Growth and characterization of Titanium Niobium Oxide (TiNb2O7) thin films

2015 ◽  
Vol 1805 ◽  
Author(s):  
Venkateswarlu Daramalla ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Laser Fluence ◽  
Photoelectron Spectroscopy ◽  
Binding Energies ◽  
Experimental Conditions ◽  
Monoclinic Crystal

ABSTRACTComprehensive studies were done on the growth and characterization of TiNb2O7 (TNO) complex oxide thin films by pulsed laser deposition for the first time. The TNO thin films were successfully grown on Pt(200)/TiO2/SiO2/Si(100) substrates. The structure, surface morphology and chemical properties of as-grown thin films were studied as function of deposition temperature, pressure and laser fluence. The GIXRD and HRTEM analyses revealed that the as-grown TNO films were in the monoclinic crystal structure and independent of laser fluence. The HAADF STEM elemental mapping confirms the uniform composition of Ti, Nb and O in TNO thin films. The atomic force microscopy and field emission scanning microscopy shows that, the surface morphology and microstructure of TNO films varied significantly with respect to experimental conditions. The X-ray photoelectron spectroscopy quantitative results indicated that the binding energies of Ti and Nb elements shifted towards right with increasing oxygen partial pressure. The effects of oxygen partial pressure and laser fluence on as-grown TNO films were studied.

Growth and Characterization of ZnO Thin Films Grown by Pulsed Laser Deposition

2011 ◽  
Vol 383-390 ◽  
pp. 6289-6292
Author(s):  
Jian Ting He ◽  
Bo Xue Tan ◽  
Qin Qin Wei ◽  
Yuan Bin Su ◽  
Shu Lian Yang
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
X Ray ◽  
Partial Pressures

ZnO thin films were deposited on n-Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD). X-ray diffraction (XRD), scanning electron microscopy (SEM) were used to analyze the influence of the oxygen partial pressure on the crystallization and morphology of the ZnO thin films. An optimal crystallized ZnO thin film was observed at the oxygen partial pressure of 6.5Pa. X-ray photoelectron spectroscopy (XPS) was used to analyze the surface components and distribution status of various elments in ZnO thin films. It was found that ZnO thin films were grown in Zn-rich state.

Effects of Oxygen Partial Pressure on the Properties of SnOx Thin Films Doped with Indium

2021 ◽  
Vol 16 (5) ◽  
pp. 819-826
Author(s):  
Myeong Kyun Lyou ◽  
Hyunki Kim ◽  
SeoGwon Kim ◽  
Byung Seong Bae ◽  
Eui-Jung Yun
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hall Effect ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Hall Effect Measurement ◽  
Amorphous Structure ◽  
X Ray ◽  
Hall Effect Measurements

This study examined the effects of the oxygen partial pressure on the properties of heavily indium-doped tin-oxide (In-SnOx) thin films grown at room temperature by reactive direct-current pulse sputtering from a mixed metallic target containing Sn (70 atomic %)-In (30 atomic %). X-ray photoelectron spectroscopy (XPS), dynamic secondary-ion mass spectrometry, X-ray diffraction (XRD), and Hall Effect measurements showed that the In-SnOx samples prepared with oxygen pressures of 10–20% had metallic properties. This was attributed to the notable Sn0 area ranges of 5.6–17.3%, low resistivity ranges of 5.5×10−3–2×10−4 Ωcm, and the high carrier concentration ranges of 3.5×1021–5.1×1022/cm3. On the other hand, the Sn4+ area and the resistivity increased significantly to 73.3% and 9.4 Ωcm. In comparison, the Sn2+ area and the electron concentration decreased dramatically to 23.6% and 6.5×1016/cm3, respectively, with increasing oxygen partial pressure up to 30%. The samples prepared with oxygen pressures higher than 20% exhibited nonmetallic properties with the dominant n-type SnO2 phase. This steep increase in the Sn4+ area was attributed to an increase in the oxygen contents in the samples, resulting in a decrease in the number of oxygen vacancy donors in the samples prepared with oxygen pressures higher than 20%. The decrease in the Sn2+ area was related to a decrease in the indium (In) contents in the samples, which also decreased the number of metal acceptors in the samples. XRD also showed that the metallic indium stannide (In0.2Sn0.8) and In–Sn–O(ITO) peaks coexisted for samples prepared with an oxygen pressure of 0–10%. In contrast, the samples prepared with oxygen pressures higher than 20% had an amorphous structure with SnO2 and SnO phases, supporting the XPS and Hall Effect measurement results.

