FORMATION OF SILICON NANOCRYSTALS IN Si-SiO2-a-Si-SiO2 HETEROSTRUCTURES DURING HIGH-TEMPERATURE ANNEALING: EXPERIMENT AND SIMULATION

2016 ◽  
Keyword(s):  
High Temperature ◽  
Silicon Nanocrystals ◽  
High Temperature Annealing ◽  
Annealing Experiment ◽  
Experiment And Simulation

Shape Evolution of Faceted Silicon Nanocrystals upon Thermal Annealing in an Oxide Matrix

2013 ◽  
Vol 1536 ◽  
pp. 207-212 ◽  
Author(s):  
Zhenyu Yang ◽  
Alexander R. Dobbie ◽  
Jonathan G. C. Veinot
Keyword(s):  
High Temperature ◽  
Thermal Annealing ◽  
Annealing Time ◽  
Silicon Nanocrystals ◽  
Shape Evolution ◽  
High Temperature Annealing ◽  
Hydrogen Silsesquioxane ◽  
Crystal Surfaces ◽  
Prolonged Annealing ◽  
Oxide Matrix

ABSTRACTIt is well established that controlled high-temperature annealing of hydrogen silsesquioxane leads to the formation of small spherical silicon nanocrystals (∼3 nm). The present study outlines an investigation into the influence of annealing time and temperature. After prolonged annealing, crystal surfaces thermodynamically self-optimize to form a variety of faceted structures (e.g., cubic, truncated trigonal and hexagonal structures).

Silicon nanocrystals from high-temperature annealing: Characterization on device level

2013 ◽  
Vol 210 (4) ◽  
pp. 669-675 ◽  
Author(s):  
Philipp Löper ◽  
Mariaconcetta Canino ◽  
Julian López-Vidrier ◽  
Manuel Schnabel ◽  
Florian Schindler ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon Nanocrystals ◽  
High Temperature Annealing

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

FERROPERM

Alloy Digest ◽  
1993 ◽  
Vol 42 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Physical Properties ◽  
Saturation Magnetization ◽  
Pure Iron ◽  
Magnetic Alloy ◽  
High Saturation Magnetization ◽  
High Temperature Annealing ◽  
Soft Magnetic ◽  
Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

Preparation of silicon-based nanowires through high-temperature annealing

2018 ◽  
Vol 42 (1) ◽  
pp. 149-158
Author(s):  
SHUANG XI ◽  
SHUANGSHUANG ZUO ◽  
YING LIU ◽  
YINLONG ZHU ◽  
YUTU YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Silicon Based
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