Visible Light Photodiodes and Photovoltages from Detonation Nanodiamonds

MRS Advances ◽  
2016 ◽  
Vol 1 (14) ◽  
pp. 971-975
Author(s):  
Bohuslav Rezek ◽  
Stepan Stehlik ◽  
Alexander Kromka ◽  
Jean-Charles Arnault ◽  
Martin Weis ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Green Laser ◽  
Open Circuit ◽  
Detonation Nanodiamonds ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Energy Conversion Devices ◽  
532 Nm

ABSTRACTMacroscopic and microscopic photovoltage characteristics of detonation nanodiamonds (DNDs) with distinct surface terminations are presented. Organic photodiodes are fabricated based on P3HT+DNDs mixture (50 wt%). We compare effect of hydrogen and oxygen termination of DNDs. Compared to photodiodes without DNDs the current-voltage characteristics of photodiodes with O-DNDs in dark and under AM 1.5 illumination show reduced dark current, and higher photocurrent and open circuit voltage. H-DNDs shunt the photodiodes, which is attributed to their surface conductivity. Kelvin probe force microscopy detects a reproducible photovoltage of around 5 mV generated by a green laser (532 nm) on both types of pristine DNDs. Thus although conductivity of H-DNDs may represent a problem for photodiodes, both types of DNDs alone can function as miniature energy conversion devices.

scholarly journals Противодействующий фотовольтаический эффект в верхней межгенераторной части трехпереходных GaInP/GaAs/Ge солнечных элементов

2019 ◽  
Vol 53 (11) ◽  
pp. 1568
Author(s):  
М.А. Минтаиров ◽  
В.В. Евстропов ◽  
С.А. Минтаиров ◽  
М.З. Шварц ◽  
Н.А. Калюжный
Keyword(s):  
Electric Power ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Undesirable Effect ◽  
Current Dependence ◽  
Power Generators ◽  
Current Voltage ◽  
Current Voltage Characteristics

AbstractThe “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the V _ oc – J _ sc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p ^+– n ^+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p – n junctions. In this case, the V _ oc – J _ sc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.

Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells

2013 ◽  
Vol 1551 ◽  
pp. 143-148
Author(s):  
R. Vasan ◽  
Y. F. M. Makableh ◽  
J. C. Sarker ◽  
M. O. Manasreh
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Power Conversion ◽  
Open Circuit ◽  
Interband Transitions ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTSolar cells based on InAs quantum dots embedded in InxGa1-xAs quantum wells grown on n-type GaAs substrate were fabricated and tested. Solar cells with In mole fraction (x) in the range of 0-40% were investigated. The performance of the solar cells was evaluated using current-voltage characteristics, spectral response, and quantum efficiency measurements. The spectral response and quantum efficiency spectra possess several peaks along the lower energy side of the spectra, which are attributed to the interband transitions in the structure. These peaks are red shifted as x is increased above 0 %. The device power conversion efficiency was extracted from the current-voltage characteristics using an AM 1.5 solar simulator. The short circuit current density increased as the x is increased above 0 %. But the overall power conversion efficiency decreased due to decrease in the open circuit voltage. The decrease in open circuit voltage is due strain induced dislocations caused by lattice mismatch.

Correlation among the ionization potential, built-in potential, and the open-circuit voltage of multi-layered organic photovoltaic devices

2011 ◽  
Vol 1286 ◽  
Author(s):  
Eiji Itoh ◽  
Toshiki Shirotori
Keyword(s):  
Ionization Potential ◽  
Open Circuit Voltage ◽  
Energy Difference ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Organic Photovoltaic Devices ◽  
Extraction Buffer ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTWe have investigated the current-voltage characteristics of the multi-layered photovoltaic devices consisting of ITO/oxide /p-type (donor)/fullerene/ bathocuproine (BCP)/ Al structures. We chose various p-type (donors) small molecules and polymers in order to tune the values of ionization potential (IP) of donor molecules. The open-circuit voltage (Voc) increases with the increment of IP of donor materials. However, VOC was limited at ~0.6-0.7V for the devices without oxide layer. On the other hand, the VOC increases up to 0.9V for the devices with NiO and to ~ 1.1V for the devices with MoOX as a hole extraction buffer layer, respectively. We also estimated the work-function differences between Al and the oxide as 0.7, 0.9-1.0, and 1.2-1.3 eV for the device without oxide, with NiO, and with MoOX, respectively. We therefore concluded the value of VOC is limited by the lower part of VOC and energy difference between the LUMO of fullerene and the HOMO of donor ΔE.

scholarly journals Numerical Simulation of Carbon Nanotubes/GaAs Hybrid PV Devices with AMPS-1D

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Georgi Xosrovashvili ◽  
Nima E. Gorji
Keyword(s):  
Open Circuit Voltage ◽  
Defect Density ◽  
Open Circuit ◽  
Thickness Variation ◽  
Device Physics ◽  
Electrical Parameters ◽  
Single Walled Carbon Nanotube ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
And Performance