In situ characterization of strontium surface segregation in epitaxial La0.7Sr0.3MnO3 thin films as a function of oxygen partial pressure

2008 ◽  
Vol 93 (15) ◽  
pp. 151904 ◽  
Author(s):  
Tim T. Fister ◽  
Dillon D. Fong ◽  
Jeffrey A. Eastman ◽  
Peter M. Baldo ◽  
Matthew J. Highland ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Surface Segregation ◽  
In Situ Characterization

Preparation of YBa2Cu4O8 Thin Films by MOCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
H. Sakai ◽  
H. Hayashi ◽  
K. Uehara ◽  
N. Kubota ◽  
T. Sugimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Grain Growth ◽  
Single Phase ◽  
Film Surface ◽  
Surface Step ◽  
Composition Ratio ◽  
Sem And Tem

ABSTRACTPreparation processing to obtain 124 single phase films has been studied by MOCVD. The YBCO thin films which were fabricated on MgO(100) and SrTiO3(100) substrates, respectively, were obtained under both conditions of Ts(temperature of susceptor)=800°C and Po2(oxygen partial pressure)=17.5torr. It was found that the oriented peaks of 124 c-axis and of 123 a-axis were more prominent than others at the composition ratio(Y/Ba/Cu=l.0/2.7/4.7), using the MgO(100) substrates. The 123 a-axis oriented grain was observed by using SEM and TEM. We have obtained thin films which were dominant in the 124 phase on the SrTiO3(100) substrates. The film surface morphology on the SrTiO3(100) substrate was smoother than that on the MgO(100) substrate. The origin of a-axis oriented grain growth was explained by the surface step(about 10 À) on MgO(100).

Preparation of Pure Anatase TiO2 Thin Films by DC Sputtering Technique: Study on the Effect of Oxygen Partial Pressure

2012 ◽  
Vol 463-464 ◽  
pp. 1415-1419 ◽  
Author(s):  
P. Pungboon Pansila ◽  
Nirun Witit-Anun ◽  
Tongsai Jamnongkan ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power ◽  
Effect Of Oxygen ◽  
Titanium Dioxide Thin Films

Titanium dioxide thin films were deposited by DC reactive magnetron sputtering on silicon wafer and glass slide at sputtering power of 210 watt under total pressure of 5.0×10-3 mbar at different oxygen partial pressure. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The crystal structure and surface morphology were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmission was measured by spectrophotometer. The results show that the crystalline was pure anatase structure titanium dioxide thin films. The surface morphology of the films is strongly the oxygen partial pressure. It was found that surface roughness of the thin films was around 2.42 to 4.82 nm and the thickness was around 72 to130 nm. In addition, it was found that all the titanium dioxide thin films were deposited by reactive sputtering with the different oxygen pressure exhibit the transparency property.

scholarly journals Tunable Optical Properties of Amorphous-Like Ga2O3 Thin Films Deposited by Electron-Beam Evaporation with Varying Oxygen Partial Pressures

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1760
Author(s):  
Shijie Li ◽  
Chen Yang ◽  
Jin Zhang ◽  
Linpeng Dong ◽  
Changlong Cai ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Electron Beam ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Photoelectron Spectroscopy ◽  
Test System ◽  
Electron Beam Evaporation ◽  
X Ray ◽  
Ga2o3 Film

Ga2O3 thin films were fabricated by the electron-beam evaporation technique at a varying oxygen partial pressure from 0 to 2.0 × 10−2 Pa. The effect of oxygen partial pressure on the crystalline structure and optical properties of the Ga2O3 films was analyzed using sophisticated techniques including X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Raman spectroscopy, spectroscopic ellipsometry, ultraviolet-visible spectroscopy and a laser-induced damage test system. The correlation between the oxygen partial pressure and the film’s properties in optics and materials were investigated. XRD and Raman revealed that all films were amorphous in spite of applying a varying oxygen partial pressure. With the change of oxygen partial pressure, XPS data indicated that the content of oxygen in the Ga2O3 films could be broadly modulable. As a result, a changeable refractive index of the Ga2O3 film is realizable and a variable blue-shift of absorption edges in transmittance spectra of the films is achievable. Moreover, the damage threshold value varied from 0.41 to 7.51 J/cm2 according to the rise of oxygen partial pressure. These results demonstrated that the optical properties of Ga2O3 film can be broadly tunable by controlling the oxygen content in the film.

