Preparation of YBa2Cu4O8 Thin Films by MOCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
H. Sakai ◽  
H. Hayashi ◽  
K. Uehara ◽  
N. Kubota ◽  
T. Sugimoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Grain Growth ◽  
Single Phase ◽  
Film Surface ◽  
Surface Step ◽  
Composition Ratio ◽  
Sem And Tem

ABSTRACTPreparation processing to obtain 124 single phase films has been studied by MOCVD. The YBCO thin films which were fabricated on MgO(100) and SrTiO3(100) substrates, respectively, were obtained under both conditions of Ts(temperature of susceptor)=800°C and Po2(oxygen partial pressure)=17.5torr. It was found that the oriented peaks of 124 c-axis and of 123 a-axis were more prominent than others at the composition ratio(Y/Ba/Cu=l.0/2.7/4.7), using the MgO(100) substrates. The 123 a-axis oriented grain was observed by using SEM and TEM. We have obtained thin films which were dominant in the 124 phase on the SrTiO3(100) substrates. The film surface morphology on the SrTiO3(100) substrate was smoother than that on the MgO(100) substrate. The origin of a-axis oriented grain growth was explained by the surface step(about 10 À) on MgO(100).

Role of oxygen partial pressure and seed layer chemistry in flux mediated epitaxy of single phase multiferroic BiFeO3 thin films

2008 ◽  
Vol 93 (19) ◽  
pp. 192906 ◽  
Author(s):  
Varatharajan Anbusathaiah ◽  
Ching Jung Cheng ◽  
Sung Hwan Lim ◽  
Makoto Murakami ◽  
Lourdes G. Salamanca-Riba ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Seed Layer ◽  
Single Phase ◽  
Bifeo3 Thin Films ◽  
Multiferroic Bifeo3

Preparation of Pure Anatase TiO2 Thin Films by DC Sputtering Technique: Study on the Effect of Oxygen Partial Pressure

2012 ◽  
Vol 463-464 ◽  
pp. 1415-1419 ◽  
Author(s):  
P. Pungboon Pansila ◽  
Nirun Witit-Anun ◽  
Tongsai Jamnongkan ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power ◽  
Effect Of Oxygen ◽  
Titanium Dioxide Thin Films

Titanium dioxide thin films were deposited by DC reactive magnetron sputtering on silicon wafer and glass slide at sputtering power of 210 watt under total pressure of 5.0×10-3 mbar at different oxygen partial pressure. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The crystal structure and surface morphology were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmission was measured by spectrophotometer. The results show that the crystalline was pure anatase structure titanium dioxide thin films. The surface morphology of the films is strongly the oxygen partial pressure. It was found that surface roughness of the thin films was around 2.42 to 4.82 nm and the thickness was around 72 to130 nm. In addition, it was found that all the titanium dioxide thin films were deposited by reactive sputtering with the different oxygen pressure exhibit the transparency property.

Growth and characterization of Titanium Niobium Oxide (TiNb2O7) thin films

2015 ◽  
Vol 1805 ◽  
Author(s):  
Venkateswarlu Daramalla ◽  
S.B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Laser Fluence ◽  
Photoelectron Spectroscopy ◽  
Binding Energies ◽  
Experimental Conditions ◽  
Monoclinic Crystal

ABSTRACTComprehensive studies were done on the growth and characterization of TiNb2O7 (TNO) complex oxide thin films by pulsed laser deposition for the first time. The TNO thin films were successfully grown on Pt(200)/TiO2/SiO2/Si(100) substrates. The structure, surface morphology and chemical properties of as-grown thin films were studied as function of deposition temperature, pressure and laser fluence. The GIXRD and HRTEM analyses revealed that the as-grown TNO films were in the monoclinic crystal structure and independent of laser fluence. The HAADF STEM elemental mapping confirms the uniform composition of Ti, Nb and O in TNO thin films. The atomic force microscopy and field emission scanning microscopy shows that, the surface morphology and microstructure of TNO films varied significantly with respect to experimental conditions. The X-ray photoelectron spectroscopy quantitative results indicated that the binding energies of Ti and Nb elements shifted towards right with increasing oxygen partial pressure. The effects of oxygen partial pressure and laser fluence on as-grown TNO films were studied.

scholarly journals Effect of Oxygen Partial Pressure on Crystal Structure, Oxygen Vacancy, and Surface Morphology of Epitaxial SrTiO3 Thin Films Grown by Ion Beam Sputter Deposition

Oxygen ◽  
2021 ◽  
Vol 1 (1) ◽  
pp. 62-72
Author(s):  
Gasidit Panomsuwan ◽  
Nagahiro Saito
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Oxygen Vacancy ◽  
Surface Morphology ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Ion Beam ◽  
Compressive Strain ◽  
Sputter Deposition ◽  
Ion Beam Sputter Deposition

Epitaxial SrTiO3 (STO) thin films were grown on (001)-oriented LaAlO3 (LAO) substrates at 800 °C by an ion beam sputter deposition (IBSD). Oxygen partial pressure (PO2) was varied at 1.5 × 10−5, 1.5 × 10−4, and 1.5 × 10−3 Torr during the growth. The effects of PO2 on crystal structure, oxygen vacancy, and surface morphology of the STO films were investigated and are discussed to understand their correlation. It was found that PO2 played a significant role in influencing the crystal structure, oxygen vacancy, and surface morphology of the STO films. All STO films grew on the LAO substrates under a compressive strain along an in-plane direction (a- and b-axes) and a tensile strain along the growth direction (c-axis). The crystalline quality of STO films was slightly improved at higher PO2. Oxygen vacancy was favorably created in the STO lattice grown at low PO2 due to a lack of oxygen during growth and became suppressed at high PO2. The existence of oxygen vacancy could result in a lattice expansion in both out-of-plane and in-plane directions due to the presence of Ti3+ instead of Ti4+ ions. The surface roughness of the STO films gradually decreased and was nearly close to that of the bare LAO substrate at high PO2, indicating a two-dimensional (2D) growth mode. The results presented in this work provide a correlation among crystal structure, oxygen vacancy, and surface morphology of the epitaxial STO films grown by IBSD, which form a useful guideline for further study.

Influence of Momentary Annealing on the Nanoscale Surface Morphology of Room Temperature Pulsed Laser Deposited NiO(111) Epitaxial Thin Films on Atomically Stepped Sapphire (0001) Substrates

2013 ◽  
Vol 1507 ◽  
Author(s):  
Ryosuke Yamauchi ◽  
Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Film Surface ◽  
Transient State ◽  
Epitaxial Thin Films ◽  
Flat Surfaces ◽  
Surface Nanostructure ◽  
Atomically Flat

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.

Highly conductive AZO thin films obtained by rationally optimizing substrate temperature and oxygen partial pressure

2017 ◽  
Vol 644 (1) ◽  
pp. 190-196 ◽  
Author(s):  
Yong Zeng ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
Feng Zhu ◽  
Xianzhe Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Oxygen Partial Pressure ◽  
Partial Pressure
Sign in / Sign up

Export Citation Format

Share Document