Deposition of a-Si:H Devices in a RTR System for Photovoltaic and Macroelectronic Applications

1999 ◽  
Vol 557 ◽  
Author(s):  
M. Scholz ◽  
D. Peros ◽  
M. Böhm
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
Transparent Conductive Oxide ◽  
Rf Magnetron Sputtering ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Molecular Flow ◽  
Metal Contacts ◽  
High Quality ◽  
First Results

AbstractThis work presents first results of potential manufacturing processes for integrated series connected hydrogenated amorphous silicon (a-Si:H) thin film solar modules and/or pindiode/TFT based macroelectronic circuits on flexible tapes. A RTR (Reel-To-Reel) deposition system on laboratory scale has been built, The system consists of seven metal sealed LIHV stinless steel chambers to obtain ultra high vacuum as a basis for high quality a-Si:H layers, in order to support continuous movement of the tape in the RTR process the chambers cannot be isolated from each other. The necessary pressure difference between the sputtering chambers and the PECVD (Plasma Enhanced Chemical Vapor Deposition) chambers is provided by pressure stages. They are optimized for high molecular flow resistance without any influence on the moving substrate tape. The back metal contacts and the semitransparent TCO (Transparent Conductive Oxide) contacts are deposited by rf magnetron sputtering, the a-Si:H film system is deposited by PECVD. Parallel to the film deposition a Nd:YAG laser patterning system is coupled into one chamber. This allows for instance a total manufacturing of integrated series connected solar modules in one system without breaking the vacuum. Our present investigations focus on the deposition of doped and intrinsic high quality a-Si:H based layers in neighboring chambers. The quality of semiconducting films deposited in adjacent chambers is studied with regard to potential contamination effects.

One-Step Cost-Effective Growth of High-Quality Epitaxial Ge Films on Si (100) Using a Simplified PECVD Reactor

2021 ◽  
Vol 2 (4) ◽  
pp. 482-494
Author(s):  
Jignesh Vanjaria ◽  
Venkat Hariharan ◽  
Arul Chakkaravarthi Arjunan ◽  
Yanze Wu ◽  
Gary S. Tompa ◽  
...  
Keyword(s):  
Film Growth ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Cost Effective ◽  
Single Step ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
High Quality ◽  
X Ray

Heteroepitaxial growth of Ge films on Si is necessary for the progress of integrated Si photonics technology. In this work, an in-house assembled plasma enhanced chemical vapor deposition reactor was used to grow high quality epitaxial Ge films on Si (100) substrates. Low economic and thermal budget were accomplished by the avoidance of ultra-high vacuum conditions or high temperature substrate pre-deposition bake for the process. Films were deposited with and without plasma assistance using germane (GeH4) precursor in a single step at process temperatures of 350–385 °C and chamber pressures of 1–10 Torr at various precursor flow rates. Film growth was realized at high ambient chamber pressures (>10−6 Torr) by utilizing a rigorous ex situ substrate cleaning process, closely controlling substrate loading times, chamber pumping and the dead-time prior to the initiation of film growth. Plasma allowed for higher film deposition rates at lower processing temperatures. An epitaxial growth was confirmed by X-Ray diffraction studies, while crystalline quality of the films was verified by X-ray rocking curve, Raman spectroscopy, transmission electron microscopy and infra-red spectroscopy.

Growth and Characterization of High Quality Si 1- x-y Ge x C y Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

1999 ◽  
Vol 16 (10) ◽  
pp. 750-752 ◽  
Author(s):  
Zhen Qi ◽  
Jing-yun Huang ◽  
Zhi-zhen Ye ◽  
Huan-ming Lu ◽  
Wei-hua Chen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Quality

A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications

2008 ◽  
Vol 1068 ◽  
Author(s):  
Mustafa Jamil ◽  
Joseph P Donnelly ◽  
Se-Hoon Lee ◽  
Davood Shahrjerdi ◽  
Tarik Akyol ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Electron Mobility ◽  
Compressive Strain ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
High Electron ◽  
High Quality

