High Temperature Reproducible Preparation of Mg2Si Films on (001)Al2O3 substrates Using RF Magnetron Sputtering Method

2014 ◽  
Vol 1642 ◽  
Author(s):  
Atsuo Katagiri ◽  
Shota Ogawa ◽  
Takao Shimizu ◽  
Masaaki Matsushima ◽  
Kensuke Akiyama ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Single Phase ◽  
High Vacuum ◽  
Stoichiometric Composition ◽  
Target Surface ◽  
Rf Magnetron Sputtering ◽  
Area Ratio ◽  
Ultra High Vacuum ◽  
Process Window ◽  
Si Films

ABSTRACTA RF magnetron sputtering method was used to prepare Mg2Si films at 300-400oC on (001) Al2O3 substrates from a Mg disc target with Si chips. Mg deposition was not detected at 400°C from a pure Mg disc target without Si chips due to the high vapor pressure of Mg. However, the amount of Mg deposition increased with the increase in Si/(Mg+Si) area ratio of the target surface together with the increase of the Si deposition. The obtained films had a stoichiometric composition of Si/(Mg+Si)=0.33 that consisted of the well crystalline Mg2Si single phase regardless of Si/(Mg+Si) area ratio of the target surface. This showed the existence of a “process window” against supply ratio of Si/(Mg+Si) for Mg2Si single phase films with a stoichiometric composition. This is considered to be due to the vaporization of the excess Mg prepared under the Mg excess condition as reported by Mahan et al. for Mg2Si films prepared at 200°C by ultra-high vacuum evaporation.

TiO2/SiO2 multilayer as an antireflective and protective coating deposited by microwave assisted magnetron sputtering

2013 ◽  
Vol 21 (2) ◽  
Author(s):  
M. Mazur ◽  
D. Wojcieszak ◽  
J. Domaradzki ◽  
D. Kaczmarek ◽  
S. Song ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Vacuum ◽  
Visible Spectrum ◽  
Ultra High Vacuum ◽  
Protective Film ◽  
Wetting Properties ◽  
Microwave Assisted ◽  
Atomic Force ◽  
Packed Structure ◽  
Protective Performance

AbstractIn this paper designing, preparation and characterization of multifunctional coatings based on TiO2/SiO2 has been described. TiO2 was used as a high index material, whereas SiO2 was used as a low index material. Multilayers were deposited on microscope slide substrates by microwave assisted reactive magnetron sputtering process. Multilayer design was optimized for residual reflection of about 3% in visible spectrum (450–800 nm). As a top layer, TiO2 with a fixed thickness of 10 nm as a protective film was deposited. Based on transmittance and reflectance spectra, refractive indexes of TiO2 and SiO2 single layers were calculated. Ultra high vacuum atomic force microscope was used to characterize the surface properties of TiO2/SiO2 multilayer. Surface morphology revealed densely packed structure with grains of about 30 nm in size. Prepared samples were also investigated by nanoindentation to evaluate their protective performance against external hazards. Therefore, the hardness of the thin films was measured and it was equal to 9.34 GPa. Additionally, contact angle of prepared coatings has been measured to assess the wetting properties of the multilayer surface.

Ferroelectric Properties and Microstructures of Tb4O7-Doped Bi4Ti3O12 Thin Films

2010 ◽  
Vol 105-106 ◽  
pp. 259-262 ◽  
Author(s):  
X.A. Mei ◽  
Min Chen ◽  
A.H. Cai ◽  
K.L. Su ◽  
Chong Qing Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Remarkable Improvement

Tb4O7-doped bismuth titanate (BixTbyTi3O12 BTT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique, and the microstructures and ferroelectric properties of the films were investigated. Microstructure studies indicate that all of BTT films with well-developed rod-like grains consist of single phase of a bismuth-layered structure without preferred orientation. The experimental results indicate that Tb doping into Bi4Ti3O12 results in a remarkable improvement in ferroelectric properties. The remanent polarization (Pr) and coercive field (Ec) of the BTT film with y=0.6 were 22 μC/cm2 and 85 kV/cm, respectively.

