Effect of SWCNT Dilution on the Resistivity of MgB2

2013 ◽  
Vol 1505 ◽  
Author(s):  
Danhao Ma ◽  
Ruwantha Jayasingha ◽  
Dustin Hess ◽  
Kofi W. Adu ◽  
Gamini U. Sumanasekera
Keyword(s):  
Carbon Nanotubes ◽  
Critical Temperature ◽  
Room Temperature ◽  
Magnesium Diboride ◽  
Single Wall Carbon Nanotubes ◽  
Room Temperature Resistivity ◽  
Normal State Resistivity ◽  
Resistivity Ratio ◽  
Sample Composition ◽  
Temperature Resistivity

AbstractWe report an increase in superconducting temperature of magnesium diboride (MgB2) by minute single-wall carbon nanotubes (SWCNT) inclusions. The SWCNTs concentration was varied from 0.1wt% to 1.0wt%. The temperature dependence resistivity of sintered MgB2- SWCNTs composites containing 0.1wt%, 0.5wt% and 1.0wt% were measured and compared with that of the pure MgB2. The superconducting critical temperature (Tc) of the MgB2 increased from 40 K to as high as 42.4 K for the MgB2 containing 0.5wt% of SWCNTs. The room temperature resistivity ratio (RRR) shows dependence on the sample composition. The temperature width (ΔT) decreases with increasing SWCNT content from 0.1wt% to 1.0wt%. The normal state resistivity data were fitted with the generalized Block-Grüneisen function obtaining a Debye temperature of ∼ 900K.

Temperature Dependent Thermopower and Resistance Measurements of CNT-MgB2 Composites

2012 ◽  
Vol 1407 ◽  
Author(s):  
Kofi W. Adu ◽  
Ruwantha Jayasingha ◽  
Danhao Ma ◽  
Gamini U. Sumanasekera
Keyword(s):  
Normal State ◽  
Room Temperature ◽  
Magnesium Diboride ◽  
Single Wall Carbon Nanotubes ◽  
Temperature Dependent ◽  
Temperature Resistance ◽  
Sample Composition ◽  
State Resistance ◽  
Resistance Data ◽  
Mgb2 Composites

ABSTRACTThe temperature dependent resistance R(T) and thermopower S(T) of sintered single wall carbon nanotubes (SWCNT) and magnesium diboride (MgB2) composites containing 5wt%, 10wt%, and 15wt% of SWCNTs have been measured and compared to their pure counterparts. The thermopower of both MgB2 (in the normal state) and SWCNT remain positive over the entire temperature range (10K to 300K) with room temperature values being ∼ 8μV/K and 57μV/K, respectively. The thermopower of the sintered composites decreased with decreasing temperature and switched from positive to negative near 70K. The superconducting critical temperature (Tc) of the samples ranges from 38K-41K. The room-temperature resistance ratio (RRR) is seen to depend on the sample composition. The temperature width (ΔT) is observed to increase with increasing SWCNT concentration. The normal state resistance data were fitted with the generalized Block-Grüneisen function obtaining Debye temperature of ∼ 900K.

The Electrical Resistivity and Specific Heat of NiGa

1997 ◽  
Vol 11 (09n10) ◽  
pp. 407-414 ◽  
Author(s):  
L.-S. Hsu ◽  
Y. D. Yao ◽  
Y. Y. Chen
Keyword(s):  
Electrical Resistivity ◽  
Specific Heat ◽  
Room Temperature ◽  
Residual Resistivity ◽  
Zero Magnetic Field ◽  
Room Temperature Resistivity ◽  
Residual Resistivity Ratio ◽  
Resistivity Ratio ◽  
Heat Measurement ◽  
Temperature Resistivity

The electrical resistivity and specific heat of NiGa were measured between 5 and 296 K and between 1.07 and 300 K, respectively, at zero magnetic field. This compound is metallic as shown from the room-temperature resistivity value (37.4 μΩ cm). The residual resistivity ratio is 1.32, which indicates the defect scattering dominates at low temperatures. The density of states at the Fermi energy and the Debye temperature obtained from the low-temperature specific-heat measurement are 1.48 states/eV formula unit and 202 K, respectively. The former is much higher than the value for NiAl. This observation suggests that the Ni d-band in NiGa is not completely filled.

