Electrical Contacts to Vertically Oriented Silicon Nano and Microdevices for Applications in Flexible Systems

2013 ◽  
Vol 1553 ◽  
Author(s):  
Mark Triplett ◽  
Hideki Nishimura ◽  
Matthew Ombaba ◽  
M. Saif Islam
Keyword(s):  
Large Scale ◽  
Electrical Contacts ◽  
Device Fabrication ◽  
Flexible Systems ◽  
Transfer Printing ◽  
Flexible Devices ◽  
Vertical Arrays ◽  
Contact Isolation ◽  
Crystalline Semiconductor ◽  
Printing Technique

ABSTRACTFlexible devices utilizing crystalline semiconductor nano or microstructures materials are attractive for many applications. However, these materials are fabricated or grown in unusable forms for flexible systems due to their rigid crystalline mother substrates. We demonstrate a transfer printing technique for transferring vertical arrays of one-dimensional (1D) materials from mother substrates to flexible substrates with subsequent device fabrication steps to create flexible devices from these arrays. The transfer printing technique is based on vertical embossing of arrays of 1D materials into thermoplastic (Poly (methyl methacrylate) (PMMA)) transfer layers, while the device fabrication steps rely on encapsulation with insulating polymers and contact deposition. We investigated the use of flexible insulating layers like polydimethylsiloxane (PDMS) and polyurethane (PU) which are shown to be effective for encapsulation and contact isolation. Representative flexible resistive devices were created from these transferred arrays and insulating layers which showed a reversible tactile characteristic. Electronic characterization and flexibility testing was carried out to show the potential of these methods for enabling large-scale integrations of nano and microstructures into vertical and flexible packages.

An Accurate Thermomechanical Model for Laser-Driven Microtransfer Printing

2017 ◽  
Vol 84 (6) ◽  
Author(s):  
Yuyan Gao ◽  
Yuhang Li ◽  
Rui Li ◽  
Jizhou Song
Keyword(s):  
Size Effect ◽  
Theoretical Basis ◽  
System Optimization ◽  
Engineering Systems ◽  
Transfer Printing ◽  
Thermomechanical Model ◽  
Element Analysis ◽  
Mechanics Model ◽  
Interfacial Fracture Mechanics ◽  
Printing Technique

A recently developed transfer printing technique, laser-driven noncontact microtransfer printing, which involves laser-induced heating to initiate the separation at the interface between the elastomeric stamp (e.g., polydimethylsiloxane (PDMS)) and hard micro/nanomaterials (e.g., Si chip), is valuable to develop advanced engineering systems such as stretchable and curvilinear electronics. The previous thermomechanical model has identified the delamination mechanism successfully. However, that model is not valid for small-size Si chip because the size effect is ignored for simplification in the derivation of the crack tip energy release rate. This paper establishes an accurate interfacial fracture mechanics model accounting for the size effect of the Si chip. The analytical predictions agree well with finite element analysis. This accurate model may serve as the theoretical basis for system optimization, especially for determining the optimal condition in the laser-driven noncontact microtransfer printing.

scholarly journals Photo-Induced Doping in a Graphene Field-Effect Transistor with Inkjet-Printed Organic Semiconducting Molecules

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1753 ◽  
Author(s):  
Nikita Nekrasov ◽  
Dmitry Kireev ◽  
Nejra Omerović ◽  
Aleksei Emelianov ◽  
Ivan Bobrinetskiy
Keyword(s):  
Inkjet Printing ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Organic Molecules ◽  
Electronic Device ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Effect Transistor ◽  
Organic Semiconducting Molecules

