Flexible Thermoelectric Devices Based on Indium Phosphide Nanowire Networks on Copper

2014 ◽  
Vol 1682 ◽  
Author(s):  
Kate J. Norris ◽  
Brian Tuan ◽  
Elane Coleman ◽  
David M. Fryauf ◽  
Junce Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Indium Phosphide ◽  
Metallic Substrate ◽  
Total Power ◽  
Semiconductor Nanowire ◽  
Nanowire Network ◽  
Multiple Materials ◽  
Nanowire Networks ◽  
Si Thin Film

ABSTRACTMore than 50% of total input energy is wasted as heat in various industrial processes. If we could harness a small fraction of the waste heat while satisfying the economic demands of cost versus performance, then thermoelectric (TE) power generation could bring substantial positive impacts. To meet these demands single-crystal semiconductor nanowire networks have been investigated as a method to achieve advanced TE devices because of their predicted large reduction in thermal conductivity and increase in power factor.To further our goal of developing practical and economical TE devices, we designed and developed a material platform that combined a semiconductor nanowire network and a semiconductor thin film integrated directly on a mechanically flexible metallic substrate. We assessed the potential of this platform by using indium phosphide (InP) nanowire networks and a doped poly-silicon (poly-Si) thin film combined on copper sheets. InP nanowires were grown by metal organic chemical vapor deposition (MOCVD). In the nanowire network, InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. Subsequently, plasma-assisted CVD was utilized to form a poly-Si thin film to prevent electrical shorting when an ohmic copper top contact was made. An additional facet to this design is the utilization of multiple materials to address the various temperature ranges at which each material is most efficient at heat-to-energy conversion. The utilization of multiple materials could enable the enhancement of total power generation for a given temperature gradient. We investigated the use of poly-Si thin films combined with InP nanowires to enhance TE properties. TE power production and challenges of a large area nanowire device on a flexible metallic substrate were presented.

Surface Photovoltage Study of Indium Phosphide Nanowire Networks

2011 ◽  
Vol 1350 ◽  
Author(s):  
Andrew J. Lohn ◽  
Jin-Woo Han ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Thin Film ◽  
Indium Phosphide ◽  
Numerical Solutions ◽  
Three Dimensional ◽  
Transport Equations ◽  
Surface Photovoltage ◽  
Nanowire Network ◽  
Nanowire Networks

ABSTRACTSurface photovoltage of three-dimensional networks composed of fused indium phosphide (InP) nanowires is discussed. Particular emphasis is given to the dependence of surface photovoltage on the chopping frequency of light that excites the nanowire network as observed in regions which are laterally separated from the excitation. The nanowire network is modeled as a thin film to simplify numerical solutions to transport equations which aids in the interpretation of diffusion and drift of photo-generated carriers within the nanowire network.

Nonlinearity Found in Thermoelectric Devices Made of Heterogeneous Semiconductor Nanowire Networks

2015 ◽  
Vol 1785 ◽  
pp. 27-33
Author(s):  
Kate J. Norris ◽  
Matthew P. Garrett ◽  
Junce Zhang ◽  
Elane Coleman ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Power Generation ◽  
Structural Integrity ◽  
Electrical Power ◽  
Copper Substrate ◽  
Thermoelectric Devices ◽  
Semiconductor Nanowire ◽  
Linear Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nanowire Networks

ABSTRACTWe present a concept to increase efficiencies utilizing nonlinear elements integrated with our semiconductor nanowire networks. Demonstrated here is power generation with thermoelectric devices made of two nanowire networks, one silicon and one indium phosphide, grown on a mechanically flexible copper substrate. Electron microscopy was utilized to characterize structural integrity of the nanowire networks. Non-linear current-voltage characteristics were observed, which suggests a new platform to increase maximum electrical power generation for a given temperature gradient.

Fabrication of silicon nanowire network in aluminum thin films

2005 ◽  
Vol 862 ◽  
Author(s):  
Vincent H. Liu ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Thin Film ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Vertical Direction ◽  
X Ray ◽  
Nanowire Network ◽  
Aluminum Thin Film ◽  
Nanowire Networks ◽  
Scanning Electron

AbstractThe formation of isolated silicon nanowires and silicon nanowire networks using aluminum thin film is investigated. The formation mechanism of the network mainly depends on the diffusion of silicon in the aluminum thin film. The silicon stops at the film grain boundaries. The continuous accumulations of silicon at these boundaries give raise to a continuous network of silicon nanowires. Characterization of the nanowires has been done using scanning electron microscopy and energy dispersive x-ray spectroscopy. These results are unique in the fact that the nanowires found are grown in a horizontal fashion instead of the more common vertical direction. Most of the nanowires have a diameter of about 60 nm and a length of over 10 μm.