ABSTRACTWe report the growth and characterization of thin germanium-carbon layers grown directly on Si (111) by ultra high-vacuum chemical vapor deposition. The thickness of the films studied is 8-20 nm. The incorporation of small amount (less than 0.5%) of carbon facilitates 2D growth of high quality Ge crystals grown directly on Si (111) without the need of a buffer layer. The Ge1−xCx layers were grown in ultra high vacuum chemical vapor deposition chamber, at a typical pressure of 50 mTorr and at a growth temperature of 440 °C. CH3GeH3 and GeH4 gases were used as the precursors for the epitaxial growth. The Ge1−xCx films were characterized by atomic force microscopy (AFM), secondary ion mass spectroscopy, x-ray diffraction, cross-sectional transmission electron microscopy and Raman spectroscopy. The AFM rms roughness of Ge1−xCx grown directly on Si (111) is only 0.34 nm, which is by far the lowest rms roughness of Ge films grown directly on Si (111). The dependence of growth rate and rms roughness of the films on temperature, C incorporation and deposition pressure was studied. In Ge, (111) surface orientation has the highest electron mobility; however, compressive strain in Ge degrades electron mobility. The technique of C incorporation leads to a low defect density Ge layer on Si (111), well above the critical thickness. Hence high quality crystalline layer of Ge directly on Si (111) can be achieved without compressive strain. The fabricated MOS capacitors exhibit well-behaved electrical characteristics. Thus demonstrate the feasibility of Ge1−xCx layers on Si (111) for future high-carrier-mobility MOS devices that take advantage of high electron mobility in Ge (111).

The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).

1987 ◽  
Vol 105 ◽  
Author(s):  
Sang S. Kim ◽  
D. V. Tsu ◽  
G. Lucovsky
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Film Deposition ◽  
Ultra High Vacuum ◽  
Semiconductor Surface ◽  
Remote Plasma

AbstractWe have constructed an Ultra High Vacuum (UHV) multichamber system and have deposited ‘gate quality’ silicon dioxide by the remote plasma enhanced chemical vapor deposition (Remote PECVD) process at low substrate temperatures (Ts ≤400 °C). Native oxides and other surface contaminants are removed under ultra high vacuum (UHV) conditions and the character of the semiconductor surface is determined prior to film deposition using in-situ Reflection High Energy Electron Defraction (RHEED). Measurents made on MOS structures of capacitance-voltage, current-voltage, field break-down, hysteresis, and mobile ion drift indicate that these films are ‘comparable’ to thermally (Ts >1100 °C) grown oxides. The structural properties of the films arg studied by ir spectroscopy and ellipsometry.

Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD

2002 ◽  
Vol 742 ◽  
Author(s):  
C. Calmes ◽  
V. Le ◽  
D. Bouchier ◽  
S. E. Saddow ◽  
V. Yam ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
First Results ◽  
Ge Quantum Dots

AbstractWe report our first results using a ultra high vacuum chemical vapor deposition (UHV-CVD) system to form Ge quantum dots on off-axis SiC substrates. Pure SiH4 and hydrogen-diluted GeH4 were used as gas precursors. The SiC substrates were chemically cleaned using the modified RCA process and the SiO2 layer was removed in-situ under a low SiH4 flow rate at a temperature between 1030°C and 1080°C. The Ge quantum dots were grown at a temperature of 750°C. In-situ reflection high-energy electron diffraction (RHEED) was used to monitor the surface cleaning and the Ge quantum dot growth. Ex-situ scanning electron microscope and atomic force microscopy were used to confirm the presence of Ge dots. The observed dots are smaller (350 Å width and 100 Å height) than similar Ge dots grown on Si.

Challenge to 200 mm 3C-SiC Wafers Using SOI

2005 ◽  
Vol 483-485 ◽  
pp. 205-208 ◽  
Author(s):  
Motoi Nakao ◽  
Hirofumi Iikawa ◽  
Katsutoshi Izumi ◽  
Takashi Yokoyama ◽  
Sumio Kobayashi
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Seed Layer ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Average Thickness ◽  
Entire Region ◽  
Transmission Electron ◽  
Good Crystallinity

200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI wafer was thinned down to approximately 5 nm by sacrificial oxidization, and the ultrathin top Si layer was metamorphosed into a 3C-SiC seed layer using a carbonization process. Afterward, an epitaxial SiC layer was grown on the SiC seed layer with ultra-high vacuum chemical vapor deposition. A cross-section transmission electron microscope indicated that a 3C-SiC seed layer was formed directly on the buried oxide layer of 200 mm wafer. The epitaxial SiC layer with an average thickness of approximately 100 nm on the seed was recognized over the entire region of the wafer, although thickness uniformity of the epitaxial SiC layer was not as good as that of SiC seed layer. A transmission electron diffraction image of the epitaxial SiC layer showed a monocrystalline 3C-SiC(100) layer with good crystallinity. These results indicate that our method enables to realize 200 mm SiC wafers.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum
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