In this work, we report a novel method of maskless doping of a graphene channel in a field-effect transistor configuration by local inkjet printing of organic semiconducting molecules. The graphene-based transistor was fabricated via large-scale technology, allowing for upscaling electronic device fabrication and lowering the device’s cost. The altering of the functionalization of graphene was performed through local inkjet printing of N,N′-Dihexyl-3,4,9,10-perylenedicarboximide (PDI-C6) semiconducting molecules’ ink. We demonstrated the high resolution (about 50 µm) and accurate printing of organic ink on bare chemical vapor deposited (CVD) graphene. PDI-C6 forms nanocrystals onto the graphene’s surface and transfers charges via π–π stacking to graphene. While the doping from organic molecules was compensated by oxygen molecules under normal conditions, we demonstrated the photoinduced current generation at the PDI-C6/graphene junction with ambient light, a 470 nm diode, and 532 nm laser sources. The local (in the scale of 1 µm) photoresponse of 0.5 A/W was demonstrated at a low laser power density. The methods we developed open the way for local functionalization of an on-chip array of graphene by inkjet printing of different semiconducting organic molecules for photonics and electronics.

Thermal transfer printing technique for electrode patterning in cofired ceramic multi-layer devices

1994 ◽  
Vol 9 (5) ◽  
pp. 1193-1198
Author(s):  
Kumi Okuwada ◽  
Tetsuo Okuyama
Keyword(s):  
Metal Powder ◽  
Transfer Printing ◽  
Thermal Transfer ◽  
Ceramic Capacitor ◽  
Green Sheet ◽  
Printing Technique

A new mask-less electrode patterning method using a thermal transfer printing technique was investigated. Thermal ink ribbons were prepared, which included more than 50 vol. % conductive metal powder. Arbitrary electrode patterns were designed with a computer and printed out on a ceramic green sheet with a serial thermal printer. The ceramic green sheets with printed electrode patterns were stacked up and cofired to obtain a multi-layer ceramic capacitor.

scholarly journals Organic printed photonics: From microring lasers to integrated circuits

2015 ◽  
Vol 1 (8) ◽  
pp. e1500257 ◽  
Author(s):  
Chuang Zhang ◽  
Chang-Ling Zou ◽  
Yan Zhao ◽  
Chun-Hua Dong ◽  
Cong Wei ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Flexible Electronics ◽  
Integrated Circuit ◽  
Large Scale ◽  
Rapid Development ◽  
Light Signal ◽  
Photonic Integrated Circuit ◽  
Printing Technique ◽  
On Chip ◽  
Silicon Based

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

Alignment Change of Discotic Liquid Crystal Domains with Wavelength Tunable CO2 Laser Irradiation

2010 ◽  
Vol 428-429 ◽  
pp. 284-287
Author(s):  
Hirosato Monobe ◽  
Yo Shimizu
Keyword(s):  
Liquid Crystal ◽  
Laser Irradiation ◽  
Liquid Crystalline ◽  
Device Fabrication ◽  
Vibration Band ◽  
Discotic Liquid Crystal ◽  
Wavelength Tunable ◽  
Crystalline Semiconductor ◽  
Linearly Polarized ◽  
Stretching Vibration

Infrared-induced alignment change with wavelength tunable CO2 laser irradiation for columnar liquid crystal domains was investigated for a triphenylene-based discotic liquid crystal. A uniformly aligned alignment change of domains was observed when a plused linearly polarized infrared laser light corresponding to the wavelength of the aromatic C-O-C stretching vibration band (9.65µm) was irradiated while it was not re-aligned uniformly with continious wave irradiation. The results strongly imply that the infrared irradiation is a possible technique for device fabrication by use of columnar mesophase as a liquid crystalline semiconductor.