Single-phase aluminum nitride films by dc-magnetron sputtering

1990 ◽  
Vol 5 (11) ◽  
pp. 2677-2681 ◽  
Author(s):  
J. S. Morgan ◽  
W. A. Bryden ◽  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
T. O. Poehler
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Partial Pressure ◽  
Single Phase ◽  
Target Surface ◽  
Partial Pressures ◽  
Wide Range ◽  
Single Crystal Sapphire ◽  
Deposited Film ◽  
Deposited Films

Single-phase aluminum nitride films were deposited onto fused quartz and single-crystal sapphire by current-controlled, reactive, de magnetron sputtering from an aluminum metal target. Optical and structural properties were observed to correlate systematically with the composition of the sputter gas over a wide range of nitrogen partial pressures. A transition in the electrical conductivity of the deposited films occurred as a function of N2 partial pressure. This transition is driven by the condition of the target surface. When the N2 partial pressure was high and the target surface was substantially covered with AlNx, the deposited film was insulating, stoichiometric AlN. When the N2 partial pressure was low and the target surface was substantially Al°, the deposited film was conducting, substoichiometric AlNx.

High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

1987 ◽  
Vol 95 ◽  
Author(s):  
Shinya Tsuda ◽  
Hisao Haku ◽  
Hisaki Tarui ◽  
Takao Matsuyama ◽  
Katsunobu Sayama ◽  
...  
Keyword(s):  
Conversion Efficiency ◽  
Photovoltaic Effect ◽  
High Vacuum ◽  
Reaction Chamber ◽  
Wide Bandgap ◽  
Ultra High Vacuum ◽  
High Quality ◽  
Cvd Method ◽  
Superlattice Structure ◽  
Si Films

AbstractIn order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

Deposition of a-Si:H Devices in a RTR System for Photovoltaic and Macroelectronic Applications

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Scholz ◽  
D. Peros ◽  
M. Böhm
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Molecular Flow ◽  
Metal Contacts ◽  
High Quality ◽  
First Results

AbstractThis work presents first results of potential manufacturing processes for integrated series connected hydrogenated amorphous silicon (a-Si:H) thin film solar modules and/or pindiode/TFT based macroelectronic circuits on flexible tapes. A RTR (Reel-To-Reel) deposition system on laboratory scale has been built, The system consists of seven metal sealed LIHV stinless steel chambers to obtain ultra high vacuum as a basis for high quality a-Si:H layers, in order to support continuous movement of the tape in the RTR process the chambers cannot be isolated from each other. The necessary pressure difference between the sputtering chambers and the PECVD (Plasma Enhanced Chemical Vapor Deposition) chambers is provided by pressure stages. They are optimized for high molecular flow resistance without any influence on the moving substrate tape. The back metal contacts and the semitransparent TCO (Transparent Conductive Oxide) contacts are deposited by rf magnetron sputtering, the a-Si:H film system is deposited by PECVD. Parallel to the film deposition a Nd:YAG laser patterning system is coupled into one chamber. This allows for instance a total manufacturing of integrated series connected solar modules in one system without breaking the vacuum. Our present investigations focus on the deposition of doped and intrinsic high quality a-Si:H based layers in neighboring chambers. The quality of semiconducting films deposited in adjacent chambers is studied with regard to potential contamination effects.

CORRELATION AMONG THE ELECTRONIC STATE IN Sn-DOPED YBCO SYSTEM

1991 ◽  
Vol 05 (08) ◽  
pp. 581-585
Author(s):  
H. ZHANG ◽  
S.Q. FENG ◽  
Q.R. FENG ◽  
X. ZHU
Keyword(s):  
Content Analysis ◽  
Binding Energy ◽  
Photoelectron Spectroscopy ◽  
Strong Correlation ◽  
Single Phase ◽  
Vacuum Chamber ◽  
High Vacuum ◽  
Electronic States ◽  
Ultra High Vacuum ◽  
X Ray

We have performed an X-ray photoelectron spectroscopy investigation on single-phase samples of Sn -doped YBCO system, together with structure analysis, oxygen content analysis, and superconductivity measurements. The experiment gave evidence that there is a strong correlation between the electronic states of copper and oxygen. When the sample was heated to 600°C for 20 minutes in vacuum chamber, the oxygen escaped from the sample, the binding energy of Cu 2p was decreased, and the two indistinct components of O 1s became clear. Keeping the sample in ultra-high vacuum for 24 hours, a similar result was obtained.

Structure evolution in Ag/Ni multilayers grown by ultra high vacuum DC magnetron sputtering

1999 ◽  
Vol 353 (1-2) ◽  
pp. 166-173 ◽  
Author(s):  
P. Sandström ◽  
E.B. Svedberg ◽  
M.P. Johansson ◽  
J. Birch ◽  
J.-E. Sundgren
Keyword(s):  
Magnetron Sputtering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Structure Evolution ◽  
Dc Magnetron Sputtering
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