Metal Organic Deposition of REBa2Cu3O7-y Films from Metal Trifluoroacetate Precursors

2000 ◽  
Vol 659 ◽  
Author(s):  
Tetsuji Honjo ◽  
Hiroshi Fuji ◽  
Daxiang Huang ◽  
Yuichi Nakamura ◽  
Teruo Izumi ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Crystal Growth ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Experimental Results ◽  
Experimental Conditions ◽  
Metal Organic ◽  
Metal Organic Deposition

ABSTRACTMetal organic deposition (MOD) process using metal trifluoroacetate (TFA) precursors was applied to the Nd1+XBa2−XCu3Oy (Nd123) and the Tc dependence on experimental conditions such as the oxygen partial pressure (PO2) and the substrate temperature (Ts) for annealing was investigated. Thin films grown on SrTiO3 substrates at Ts = 800°C under PO2 = 300 ppm showed a Tc value of 89 K. However, from the results of TEM-EDS measurements, the substitution values of x in the Nd123 films increased from the substrate toward the surface in the film. These experimental results could be thermodynamically explained by the following model. The basic idea of the model is that the Ba potential in the precursor decreases by coarsening of BaF2 particles during the annealing for the Nd123 crystal growth. This model predicts that the small substitution value can be obtained with a higher growth rate of the Nd123 phase under low PO2.

Growth and Characterization of PbTiO3 and Pb(Zr,Ti)O3 Thin Films by MOCVD

1994 ◽  
Vol 361 ◽  
Author(s):  
Y. Gao ◽  
W. Dong ◽  
B.A. Turtle
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Pzt Films ◽  
Uniform Composition

ABSTRACTFerroelectric PbTiO3 and Pb(Zr,Ti)O3 thin films with a perovskite structure were grown on MgO and Pt/Ti/SiO2/Si by MOCV.D. The microstructure and composition of the films were characterized by x-ray diffraction, SEM, and AES. Preferred orientation of either (111) or (100)/(001) was obtained on the Pt/Ti/SiO2/Si substrates at temperatures from 600 °C to 650 °C The preferred (111) orientation was attributed to the formation of the Pt3Ti phase in the Pt layer of the substrates, whereas the (100)/(001) orientations were inferred as the growth rate effect. AES depth profiling indicated a uniform composition through the thickness of the PZT films. However, SEM showed different topography and microstructure of the PZT films deposited in different oxygen partial pressure. Electrical properties of the PZT films appear varied as a function of the oxygen partial pressure in the reactor.

scholarly journals Effect of Oxygen Partial Pressure on Crystal Structure, Oxygen Vacancy, and Surface Morphology of Epitaxial SrTiO3 Thin Films Grown by Ion Beam Sputter Deposition

Oxygen ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 62-72
Author(s):  
Gasidit Panomsuwan ◽  
Nagahiro Saito
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Oxygen Vacancy ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Compressive Strain ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Epitaxial SrTiO3 (STO) thin films were grown on (001)-oriented LaAlO3 (LAO) substrates at 800 °C by an ion beam sputter deposition (IBSD). Oxygen partial pressure (PO2) was varied at 1.5 × 10−5, 1.5 × 10−4, and 1.5 × 10−3 Torr during the growth. The effects of PO2 on crystal structure, oxygen vacancy, and surface morphology of the STO films were investigated and are discussed to understand their correlation. It was found that PO2 played a significant role in influencing the crystal structure, oxygen vacancy, and surface morphology of the STO films. All STO films grew on the LAO substrates under a compressive strain along an in-plane direction (a- and b-axes) and a tensile strain along the growth direction (c-axis). The crystalline quality of STO films was slightly improved at higher PO2. Oxygen vacancy was favorably created in the STO lattice grown at low PO2 due to a lack of oxygen during growth and became suppressed at high PO2. The existence of oxygen vacancy could result in a lattice expansion in both out-of-plane and in-plane directions due to the presence of Ti3+ instead of Ti4+ ions. The surface roughness of the STO films gradually decreased and was nearly close to that of the bare LAO substrate at high PO2, indicating a two-dimensional (2D) growth mode. The results presented in this work provide a correlation among crystal structure, oxygen vacancy, and surface morphology of the epitaxial STO films grown by IBSD, which form a useful guideline for further study.

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