Influence of Modulation Wavelength Induced Order on the Physical Properties of Nb/Rare Earth Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
L. H. Greene ◽  
W. L. Feldmann ◽  
J. M. Rowell ◽  
B. Batlogg ◽  
R. Hull ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Residual Resistance ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Residual Resistance Ratio ◽  
Temperature Resistivity ◽  
Modulation Wavelength

AbstractWe report the observation of a higher degree of preferred crystalline orientation in Nb/rare earth superlattices for modulation wavelengths in the range of 200 Å to 500 Å than that exhibited by single component films. All films and multilayers are sputter deposited onto room temperature sapphire substrates. Electronic transport measurements also show that the residual resistance ratio is higher and the room temperature resistivity is lower than for multilayers of either greater or lower periodicities. Transmission electron micrographs (TEM) showing excellent layering, grain size comparable to the layer thickness, and evidence of some degree of epitaxy are presented.

scholarly journals Computational Intelligence Approach for Estimating Superconducting Transition Temperature of Disordered MgB2Superconductors Using Room Temperature Resistivity

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Taoreed O. Owolabi ◽  
Kabiru O. Akande ◽  
Sunday O. Olatunji
Keyword(s):  
Transition Temperature ◽  
Superconducting Transition Temperature ◽  
Room Temperature ◽  
Optimization Technique ◽  
Support Vector ◽  
Measuring Instruments ◽  
Room Temperature Resistivity ◽  
Superconducting Transition ◽  
Experimental Values ◽  
Temperature Resistivity

Doping and fabrication conditions bring about disorder in MgB2superconductor and further influence its room temperature resistivity as well as its superconducting transition temperature (TC). Existence of a model that directly estimatesTCof any doped MgB2superconductor from the room temperature resistivity would have immense significance since room temperature resistivity is easily measured using conventional resistivity measuring instrument and the experimental measurement ofTCwastes valuable resources and is confined to low temperature regime. This work develops a model, superconducting transition temperature estimator (STTE), that directly estimatesTCof disordered MgB2superconductors using room temperature resistivity as input to the model. STTE was developed through training and testing support vector regression (SVR) with ten experimental values of room temperature resistivity and their correspondingTCusing the best performance parameters obtained through test-set cross validation optimization technique. The developed STTE was used to estimateTCof different disordered MgB2superconductors and the obtained results show excellent agreement with the reported experimental data. STTE can therefore be incorporated into resistivity measuring instruments for quick and direct estimation ofTCof disordered MgB2superconductors with high degree of accuracy.

Pressure Isotherms of Hydrogen Adsorption in Carbon Nanostructures

2001 ◽  
Vol 706 ◽  
Author(s):  
Xiaohong Chen ◽  
Urszula Dettlaff-Weglikowska ◽  
Miroslav Haluska ◽  
Martin Hulman ◽  
Siegmar Roth ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Activated Carbon ◽  
Hydrogen Storage ◽  
Carbon Nanostructures ◽  
Room Temperature ◽  
Storage Capacity ◽  
Hydrogen Adsorption ◽  
Single Wall Carbon Nanotubes ◽  
Hydrogen Storage Capacity ◽  
Carbon And Graphite

AbstractThe hydrogen adsorption capacity of various carbon nanostructures including single-wall carbon nanotubes, graphitic nanofibers, activated carbon, and graphite has been measured as a function of pressure and temperature. Our results show that at room temperature and a pressure of 80 bar the hydrogen storage capacity is less than 1 wt.% for all samples. Upon cooling, the capacity of hydrogen adsorption increases with decreasing temperature and the highest value was observed to be 2.9 wt. % at 50 bar and 77 K. The correlation between hydrogen storage capacity and specific surface area is discussed.

