Non radiative recombination centers in ZnO nanorods

2013 ◽  
Vol 1538 ◽  
pp. 317-322 ◽  
Author(s):  
D. Montenegro ◽  
V. Hortelano ◽  
O. Martínez ◽  
M. C. Martínez-Tomas ◽  
V. Sallet ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Surface Defects ◽  
Zno Nanorods ◽  
Optical Characterization ◽  
Extended Defects ◽  
Zinc Vacancy ◽  
Catalyst Free ◽  
Raman Modes ◽  
Recombination Centers

ABSTRACTNowadays, the nature of the non radiative recombination centres in ZnO is a matter of controversy; they have been related to extended defects, zinc vacancy complexes, and surface defects, among other possible candidates. We present herein the optical characterization of catalyst free ZnO nanorods grown by atmospheric MOCVD by microRaman and cathodoluminescence spectroscopies. The correlation between the defect related Raman modes and the cathodoluminescence emission along the nanorods permits to establish a relation between the non radiative recombination centers and the defects responsible for the local Raman modes, which have been related to Zn interstitial complexes.

Electrical and optical characterization of extended defects in silicon mono-cast material

2012 ◽  
Vol 9 (10-11) ◽  
pp. 2158-2163 ◽  
Author(s):  
B. Moralejo ◽  
A. Tejero ◽  
V. Hortelano ◽  
O. Martínez ◽  
J. Jiménez ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Extended Defects ◽  
Cast Material

Impurity Segregation in Al Doped GaSb Studied by Cathodoluminescence Microscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Hidalgo ◽  
B. Mendez ◽  
J. Piqueras ◽  
P.S. Dutta
Keyword(s):  
Electron Microscope ◽  
Radiative Recombination ◽  
Gallium Antimonide ◽  
General Structure ◽  
Extended Defects ◽  
Native Defect ◽  
Impurity Segregation ◽  
Defect Content ◽  
Recombination Centers ◽  
Scanning Electron

AbstractCathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with an isoelectronic dopant, aluminum, on the native acceptors and on the general structure of extended defects of gallium antimonide single crystals. While there is no significant change in the native defect content, decoration of non-radiative recombination centers or extended defects occurs as a result of aluminum doping.

Preparation and optical characterization of catalyst free SiO2 sonogel hybrid materials

2006 ◽  
Vol 41 (3) ◽  
pp. 277-289 ◽  
Author(s):  
Omar G. Morales-Saavedra ◽  
Ernesto Rivera ◽  
José O. Flores-Flores ◽  
Rosalba Castañeda ◽  
José G. Bañuelos ◽  
...  
Keyword(s):  
Hybrid Materials ◽  
Optical Characterization ◽  
Catalyst Free

Catalyst-Free Growth and Characterization of ZnO Nanorods

2002 ◽  
Vol 106 (37) ◽  
pp. 9546-9551 ◽  
Author(s):  
Jih-Jen Wu ◽  
Sai-Chang Liu
Keyword(s):  
Zno Nanorods ◽  
Catalyst Free ◽  
Free Growth

Doping and Oxidation Effects in Raman Spectra of Manganites

1999 ◽  
Vol 574 ◽  
Author(s):  
V. B. Podobedov ◽  
A. Weber ◽  
G. Dezanneau ◽  
S. Pignard ◽  
J. Kreizel ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Single Crystals ◽  
Oxygen Content ◽  
Physical Nature ◽  
Optical Characterization ◽  
Oxygen Deficit ◽  
Raman Shift ◽  
Raman Modes ◽  
Deposition Conditions

AbstractRaman scattering from LayRxMnO3-δ compounds (single crystals, ceramics, films) was studied as a function of kind (R) and amount (x) of dopant as well as of oxygen deficit (δ). For x = 0.1 to 0.55, a nearly linear Raman shift of the Ag mode from 240 to 125 cm−1 was observed in Srdoped compounds. While the intensity of disorder-induced Raman bands was found to be sensitive to the oxygen content, the symmetry allowed related Raman modes exhibit the changes in the frequency. As an indication of deposition conditions, lowering of a symmetry of the film structures with respect to single crystals and ceramics was detected. We discuss the physical nature of the observed effects and show how Raman data can be used for the optical characterization of manganite samples.

Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 315-318
Author(s):  
Nadeemullah A. Mahadik ◽  
Robert E. Stahlbush ◽  
Syed B. Qadri ◽  
Orest J. Glembocki ◽  
Dimitri A. Alexson ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystalline Structure ◽  
Radiative Recombination ◽  
Complex Structure ◽  
Extended Defects ◽  
Strain Fields ◽  
X Ray ◽  
Micro Raman Spectroscopy ◽  
Defect Sites ◽  
Recombination Centers

The structure of various inclusions in SiC epitaxial layers grown on 4o offcut substrates was investigated using three advanced techniques. Using micro-Raman spectroscopy, the observed inclusions exhibited a complex structure having either different SiC polytypes like 3C or 6H or they were misoriented 4H-SiC inclusions. The UVPL images showed dislocations and other extended defects around the inclusion-related defects, and strain fields were observed in the x-ray topographs near the defect sites. Spectral UVPL imaging shows features with varying luminescence inside the inclusion related defects which propagate and may cause deformation in the crystalline structure and lead to non-radiative recombination centers within the defect.

Structural and optical characterization of hydroxy-propyl methyl cellulose-capped ZnO nanorods

2013 ◽  
Vol 48 (16) ◽  
pp. 5536-5542 ◽  
Author(s):  
H. S. Bhatti ◽  
Sunil Kumar ◽  
Karamjit Singh ◽  
Kavita
Keyword(s):  
Zno Nanorods ◽  
Methyl Cellulose ◽  
Optical Characterization

scholarly journals Optical properties and carrier dynamics in Co-doped ZnO nanorods

2021 ◽  
Vol 3 (1) ◽  
pp. 214-222
Author(s):  
Aswathi K. Sivan ◽  
Alejandro Galán-González ◽  
Lorenzo Di Mario ◽  
Nicolas Tappy ◽  
Javier Hernández-Ferrer ◽  
...  
Keyword(s):  
Optical Properties ◽  
Crucial Role ◽  
Surface Defects ◽  
Zno Nanorods ◽  
Carrier Dynamics ◽  
Photoelectrochemical Characterization ◽  
Doped Zno ◽  
Co Doped

Optoelectronic and photoelectrochemical characterization of Co-doped ZnO nanorods revealing the crucial role of surface defects for enhanced photoresponse.

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