Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells

2013 ◽  
Vol 1551 ◽  
pp. 143-148
Author(s):  
R. Vasan ◽  
Y. F. M. Makableh ◽  
J. C. Sarker ◽  
M. O. Manasreh
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Power Conversion ◽  
Open Circuit ◽  
Interband Transitions ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTSolar cells based on InAs quantum dots embedded in InxGa1-xAs quantum wells grown on n-type GaAs substrate were fabricated and tested. Solar cells with In mole fraction (x) in the range of 0-40% were investigated. The performance of the solar cells was evaluated using current-voltage characteristics, spectral response, and quantum efficiency measurements. The spectral response and quantum efficiency spectra possess several peaks along the lower energy side of the spectra, which are attributed to the interband transitions in the structure. These peaks are red shifted as x is increased above 0 %. The device power conversion efficiency was extracted from the current-voltage characteristics using an AM 1.5 solar simulator. The short circuit current density increased as the x is increased above 0 %. But the overall power conversion efficiency decreased due to decrease in the open circuit voltage. The decrease in open circuit voltage is due strain induced dislocations caused by lattice mismatch.

Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings

2013 ◽  
Vol 1551 ◽  
pp. 155-161
Author(s):  
Y. F. Makableh ◽  
R. Vasan ◽  
J. C. Sarker ◽  
S. Lee ◽  
M. A. Khan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
Quantum Well ◽  
Spectral Response ◽  
Sol Gel ◽  
Absorption Enhancement ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Before And After

ABSTRACTA study on light absorption enhancement of an InAs quantum dots embedded into InxGa1-xAs quantum well with GaAs as a barrier solar cells was carried out. Solar cell devices were fabricated from different structures, which were grown by using molecular beam epitaxy, with the In mole fraction (x) varied between 0 – 25 %. Poly-L-Lysine ligands and ZnO sol-gel was used to modify the surface of the solar cells and act as anti-reflection coatings. The anti-reflection characteristic of the ligands and the sol-gel were investigated by measuring the solar cell characteristics before and after the solar cells surface modifications. The current-voltage characteristics were measured of the fabricated solar cells before and after Poly-L-Lysine and ZnO coatings. A significant enhancement on the order of 40 % of the solar cells performance was observed. This type of enhancement was observed in the power conversion efficiency, spectral response measurements, and external quantum efficiency.

Efficient large guanidinium mixed perovskite solar cells with enhanced photovoltage and low energy losses

2019 ◽  
Vol 55 (30) ◽  
pp. 4315-4318 ◽  
Author(s):  
Shengfan Wu ◽  
Zhen Li ◽  
Jie Zhang ◽  
Tiantian Liu ◽  
Zonglong Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Open Circuit ◽  
Low Energy ◽  
Energy Losses ◽  
Perovskite Lattice

We present a strategy for suppressing the open-circuit voltage (Voc) loss of perovskite solar cells by incorporating large guanidinium cations (Gua+) into a perovskite lattice, leading to a significantly improved Voc of 1.19 V and an impressive power conversion efficiency of >21%.

scholarly journals CdSe Quantum Dots Sensitized Mesoporous TiO2Solar Cells with CuSCN as Solid-State Electrolyte

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Guanbi Chen ◽  
Lei Wang ◽  
Yu Zou ◽  
Xia Sheng ◽  
Hongjuan Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solid State ◽  
Barrier Layer ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Cdse Quantum Dots ◽  
Solid State Electrolyte ◽  
Capping Agents ◽  
Organic Capping

Mesoporous TiO2is functionalized by 3-mercaptopropyl trimethyoxysilane (MPTMS) to anchor CdSe quantum dots (QDs). The resulting TiO2/CdSe is combined with solid-state electrolyte (CuSCN) to form solar cells. It is found that the efficiency of electron injection from QDs to TiO2can be improved owing to the substitution of the long chains of organic capping agents at the surface of QDs with MPTMS. The hydrolyzate of MPTMS forms an insulating barrier layer to reduce the recombination at the TiO2/CdSe interface, leading to the increase of open-circuit voltage (Voc).