Self-Charging Structures Using Piezoceramics and Thin-Film Batteries

2009 ◽  
Author(s):  
Steven R. Anton ◽  
Alper Erturk ◽  
Na Kong ◽  
Dong S. Ha ◽  
Daniel J. Inman
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Metallic Substrate ◽  
The Self ◽  
Load Bearing ◽  
Thin Film Battery ◽  
Battery Technology ◽  
Novel Concept ◽  
Energy Harvesting Devices ◽  
Static Failure

This paper presents the investigation of a novel concept involving the combination of piezoelectrics and new thin-film battery technology to form multifunctional self-charging, load-bearing energy harvesting devices. The proposed self-charging structures contain both power generation and energy storage capabilities in a multilayered, composite platform consisting of active piezoceramic layers for scavenging energy, thin-film battery layers for storing scavenged energy, and a central metallic substrate layer. Several aspects of the design, modeling, fabrication, and evaluation of the self-charging structures are reviewed. A focus is placed on the evaluation of the load-bearing capabilities of the fabricated self-charging structures through both classical static failure testing as well as dynamic vibration failure testing.

scholarly journals Hydrophobic and stretchable Ag nanowire network electrode passivated by a sputtered PTFE layer for self-cleaning transparent thin film heaters

RSC Advances ◽  
2018 ◽  
Vol 8 (33) ◽  
pp. 18508-18518 ◽  
Author(s):  
Sang-Mok Lee ◽  
Sung Hyun Kim ◽  
Jae Heung Lee ◽  
Sang-Jin Lee ◽  
Han-Ki Kim
Keyword(s):  
Thin Film ◽  
Transparent Film ◽  
Transparent Electrodes ◽  
Nanowire Network ◽  
Self Cleaning ◽  
Nanowire Networks ◽  
Ag Nanowire

We demonstrated hydrophobic, flexible/stretchable, and transparent electrodes made up of Ag nanowire networks passivated by a sputtered polytetrafluoroethylene layer to produce self-cleaning transparent film heaters.

Developing a Wearable Multifunctional Composite Component

2013 ◽  
Vol 683 ◽  
pp. 116-119
Author(s):  
Noaman Makki ◽  
Remon Pop-Iliev
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Lithium Battery ◽  
Low Cost ◽  
Total Power ◽  
Composite Component ◽  
Polyvinylidene Difluoride ◽  
Structural Support ◽  
Power Storage ◽  
Total Power Output

This paper focuses on the design and development of a low-cost multifunctional composite component integrated into a shoe hill that generates power in the order of milliwats (mW) through piezoceramic (PZT) stacks and stores this harvested energy in a capacitor integrated into the composite. The use of a thin-film lithium battery integrated into the composite is also explored as a means of permanent power storage. PZT bimorph elements are stacked in a cantilever manner. The space in-between and around the elements is being filled with foam, which provides structural support as well as walking comfort. An insole composite with a PZT layer is also developed that is capable of producing 2.2mW of power to give a total power output of 12.2mW for the in-heel insole combination. The experimental results revealed that the use of PZT bimorph elements (d33=110) instead of polyvinylidene difluoride PVDF sheets (d33=20) increased the power generation potential over five folds, which is further compounded by stacking the PZT elements.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

2003 ◽  
Vol 16 (3-4) ◽  
pp. 400-403
Author(s):  
Do Young Kim ◽  
Ji Sim Jung ◽  
Young Rae Jang ◽  
Kun Ho Yoo ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Si Thin Film

scholarly journals Giant Magnetoresistance and Magneto-Thermopower in 3D Interconnected NixFe1−x/Cu Multilayered Nanowire Networks

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1133
Author(s):  
Nicolas Marchal ◽  
Tristan da Câmara Santa Clara Gomes ◽  
Flavio Abreu Araujo ◽  
Luc Piraux
Keyword(s):  
Giant Magnetoresistance ◽  
Nanowire Array ◽  
Three Dimensional ◽  
Strong Increase ◽  
Thermoelectric Effect ◽  
Heat Management ◽  
Thermoelectric Effects ◽  
Nanowire Network ◽  
Potential Applications ◽  
Nanowire Networks

The versatility of the template-assisted electrodeposition technique to fabricate complex three-dimensional networks made of interconnected nanowires allows one to easily stack ferromagnetic and non-magnetic metallic layers along the nanowire axis. This leads to the fabrication of unique multilayered nanowire network films showing giant magnetoresistance effect in the current-perpendicular-to-plane configuration that can be reliably measured along the macroscopic in-plane direction of the films. Moreover, the system also enables reliable measurements of the analogous magneto-thermoelectric properties of the multilayered nanowire networks. Here, three-dimensional interconnected NixFe1−x/Cu multilayered nanowire networks (with 0.60≤x≤0.97) are fabricated and characterized, leading to large magnetoresistance and magneto-thermopower ratios up to 17% and −25% in Ni80Fe20/Cu, respectively. A strong contrast is observed between the amplitudes of magnetoresistance and magneto-thermoelectric effects depending on the Ni content of the NiFe alloys. In particular, for the highest Ni concentrations, a strong increase in the magneto-thermoelectric effect is observed, more than a factor of 7 larger than the magnetoresistive effect for Ni97Fe3/Cu multilayers. This sharp increase is mainly due to an increase in the spin-dependent Seebeck coefficient from −7 µV/K for the Ni60Fe40/Cu and Ni70Fe30/Cu nanowire arrays to −21 µV/K for the Ni97Fe3/Cu nanowire array. The enhancement of the magneto-thermoelectric effect for multilayered nanowire networks based on dilute Ni alloys is promising for obtaining a flexible magnetic switch for thermoelectric generation for potential applications in heat management or logic devices using thermal energy.

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