Preparation of Ni/BaTiO3 Composites and PTC Effect

2007 ◽  
Vol 280-283 ◽  
pp. 341-344
Author(s):  
Xiao Lei Li ◽  
Yuan Fang Qu ◽  
Wei Bing Ma ◽  
Zhan Shen Zheng
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Ptc Effect ◽  
Reducing Atmosphere ◽  
Prepared Composite ◽  
Temperature Resistivity ◽  
Ntc Effect

Ni/BaTiO3 composite was prepared by decomposition of NiC2O4·2H2O/BaTiO3 precursor, which was prepared by precipitating of nickel in the form of oxalate into the BaTiO3 slurry. The composite must be sintered in reducing atmosphere. Otherwise NTC effect would be introduced. The prepared composite almost had no PTC effect. But PTC effect of the Ni/BaTiO3 composite can be effectively renewed by heat-treatment in air. Under a proper composition and method, the composite shows low room-temperature resistivity (ρRT=6.0 Ω·cm) and obvious PTC effect (ρmax/ρmin=102).

Electrical Resistance of Single-Wall Carbon Nanotubes with Determined Chiral Indices

2009 ◽  
Vol 1204 ◽  
Author(s):  
Letian Lin ◽  
Lu-Chang Qin ◽  
Sean Washburn ◽  
Scott Paulson
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
Transmission Electron ◽  
Highly Sensitive

AbstractThe properties of a carbon nanotube (CNT), in particular a single-wall carbon nanotube (SWNT), are highly sensitive to the atomic structure of the nanotube described by its chirality (chiral indices). We have grown isolated SWNTs on a silicon substrate using chemical vapor deposition (CVD) and patterned sub-micron probes using electron beam lithography. The SWNT was exposed by etching the underlying substrate for transmission electron microscope (TEM) imaging and diffraction studies. For each individual SWNT, its electrical resistance was measured by the four-probe method at room temperature and the chiral indices of the same SWNT were determined by nano-beam electron diffraction. The contact resistances were reduced by annealing to typically 3-5 kΩ. We have measured the I-V curve and determined the chiral indices of each nanotube individually from four SWNTs selected randomly – two are metallic and two are semiconducting. We will present the electrical resistances in correlation with the carbon nanotube diameter as well as the band gap calculated from the determined chiral indices for the semiconducting carbon nanotubes. These experimental results are also discussed in connection with theoretical estimations.

The Influence of Sintering Atmosphere and Reoxidation Temperature on the Electrical Properties of the Chip-Type Ba1-xSmxTiO3 Based Ceramics

2014 ◽  
Vol 900 ◽  
pp. 134-137
Author(s):  
Xu Xin Cheng ◽  
Dong Xiang Zhou ◽  
Qi Jun Xiao ◽  
Zhao Xiong Zhao
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Sintering Atmosphere ◽  
Reducing Atmosphere ◽  
Chip Type ◽  
Ptcr Effect ◽  
Temperature Resistivity

The PTCR characteristics of (Ba1-xSmx)TiO3(BSMT) with different donor-doped concentration (x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity (ρRT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of thexvalues, especially whenxis 0.004, the semiconducting BSMT ceramics reoxidized at 850oC for 1 h after sintering at 1300 °C for 30 min in a reducing atmosphere achieve a lower room temperature resisitivity of 82.6 Ωcm. in addition, the doped 0.1 mol% Sm3+BSMT samples fired at 1300 °C for 30 min in air exhibit remarkable PTCR effect with a resistance jumping ratio of 3.4 orders magnitude; moreover, a lower ρRTof the BSMT specimens sintered in a reducing atmosphere is obtained.

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