Visible Light Photodiodes and Photovoltages from Detonation Nanodiamonds

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 971-975
Author(s):  
Bohuslav Rezek ◽  
Stepan Stehlik ◽  
Alexander Kromka ◽  
Jean-Charles Arnault ◽  
Martin Weis ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Green Laser ◽  
Open Circuit ◽  
Detonation Nanodiamonds ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Energy Conversion Devices ◽  
532 Nm

ABSTRACTMacroscopic and microscopic photovoltage characteristics of detonation nanodiamonds (DNDs) with distinct surface terminations are presented. Organic photodiodes are fabricated based on P3HT+DNDs mixture (50 wt%). We compare effect of hydrogen and oxygen termination of DNDs. Compared to photodiodes without DNDs the current-voltage characteristics of photodiodes with O-DNDs in dark and under AM 1.5 illumination show reduced dark current, and higher photocurrent and open circuit voltage. H-DNDs shunt the photodiodes, which is attributed to their surface conductivity. Kelvin probe force microscopy detects a reproducible photovoltage of around 5 mV generated by a green laser (532 nm) on both types of pristine DNDs. Thus although conductivity of H-DNDs may represent a problem for photodiodes, both types of DNDs alone can function as miniature energy conversion devices.

The first thieno[3,4-b]pyrazine based small molecular acceptor with a linear A2–A1–D–A1–A2 skeleton for fullerene-free organic solar cells with a high Voc of 1.05 V

2018 ◽  
Vol 54 (76) ◽  
pp. 10770-10773 ◽  
Author(s):  
Jianfeng Li ◽  
Jing Yang ◽  
Junyi Hu ◽  
You Chen ◽  
Bo Xiao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Open Circuit ◽  
Moderate Power

The first thieno[3,4-b]pyrazine (TP) based non-fullerene acceptor was designed and synthesized, which could realize a moderate power conversion efficiency (PCE) of 5.81% with a high open-circuit voltage (Voc) of 1.05 V by using J61 as a donor polymer.

scholarly journals Lindqvist polyoxometalates as electrolytes in p-type dye sensitized solar cells

2019 ◽  
Vol 3 (1) ◽  
pp. 96-100 ◽  
Author(s):  
Tijmen M. A. Bakker ◽  
Simon Mathew ◽  
Joost N. H. Reek
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Dye Sensitized Solar Cells ◽  
Open Circuit ◽  
Dye Sensitized ◽  
Redox Couples ◽  
P Type ◽  
Sensitized Solar Cells

The development of new redox couples provides a clear strategy to improve power conversion efficiency (PCE) in p-type dye-sensitized solar cells (p-DSSCs) through enabling improvements in open-circuit voltage (VOC).

Ternary organic solar cells: using molecular donor or acceptor third components to increase open circuit voltage

2019 ◽  
Vol 43 (26) ◽  
pp. 10442-10448 ◽  
Author(s):  
Sergey V. Dayneko ◽  
Arthur D. Hendsbee ◽  
Jonathan R. Cann ◽  
Clément Cabanetos ◽  
Gregory C. Welch
Keyword(s):  
Solar Cells ◽  
Organic Photovoltaics ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Open Circuit ◽  
Molecular Semiconductors ◽  
Conversion Efficiencies ◽  
Open Circuit Voltages

The addition of donor or acceptor type molecular semiconductors to PBDB-T:PC60BM based organic photovoltaics leads to increases in open circuit-voltages and overall power conversion efficiencies.

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

2018 ◽  
Vol 284 ◽  
pp. 182-187
Author(s):  
E.E. Blokhin ◽  
D.A. Arustamyan ◽  
L.M. Goncharova
Keyword(s):  
Quantum Dots ◽  
High Speed ◽  
Ion Beam ◽  
Inas Quantum Dots ◽  
Potential Barriers ◽  
Near Ir ◽  
Current Voltage ◽  
Ir Photodetectors ◽  
Current Voltage Characteristics ◽  
Beam Deposition

In this paper we present the results of investigation of heterostructures with an array of InAs quantum dots grown on GaAs substrates with GaAs and AlGaAs front barriers for high-speed near-IR photodetectors. The thickness of the barrier layers did not exceed 30 nm. It is shown that the ion-beam deposition method makes it possible to grow quantum dots with lateral dimensions up to 30 nm and 15 nm height. The spectral dependences of the external quantum efficiency and dark current-voltage characteristics are investigated.

Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Guimard ◽  
N. Bodereau ◽  
J. Kurdi ◽  
J.F. Guillemoles ◽  
D. Lincot ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Deposition Process ◽  
Open Circuit ◽  
Response Analysis ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractCuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

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