Temperature study of CVD graphene on Cu thin films: competition between C catalysis and Cu dewetting

2014 ◽  
Vol 1658 ◽  
Author(s):  
G. Amato ◽  
L. Croin ◽  
G. Milano ◽  
E. Vittone
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Optimal Conditions ◽  
Red Emission ◽  
Thermal Chemical Vapor Deposition ◽  
Infra Red ◽  
Cu Thin Film

ABSTRACTIn this paper we report on a systematic study of Cu thin film dewetting by the monitoring of the intensity of the infra-red emission from the film surface during Rapid Thermal Chemical Vapor Deposition of graphene. The time evolution of Cu coverage highlights three typical stages of dewetting which strongly depend not only on the temperature and film thickness, but also on the pressure and composition of the gas in chamber. Consequently, we demonstrate that the Cu surface can be effectively activated in films at temperatures lower than in foils and the process can be fully controlled by adjusting those parameters, in order to reach the optimal conditions for graphene growth.

Raman and Electrical Analysis of Iodine-Doped Amorphous Carbon Thin Films

2013 ◽  
Vol 667 ◽  
pp. 281-286
Author(s):  
A.N. Fadzilah ◽  
K. Dayana ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Amorphous Structure ◽  
Solar Simulator ◽  
Thermal Chemical Vapor Deposition ◽  
Electrical Analysis

Iodine doped amorphous carbon (a-C: I) thin films were prepared by using Thermal Chemical Vapor Deposition (CVD) with deposition temperature ranging from 5000C to 7000C. The physical and electrical properties of deposited a-C:I thin films were characterized by Raman spectroscope and Solar Simulator system. The presence of 2 peaks known as Raman D peaks and Raman G peaks ensure the amorphous structure of carbon (C). As deposition temperature increase, the ID/IG ratio shows difference value, which indicates the effects of the temperature towards the a-C: I structures. An ohmic graph was obtained for the IV measurement, and the conductivity varies from 10-4 to 101 Scm-1. The photoresponse was also determined for all samples. As a reference, an undoped a-C thin film was prepared to differentiate the characteristic between a-C and a-C: I.

scholarly journals Synthesis of diamond thin films by atmospheric-pressure thermal chemical vapor deposition and their characterization.

Shinku ◽  
1987 ◽  
Vol 30 (2) ◽  
pp. 60-68
Author(s):  
Yoichi HIROSE ◽  
Yuki TERASAWA ◽  
Kazuya IWASAKI ◽  
Katumi TAKAHASHI ◽  
Kazuo TEZUKA
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Diamond Thin Films

Preparation of Lithium Niobate Thin Film by Thermal Chemical Vapor Deposition

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5227-5232 ◽  
Author(s):  
Y. S. Shin ◽  
M. Yoshida ◽  
Y. Akiyama ◽  
N. Imaishi ◽  
S. C. Jung
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Lithium Niobate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Large field emission from carbon nanotubes grown on patterned catalyst thin film by thermal chemical vapor deposition

2002 ◽  
Vol 323 (1-4) ◽  
pp. 171-173 ◽  
Author(s):  
Takashi Ikuno ◽  
Tetsuro Yamamoto ◽  
Motoki Kamizono ◽  
Syunji Takahashi ◽  
Hiroshi Furuta ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Large Field ◽  
Thermal Chemical Vapor Deposition

Surface physical property of the CrO2 thin films prepared using a closed chemical vapor deposition method

2012 ◽  
Vol 1406 ◽  
Author(s):  
Y. Muraoka ◽  
S. Yoshida ◽  
T. Wakita ◽  
M. Hirai ◽  
T. Yokoya
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Physical Property ◽  
Physical Nature ◽  
Photoemission Spectroscopy ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method

ABSTRACTWe have examined the intrinsic surface physical property of a CrO2 thin film by means of surface sensitive photoemission spectroscopy. Epitaxial thin film of CrO2(100) has been grown on TiO2(100) by a closed chemical vapor deposition method using a Cr8O21 precursor. Low-energy electron diffraction (LEED) observations find that epitaxial growth of rutile-phase CrO2 occurs to the top monolayer of the film. Surface sensitive x-ray photoemission spectroscopy (XPS) measurements show a finite intensity in the region of the Fermi energy. The result evidences that the physical nature of near topmost layer of CrO2 thin film is metallic. Progress of understanding of the surface physical property of CrO2 thin film helps not only perform a reliable photoemission study to understand the physics of ferromagnetic metal in CrO2, but also develop the CrO2-based devices using a half-metallic nature for spintronics applications.

Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb)2

2012 ◽  
Vol 89 ◽  
pp. 109-115 ◽  
Author(s):  
Jong Mun Choi ◽  
Dohan Lee ◽  
Ji Hun Park ◽  
Chang Gyoun Kim ◽  
Taek-Mo Chung ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Atmosphere ◽  
Thin Film Growth ◽  
Cu Thin Film

Humidity Sensor Using CVD Deposited SnO2 Thin Film

2013 ◽  
Vol 667 ◽  
pp. 415-420
Author(s):  
A.K.S. Shafura ◽  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
S. Ahmad ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Humidity Sensor ◽  
Chemical Vapor ◽  
Sno2 Thin Film ◽  
Optical And Electrical Properties ◽  
Fesem Image ◽  
Thermal Chemical Vapor Deposition

In this paper we address sensitivity of SnO2 thin film deposited by thermal chemical vapor deposition in terms of its behavior towards humidity variations. The structural, optical and electrical properties of SnO2 thin film deposit at different substrate temperature grown by thermal chemical vapor deposition (CVD) are also reviewed. FESEM image reveal smallest particle size of SnO2 at substrate temperature 500°C. Pl measurement shows red shift of SnO2 at substrate temperature 500°C. All thin film performing slightly linear sensitivities towards relative humidity (RH%).

Nucleation And Growth of Yttria-Stabilized Zirconia Thin Films Using Combustion Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Sergey Yarmolenko ◽  
Qiuming Wei
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Nucleation Rate ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Structural Evolution ◽  
Chemical Vapor ◽  
Total Metal ◽  
Vapor Deposition Technique

ABSTRACTLiquid fuel combustion chemical vapor deposition technique was successfully used for YSZ thin film processing. The nucleation rates were obtained for the samples processed at different temperatures and total-metal-concentrations in the liquid fuel. An optimum substrate temperature was found for the highest nucleation rate. The nucleation rate was increased with the total-metal-concentration. Structural evolution of the thin film in the early processing stage was studied with regard to the formation of nuclei, crystallites and final crystals on the films. The films were found to be affected by high temperature annealing. The crystals and the thin films were characterized with scanning electron microscopy.

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