Shape Evolution of Faceted Silicon Nanocrystals upon Thermal Annealing in an Oxide Matrix

2013 ◽  
Vol 1536 ◽  
pp. 207-212 ◽  
Author(s):  
Zhenyu Yang ◽  
Alexander R. Dobbie ◽  
Jonathan G. C. Veinot
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Annealing Time ◽  
Silicon Nanocrystals ◽  
Shape Evolution ◽  
High Temperature Annealing ◽  
Hydrogen Silsesquioxane ◽  
Crystal Surfaces ◽  
Prolonged Annealing ◽  
Oxide Matrix

ABSTRACTIt is well established that controlled high-temperature annealing of hydrogen silsesquioxane leads to the formation of small spherical silicon nanocrystals (∼3 nm). The present study outlines an investigation into the influence of annealing time and temperature. After prolonged annealing, crystal surfaces thermodynamically self-optimize to form a variety of faceted structures (e.g., cubic, truncated trigonal and hexagonal structures).

Precipitation in silicon-on-insulator material during high- temperature annealing

1987 ◽  
Vol 45 ◽  
pp. 254-255
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
S.R. Wilson
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Annealing Time ◽  
High Speed ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
High Dose ◽  
High Temperature Annealing ◽  
Implantation Energy

Silicon-on-insulator (SOI) structure by high dose oxygen implantation (SIMOX) has excellent potential for use in radiation hardened and high speed integrated circuits. Device fabrication in SIMOX requires a high quality superficial Si layer above the buried oxide layer. Previously we reported on the effect of heater temperature, background doping, and annealing cycle on precipitate size, density, and location in the superficial Si layer. Precipitates were not eliminated with our processing conditions, but various authors have recently reported that high temperature annealing of SIMOX, from 1250°C to 1405°C, eliminates virtually all precipitates in the superficial Si layer. However, in those studies there were significant differences in implantation energy and dose and also annealing time and temperature. Here we are reporting on the effect of annealing time and temperature on the formation and changes in precipitates.

scholarly journals Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

RSC Advances ◽  
2015 ◽  
Vol 5 (47) ◽  
pp. 37881-37886 ◽  
Author(s):  
Duo Cao ◽  
Xinhong Cheng ◽  
Ya-Hong Xie ◽  
Li Zheng ◽  
Zhongjian Wang ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Temperature Annealing ◽  
Aln Film

AlN films are grown on AlGaN/GaN by PEALD. High-temperature annealing promotes complete nitridation of AlN film, and causes AlN to form a semiconductor-like structure.

Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

2018 ◽  
Vol 924 ◽  
pp. 160-163 ◽  
Author(s):  
Naohiro Sugiyama ◽  
Hiromasa Suo ◽  
Kazuma Eto ◽  
Yuichiro Tokuda ◽  
Isaho Kamata ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
High Temperatures ◽  
Stacking Faults ◽  
Electric Properties ◽  
High Temperature Annealing ◽  
Nitrogen Doped ◽  
Low Resistance ◽  
Partial Dislocations ◽  
Expansion Behavior

The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C. An immobilization phenomenon of partials surrounding DSFs was discovered by a thermal annealing at temperatures over 1275°C. The electric properties of SiC crystal were maintained after the partial dislocations were immobilized with a high temperature annealing. The mobile partial dislocations extended straight, but the immobile ones bent toward the glide direction. This immobilization phenomenon is significant and useful for achieving low-resistance SiC substrates without DSFs.

Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

2014 ◽  
Vol 1591 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Annealing Time ◽  
Silicon Crystal ◽  
Nitrogen Atmosphere ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Floating Zone ◽  
Cross Sectional ◽  
X Ray

ABSTRACTThe precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

Silicon nanocrystals from high-temperature annealing: Characterization on device level

2013 ◽  
Vol 210 (4) ◽  
pp. 669-675 ◽  
Author(s):  
Philipp Löper ◽  
Mariaconcetta Canino ◽  
Julian López-Vidrier ◽  
Manuel Schnabel ◽  
Florian Schindler ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Nanocrystals ◽  
High Temperature Annealing

High temperature annealing of Si core fiber with different annealing time

2020 ◽  
Vol 58 ◽  
pp. 102288 ◽  
Author(s):  
Ziwen Zhao ◽  
Li Ren ◽  
Jianbo Zhang ◽  
Shaoye Wang ◽  
Fei Xue ◽  
...  
Keyword(s):  
High Temperature ◽  
Annealing Time ◽  
High Temperature Annealing ◽  
Core Fiber
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