Surface Photovoltage Study of Indium Phosphide Nanowire Networks

2011 ◽  
Vol 1350 ◽  
Author(s):  
Andrew J. Lohn ◽  
Jin-Woo Han ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Thin Film ◽  
Indium Phosphide ◽  
Numerical Solutions ◽  
Three Dimensional ◽  
Transport Equations ◽  
Surface Photovoltage ◽  
Nanowire Network ◽  
Nanowire Networks

ABSTRACTSurface photovoltage of three-dimensional networks composed of fused indium phosphide (InP) nanowires is discussed. Particular emphasis is given to the dependence of surface photovoltage on the chopping frequency of light that excites the nanowire network as observed in regions which are laterally separated from the excitation. The nanowire network is modeled as a thin film to simplify numerical solutions to transport equations which aids in the interpretation of diffusion and drift of photo-generated carriers within the nanowire network.

Flexible Thermoelectric Devices Based on Indium Phosphide Nanowire Networks on Copper

2014 ◽  
Vol 1682 ◽  
Author(s):  
Kate J. Norris ◽  
Brian Tuan ◽  
Elane Coleman ◽  
David M. Fryauf ◽  
Junce Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Power Generation ◽  
Indium Phosphide ◽  
Metallic Substrate ◽  
Total Power ◽  
Semiconductor Nanowire ◽  
Nanowire Network ◽  
Multiple Materials ◽  
Nanowire Networks ◽  
Si Thin Film

ABSTRACTMore than 50% of total input energy is wasted as heat in various industrial processes. If we could harness a small fraction of the waste heat while satisfying the economic demands of cost versus performance, then thermoelectric (TE) power generation could bring substantial positive impacts. To meet these demands single-crystal semiconductor nanowire networks have been investigated as a method to achieve advanced TE devices because of their predicted large reduction in thermal conductivity and increase in power factor.To further our goal of developing practical and economical TE devices, we designed and developed a material platform that combined a semiconductor nanowire network and a semiconductor thin film integrated directly on a mechanically flexible metallic substrate. We assessed the potential of this platform by using indium phosphide (InP) nanowire networks and a doped poly-silicon (poly-Si) thin film combined on copper sheets. InP nanowires were grown by metal organic chemical vapor deposition (MOCVD). In the nanowire network, InP nanowires were grown in three-dimensional networks in which electrical charges and heat travel under the influence of their characteristic scattering mechanisms over a distance much longer than the mean length of the constituent nanowires. Subsequently, plasma-assisted CVD was utilized to form a poly-Si thin film to prevent electrical shorting when an ohmic copper top contact was made. An additional facet to this design is the utilization of multiple materials to address the various temperature ranges at which each material is most efficient at heat-to-energy conversion. The utilization of multiple materials could enable the enhancement of total power generation for a given temperature gradient. We investigated the use of poly-Si thin films combined with InP nanowires to enhance TE properties. TE power production and challenges of a large area nanowire device on a flexible metallic substrate were presented.

scholarly journals Giant Magnetoresistance and Magneto-Thermopower in 3D Interconnected NixFe1−x/Cu Multilayered Nanowire Networks

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1133
Author(s):  
Nicolas Marchal ◽  
Tristan da Câmara Santa Clara Gomes ◽  
Flavio Abreu Araujo ◽  
Luc Piraux
Keyword(s):  
Giant Magnetoresistance ◽  
Nanowire Array ◽  
Three Dimensional ◽  
Strong Increase ◽  
Thermoelectric Effect ◽  
Heat Management ◽  
Thermoelectric Effects ◽  
Nanowire Network ◽  
Potential Applications ◽  
Nanowire Networks

The versatility of the template-assisted electrodeposition technique to fabricate complex three-dimensional networks made of interconnected nanowires allows one to easily stack ferromagnetic and non-magnetic metallic layers along the nanowire axis. This leads to the fabrication of unique multilayered nanowire network films showing giant magnetoresistance effect in the current-perpendicular-to-plane configuration that can be reliably measured along the macroscopic in-plane direction of the films. Moreover, the system also enables reliable measurements of the analogous magneto-thermoelectric properties of the multilayered nanowire networks. Here, three-dimensional interconnected NixFe1−x/Cu multilayered nanowire networks (with 0.60≤x≤0.97) are fabricated and characterized, leading to large magnetoresistance and magneto-thermopower ratios up to 17% and −25% in Ni80Fe20/Cu, respectively. A strong contrast is observed between the amplitudes of magnetoresistance and magneto-thermoelectric effects depending on the Ni content of the NiFe alloys. In particular, for the highest Ni concentrations, a strong increase in the magneto-thermoelectric effect is observed, more than a factor of 7 larger than the magnetoresistive effect for Ni97Fe3/Cu multilayers. This sharp increase is mainly due to an increase in the spin-dependent Seebeck coefficient from −7 µV/K for the Ni60Fe40/Cu and Ni70Fe30/Cu nanowire arrays to −21 µV/K for the Ni97Fe3/Cu nanowire array. The enhancement of the magneto-thermoelectric effect for multilayered nanowire networks based on dilute Ni alloys is promising for obtaining a flexible magnetic switch for thermoelectric generation for potential applications in heat management or logic devices using thermal energy.

