on untwinned crystals, penetration twins, re-entrant corners, and fivefold dimples. Tip-sample interaction is discussed. The morphology of the penetration twins and some of the re-entrant corners can be explained by low order Σ3 twins and flat crystallographic surfaces. Abnormally shallow re-entrants with large vicinal faces are attributed to rapid nucleation of new layers at a point along the re-entrant intersection.

Sign in / Sign up

Export Citation Format

Share Document