Synthesis of α–SiO2 nanowires using Au nanoparticle catalysts on a silicon substrate

2001 ◽  
Vol 16 (3) ◽  
pp. 683-686 ◽  
Author(s):  
Z. Q. Liu ◽  
S. S. Xie ◽  
L. F. Sun ◽  
D. S. Tang ◽  
W. Y. Zhou ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Large Scale ◽  
Device Fabrication ◽  
Au Nanoparticle ◽  
Large Panels ◽  
Transmission Electron ◽  
Temperature Scanning ◽  
Uniform Diameter ◽  
20 Nm

Large-scale SiO2 nanowires were synthesized by using a simple but an effective approach at low temperature. Scanning electron microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy were employed to characterize the samples. The results indicated that SiO2 nanowires with a uniform diameter of about 20 nm and a length up to 10 μm have been synthesized. Photoluminescence measurement showed that the SiO2 nanowires emitted blue light at 2.8 and 3.0 eV. The possible growth process of the SiO2 nanowires is discussed. Using this method, large panels of SiO2 nanowires can be made under conditions that are suitable for device fabrication.

scholarly journals Copper Indium Disulfide Quantum Dot Light Emitting Diodes for Display and Lighting Technologies

2019 ◽  
Vol 20 (3) ◽  
Author(s):  
Stefano Barba
Keyword(s):  
Reaction Time ◽  
Quantum Dot ◽  
Large Scale ◽  
Light Emitting Diodes ◽  
Device Fabrication ◽  
Device Structure ◽  
Light Emitting ◽  
High Performing ◽  
Copper Indium Disulfide ◽  
Copper Indium

While significant advances in the development of quantum dot light emitting diodes (QLEDs) have been reported, these devices are primarily based on cadmium chalcogenide quantum dot (QD) materials. Both environmental and health concerns arise due to the toxicity of cadmium and consequently, alternative less toxic QDs must be developed for large scale QLED applications such as display and solid state lighting technologies.  In this work, copper indium disulfide (CIS) was investigated as an alternative QD material for QLED applications. Through experimentation with material synthesis and device fabrication, this project aimed to develop high performing CIS QLEDs. Several synthetic approaches were experimented with and it was determined that the injection of shorter chain 1-octanethoil as sulfur precursor with extensive shell reaction time resulted in highly luminescent QDs.  Single color QLEDs were fabricated based on typical device structure, using highly luminescent synthesized CIS QDs as the emissive layer in multilayer devices. Varying the shell reaction time of QDs in order to vary shell thickness resulted in significant differences in device performance. Using thicker shell QDs, high performing devices were obtained with the best performing QLEDs displaying a high peak current efficiency of 14.7 cd/A and high external quantum efficiency of 5.2%.

scholarly journals Pattern Transfer Printing by Controlling the Deposition Angle to Form Various Patterns

2020 ◽  
Vol 58 (2) ◽  
pp. 145-150
Author(s):  
Tae Wan Park ◽  
Woon Ik Park
Keyword(s):  
Electronic Device ◽  
Functional Materials ◽  
Practical Method ◽  
Optical Microscope ◽  
Device Fabrication ◽  
Transfer Printing ◽  
Si Substrates ◽  
Functional Patterns ◽  
Device Applications ◽  
Pattern Resolution

The nanofabrication of modern electronic devices requires advanced nanopatterning technologies. To fabricate desirable nanodevices with excellent device performance, controlling the shape and dimension of the pattern is very important. However, to achieve more facile and faster device fabrication, with better pattern resolution, pattern-tunability, process simplicity, and cost-effectiveness, some remaining challenges still need to be resolved. In this study, we introduce a simple and practical method to generate various patterns using a nanotransfer printing (nTP) process. To obtain functional materials with diverse shapes on a polymer replica pattern, in the nTP process we controlled the angle of deposition before transfer-printing. First, we obtained three different pattern shapes with a thickness of ~ 30 nm on polymethyl methacrylate (PMMA) replica patterns. Then, the deposited functional patterns on the PMMA patterns are successfully transfer-printed onto SiO<sub>2</sub>/Si substrates, showing line, L-shape line, and concavo-convex patterns. We observed the pattern shapes of the patterns by scanning electron microscope (SEM) and optical microscope. Moreover, we systemically analyzed how to form patterns of various shapes using one kind of master mold. We expect that this simple approach will be widely used to fabricate various useful patterns for electronic device applications.

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