The performance and characteristics of a hybrid heterojunction single-walled carbon nanotube and GaAs solar cell are modelled and numerically simulated using AMPS-1D device simulation tool. The device physics and performance with different junction parameters are analysed. The results suggest that the open-circuit voltage changes very slightly by changing the electron affinity, acceptor and donor density while the other electrical parameters reach an optimum value. Increasing the concentration of a discrete defect density in the absorber layer decreases the electrical parameters. The current-voltage characteristics, quantum efficiency, band gap, and thickness variation of the photovoltaic response will be quantitatively considered.

scholarly journals Investigation of electrolysis-related modification of graphene films in biosensors

2021 ◽  
Vol 2103 (1) ◽  
pp. 012103
Author(s):  
I A Eliseyev ◽  
A S Usikov ◽  
S P Lebedev ◽  
A D Roenkov ◽  
M V Puzyk ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrolysis Mode ◽  
Modification Of The Surface

Abstract In this work, the modification of the surface parameters of graphene chips after electrolysis treatment in a NaClO4 aqueous solution has been studied. Two electrolysis modes have been analysed. In the first one, a negative potential (-0.2 V) is applied to the graphene chips, while in the second one the potential is positive (0.8 V). Investigation using a number of techniques including atomic force microscopy, Kelvin probe force microscopy, Raman spectroscopy, measurements of current-voltage characteristics and low-frequency noise has shown that the electrolysis mode with application of a positive potential on graphene chips decreases the 1/f noise and allows one to obtain a uniform surface potential distribution while leaving the graphene structure undamaged. The results of this study help to understand the efficiency and reproducibility of the procedure for electrolysis treatment of graphene chips.

Optoelectronic Properties of Vanadyl phthalocyanine Based Organic-Inorganic Hybrid Devices

2011 ◽  
Vol 110-116 ◽  
pp. 3255-3260
Author(s):  
Imran Murtaza ◽  
Khasan S. Karimov ◽  
Muhammad H. Sayyad ◽  
Ibrahim Qazi
Keyword(s):  
Reverse Bias ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Optoelectronic Properties ◽  
Hybrid Structures ◽  
Inorganic Hybrid ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Hybrid Devices ◽  
Very High

The Optoelectronic properties of organic-inorganic hybrid devices consisting of Ag/VOPc/n-Si/Ag structure have been investigated through analyzing the current-voltage characteristics. We have also studied the effect of illumination on the open circuit voltage, capacitance and reverse resistance with consideration of VOPc film thickness. The dark I-V characteristics display rectification behaviour of such hybrid structures and a very high photo-capacitive response under illumination of 200 lx is observed. Furthermore due to the generation of photo induced charges, under illumination, the decrease in reverse bias resistance to one third of its value is observed.

Influence of surface properties on the performance of Cu(In,Ga)(Se,S)2thin-film solar cells using Kelvin probe force microscopy

RSC Advances ◽  
2015 ◽  
Vol 5 (51) ◽  
pp. 40719-40725 ◽  
Author(s):  
JungYup Yang ◽  
Dongho Lee ◽  
KwangSoo Huh ◽  
SeungJae Jung ◽  
JiWon Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Surface Properties ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Absorber Layer ◽  
Kelvin Probe Force Microscopy ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Graded Band Gap

We have investigated the sulfurization process in a Cu(In,Ga)(Se,S)2absorber layer fabricated by a two-step sputter and selenization/sulfurization method in order to make an ideal double-graded band-gap profile and increase the open circuit voltage.

High Sensitivity Photochemical Sensors Based on Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
E. Fortunato ◽  
A. Malik ◽  
A. Séco ◽  
A. Maçarico ◽  
R. Martins
Keyword(s):  
Dark Current ◽  
Open Circuit Voltage ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Chemical Oxidation ◽  
Hydrogen Atmosphere ◽  
Open Circuit ◽  
Current Voltage ◽  
Magnitude Variation ◽  
Current Voltage Characteristics

ABSTRACTHydrogenated amoiphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

SELF-ASSEMBLED Ge-DOTS FOR Si SOLAR CELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4347-4351 ◽  
Author(s):  
H. PRESTING ◽  
J. KONLE ◽  
H. KIBBEL
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Elevated Temperatures ◽  
Growth Conditions ◽  
Open Circuit ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type

Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers increase the infrared absorption in the base of the cell to achieve higher photocurrent which should overcome the loss in the open circuit voltage due to incorporation of a smaller bandgap material in the heterostructure. Up to 75 layers of Ge, each about 8 monolayers (ML) thick, separated by Si-spacer layers (9-18nm) have been deposited at rather elevated temperatures (700°C) on a standard 10Ωcm p-type Si-substrate. Island densities of 1011 cm -2 have been achieved by use of antimony (Sb) as surfactant. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the growth of Ge-islands under variuos growth conditions. Photocurrent measurements exhibit a higher photo-response in the infrared regime but a lower open circuit voltage of the fabricated solar cells compared to a Si-reference cell.

Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Guimard ◽  
N. Bodereau ◽  
J. Kurdi ◽  
J.F. Guillemoles ◽  
D. Lincot ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Deposition Process ◽  
Open Circuit ◽  
Response Analysis ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractCuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

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