scholarly journals Hydrophobic and stretchable Ag nanowire network electrode passivated by a sputtered PTFE layer for self-cleaning transparent thin film heaters

RSC Advances ◽  
2018 ◽  
Vol 8 (33) ◽  
pp. 18508-18518 ◽  
Author(s):  
Sang-Mok Lee ◽  
Sung Hyun Kim ◽  
Jae Heung Lee ◽  
Sang-Jin Lee ◽  
Han-Ki Kim
Keyword(s):  
Thin Film ◽  
Transparent Film ◽  
Transparent Electrodes ◽  
Nanowire Network ◽  
Self Cleaning ◽  
Nanowire Networks ◽  
Ag Nanowire

We demonstrated hydrophobic, flexible/stretchable, and transparent electrodes made up of Ag nanowire networks passivated by a sputtered polytetrafluoroethylene layer to produce self-cleaning transparent film heaters.

Flexible Thermoelectric Devices Based on Indium Phosphide Nanowire Networks on Copper

2014 ◽  
Vol 1682 ◽  
Author(s):  
Kate J. Norris ◽  
Brian Tuan ◽  
Elane Coleman ◽  
David M. Fryauf ◽  
Junce Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Indium Phosphide ◽  
Metallic Substrate ◽  
Total Power ◽  
Semiconductor Nanowire ◽  
Nanowire Network ◽  
Multiple Materials ◽  
Nanowire Networks ◽  
Si Thin Film

ABSTRACTMore than 50% of total input energy is wasted as heat in various industrial processes. If we could harness a small fraction of the waste heat while satisfying the economic demands of cost versus performance, then thermoelectric (TE) power generation could bring substantial positive impacts. To meet these demands single-crystal semiconductor nanowire networks have been investigated as a method to achieve advanced TE devices because of their predicted large reduction in thermal conductivity and increase in power factor.To further our goal of developing practical and economical TE devices, we designed and developed a material platform that combined a semiconductor nanowire network and a semiconductor thin film integrated directly on a mechanically flexible metallic substrate. We assessed the potential of this platform by using indium phosphide (InP) nanowire networks and a doped poly-silicon (poly-Si) thin film combined on copper sheets. InP nanowires were grown by metal organic chemical vapor deposition (MOCVD). In the nanowire network, InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. Subsequently, plasma-assisted CVD was utilized to form a poly-Si thin film to prevent electrical shorting when an ohmic copper top contact was made. An additional facet to this design is the utilization of multiple materials to address the various temperature ranges at which each material is most efficient at heat-to-energy conversion. The utilization of multiple materials could enable the enhancement of total power generation for a given temperature gradient. We investigated the use of poly-Si thin films combined with InP nanowires to enhance TE properties. TE power production and challenges of a large area nanowire device on a flexible metallic substrate were presented.

TiO2-Coated Core–Shell Ag Nanowire Networks for Robust and Washable Flexible Transparent Electrodes

2019 ◽  
Vol 2 (4) ◽  
pp. 2456-2466 ◽  
Author(s):  
Yilong Huang ◽  
Yanhong Tian ◽  
Chunjin Hang ◽  
Yubin Liu ◽  
Shang Wang ◽  
...  
Keyword(s):  
Core Shell ◽  
Transparent Electrodes ◽  
Nanowire Networks ◽  
Ag Nanowire ◽  
Flexible Transparent Electrodes

Fabrication of silicon nanowire network in aluminum thin films

2005 ◽  
Vol 862 ◽  
Author(s):  
Vincent H. Liu ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Thin Film ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Vertical Direction ◽  
X Ray ◽  
Nanowire Network ◽  
Aluminum Thin Film ◽  
Nanowire Networks ◽  
Scanning Electron

AbstractThe formation of isolated silicon nanowires and silicon nanowire networks using aluminum thin film is investigated. The formation mechanism of the network mainly depends on the diffusion of silicon in the aluminum thin film. The silicon stops at the film grain boundaries. The continuous accumulations of silicon at these boundaries give raise to a continuous network of silicon nanowires. Characterization of the nanowires has been done using scanning electron microscopy and energy dispersive x-ray spectroscopy. These results are unique in the fact that the nanowires found are grown in a horizontal fashion instead of the more common vertical direction. Most of the nanowires have a diameter of about 60 nm and a length of over 10 μm.

Application of patterned Ag-nanowire networks to transparent thin-film heaters and electrodes for organic light-emitting diodes

2016 ◽  
Vol 55 (6S3) ◽  
pp. 06JB03 ◽  
Author(s):  
Seung-Rok Kim ◽  
Ross E. Triambulo ◽  
Jin-Hoon Kim ◽  
Jaeyoon Park ◽  
Unyong Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Nanowire Networks ◽  
Ag Nanowire

Surface Photovoltage Study of Indium Phosphide Nanowire Networks

2011 ◽  
Vol 1350 ◽  
Author(s):  
Andrew J. Lohn ◽  
Jin-Woo Han ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Thin Film ◽  
Indium Phosphide ◽  
Numerical Solutions ◽  
Three Dimensional ◽  
Transport Equations ◽  
Surface Photovoltage ◽  
Nanowire Network ◽  
Nanowire Networks

ABSTRACTSurface photovoltage of three-dimensional networks composed of fused indium phosphide (InP) nanowires is discussed. Particular emphasis is given to the dependence of surface photovoltage on the chopping frequency of light that excites the nanowire network as observed in regions which are laterally separated from the excitation. The nanowire network is modeled as a thin film to simplify numerical solutions to transport equations which aids in the interpretation of diffusion and drift of photo-generated carriers within the nanowire network.

Floating compression of Ag nanowire networks for effective strain release of stretchable transparent electrodes

Nanoscale ◽  
2015 ◽  
Vol 7 (39) ◽  
pp. 16434-16441 ◽  
Author(s):  
Jun Beom Pyo ◽  
Byoung Soo Kim ◽  
Hyunchul Park ◽  
Tae Ann Kim ◽  
Chong Min Koo ◽  
...  
Keyword(s):  
Effective Strain ◽  
Silver Nanowire ◽  
Transparent Electrodes ◽  
Strain Release ◽  
Nanowire Networks ◽  
Ag Nanowire

Silver nanowire networks with wavy configurations prepared by floating compression offer key benefits in application of stretchable transparent electrodes.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

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