Fabrication of silicon nanowire network in aluminum thin films

2005 ◽  
Vol 862 ◽  
Author(s):  
Vincent H. Liu ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown
Keyword(s):  
Thin Film ◽  
Silicon Nanowires ◽  
Silicon Nanowire ◽  
Vertical Direction ◽  
X Ray ◽  
Nanowire Network ◽  
Aluminum Thin Film ◽  
Nanowire Networks ◽  
Scanning Electron

AbstractThe formation of isolated silicon nanowires and silicon nanowire networks using aluminum thin film is investigated. The formation mechanism of the network mainly depends on the diffusion of silicon in the aluminum thin film. The silicon stops at the film grain boundaries. The continuous accumulations of silicon at these boundaries give raise to a continuous network of silicon nanowires. Characterization of the nanowires has been done using scanning electron microscopy and energy dispersive x-ray spectroscopy. These results are unique in the fact that the nanowires found are grown in a horizontal fashion instead of the more common vertical direction. Most of the nanowires have a diameter of about 60 nm and a length of over 10 μm.

scholarly journals ZnO Nanowire Networks as Photoanode Model Systems for Photoelectrochemical Applications

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 693 ◽  
Author(s):  
Liana Movsesyan ◽  
Albert Maijenburg ◽  
Noel Goethals ◽  
Wilfried Sigle ◽  
Anne Spende ◽  
...  
Keyword(s):  
Anatase Phase ◽  
Three Dimensional ◽  
Atomic Layer ◽  
Model Systems ◽  
Zno Nanowire ◽  
Chemical Corrosion ◽  
Tio2 Nanowire ◽  
Nanowire Network ◽  
Nanowire Networks ◽  
3D Networks

In this work, the fabrication of zinc oxide (ZnO) nanowire networks is presented. By combining ion-track technology, electrochemical deposition, and atomic layer deposition, hierarchical and self-supporting three-dimensional (3D) networks of pure ZnO- and TiO2-coated ZnO nanowires were synthesized. Analysis by means of high-resolution transmission electron microscopy revealed a highly crystalline structure of the electrodeposited ZnO wires and the anatase phase of the TiO2 coating. In photoelectrochemical measurements, the ZnO and ZnO/TiO2 nanowire networks, used as anodes, generated higher photocurrents compared to those produced by their film counterparts. The ZnO/TiO2 nanowire network exhibited the highest photocurrents. However, the protection by the TiO2 coatings against chemical corrosion still needs improvement. The one-dimensionality of the nanowires and the large electrolyte-accessible area make these 3D networks promising photoelectrodes, due to the improved transport properties of photogenerated charge carriers and faster redox reactions at the surface. Moreover, they can find further applications in e.g., sensing, catalytical, and piezoelectric devices.

AC surface photovoltage of indium phosphide nanowire networks

2012 ◽  
Vol 107 (3) ◽  
pp. 647-651 ◽  
Author(s):  
Andrew J. Lohn ◽  
Nobuhiko P. Kobayashi
Keyword(s):  
Indium Phosphide ◽  
Surface Photovoltage ◽  
Nanowire Networks

scholarly journals Microstructure and Fluctuation-Induced Conductivity Analysis of Bi2Sr2CaCu2O8+δ (Bi-2212) Nanowire Fabrics

Crystals ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 986
Author(s):  
Michael Rudolf Koblischka ◽  
Anjela Koblischka-Veneva ◽  
XianLin Zeng ◽  
Essia Hannachi ◽  
Yassine Slimani
Keyword(s):  
Three Dimensional ◽  
Short Wave ◽  
Superconducting Transition ◽  
Fiber Mats ◽  
Nanowire Network ◽  
Fluctuation Induced Conductivity ◽  
The Individual ◽  
Nanofiber Mats ◽  
Nanowire Networks ◽  
First Time

Resistance measurements were performed on Bi2Sr2CaCu2O8+δ (Bi-2212) fabric-like nanowire networks or nanofiber mats in the temperature interval 3 K ≤T≤ 300 K. The nanowire fabrics were prepared by means of electrospinning, and consist of long (up to 100 μm) individual nanowires with a mean diameter of 250 nm. The microstructure of the nanowire network fiber mats and of the individual nanowires was thoroughly characterized by electron microscopy showing that the nanowires can be as thin as a single Bi-2212 grain. The polycrystalline nanowires are found to have a texture in the direction of the original polymer nanowire. The overall structure of the nanofiber mats is characterized by numerous interconnects among the nanowires, which enable current flow across the whole sample. The fluctuation-induced conductivity (excess conductivity) above the superconducting transition temperature, Tc, was analyzed using the Aslamzov-Larkin model. Four distinct fluctuation regimes (short-wave, two-dimensional, three-dimensional and critical fluctuation regimes) could be identified in the Bi-2212 nanowire fabric samples. These regimes in such nanowire network samples are discussed in detail for the first time. Based on this analysis, we determine several superconducting parameters from the resistance data.

scholarly journals Hydrophobic and stretchable Ag nanowire network electrode passivated by a sputtered PTFE layer for self-cleaning transparent thin film heaters

RSC Advances ◽  
2018 ◽  
Vol 8 (33) ◽  
pp. 18508-18518 ◽  
Author(s):  
Sang-Mok Lee ◽  
Sung Hyun Kim ◽  
Jae Heung Lee ◽  
Sang-Jin Lee ◽  
Han-Ki Kim
Keyword(s):  
Thin Film ◽  
Transparent Film ◽  
Transparent Electrodes ◽  
Nanowire Network ◽  
Self Cleaning ◽  
Nanowire Networks ◽  
Ag Nanowire

We demonstrated hydrophobic, flexible/stretchable, and transparent electrodes made up of Ag nanowire networks passivated by a sputtered polytetrafluoroethylene layer to produce self-cleaning transparent film heaters.

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