Temperature Dependent Thermopower and Resistance Measurements of CNT-MgB2 Composites

2012 ◽  
Vol 1407 ◽  
Author(s):  
Kofi W. Adu ◽  
Ruwantha Jayasingha ◽  
Danhao Ma ◽  
Gamini U. Sumanasekera
Keyword(s):  
Normal State ◽  
Room Temperature ◽  
Magnesium Diboride ◽  
Single Wall Carbon Nanotubes ◽  
Temperature Dependent ◽  
Temperature Resistance ◽  
Sample Composition ◽  
State Resistance ◽  
Resistance Data ◽  
Mgb2 Composites

ABSTRACTThe temperature dependent resistance R(T) and thermopower S(T) of sintered single wall carbon nanotubes (SWCNT) and magnesium diboride (MgB2) composites containing 5wt%, 10wt%, and 15wt% of SWCNTs have been measured and compared to their pure counterparts. The thermopower of both MgB2 (in the normal state) and SWCNT remain positive over the entire temperature range (10K to 300K) with room temperature values being ∼ 8μV/K and 57μV/K, respectively. The thermopower of the sintered composites decreased with decreasing temperature and switched from positive to negative near 70K. The superconducting critical temperature (Tc) of the samples ranges from 38K-41K. The room-temperature resistance ratio (RRR) is seen to depend on the sample composition. The temperature width (ΔT) is observed to increase with increasing SWCNT concentration. The normal state resistance data were fitted with the generalized Block-Grüneisen function obtaining Debye temperature of ∼ 900K.

Effect of SWCNT Dilution on the Resistivity of MgB2

2013 ◽  
Vol 1505 ◽  
Author(s):  
Danhao Ma ◽  
Ruwantha Jayasingha ◽  
Dustin Hess ◽  
Kofi W. Adu ◽  
Gamini U. Sumanasekera
Keyword(s):  
Carbon Nanotubes ◽  
Critical Temperature ◽  
Room Temperature ◽  
Magnesium Diboride ◽  
Single Wall Carbon Nanotubes ◽  
Room Temperature Resistivity ◽  
Normal State Resistivity ◽  
Resistivity Ratio ◽  
Sample Composition ◽  
Temperature Resistivity

AbstractWe report an increase in superconducting temperature of magnesium diboride (MgB2) by minute single-wall carbon nanotubes (SWCNT) inclusions. The SWCNTs concentration was varied from 0.1wt% to 1.0wt%. The temperature dependence resistivity of sintered MgB2- SWCNTs composites containing 0.1wt%, 0.5wt% and 1.0wt% were measured and compared with that of the pure MgB2. The superconducting critical temperature (Tc) of the MgB2 increased from 40 K to as high as 42.4 K for the MgB2 containing 0.5wt% of SWCNTs. The room temperature resistivity ratio (RRR) shows dependence on the sample composition. The temperature width (ΔT) decreases with increasing SWCNT content from 0.1wt% to 1.0wt%. The normal state resistivity data were fitted with the generalized Block-Grüneisen function obtaining a Debye temperature of ∼ 900K.

Positron Lifetime Studies of Defect Structures in Bal-xKxBiO3

1990 ◽  
Vol 209 ◽  
Author(s):  
J.C. O'Brien ◽  
R.H. Howell ◽  
H.B. Radousky ◽  
P.A. Sterne ◽  
D.G. Hinks ◽  
...  
Keyword(s):  
Normal State ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Theoretical Calculations ◽  
Defect Structures ◽  
Cryogenic Temperatures ◽  
Aging Effects ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Lifetime Studies

ABSTRACTTemperature-dependent positron lifetime experiments have been performed from room temperature to cryogenic temperatures on Ba1−xKxBiO3. for x=0.4 and 0.5. From the temperature dependence of the positron lifetime in the normal state, we observe a clear signature of competition between separate defect populations to trap the positron. Theoretical calculations of lifetimes of free or trapped positrons have been performed on Ba1−xKxBiO3, to help identify these defects. Lifetime measurements separated by long times have been performed and evidence of aging effects in the sample defect populations is seen in these materials.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Dielectrophoretic Assembly of Gold Nanoparticle Arrays Evaluated in Terms of Room-Temperature Resistance

2020 ◽  
Vol E103.C (2) ◽  
pp. 62-65
Author(s):  
Yoshinao MIZUGAKI ◽  
Makoto MORIBAYASHI ◽  
Tomoki YAGAI ◽  
Masataka MORIYA ◽  
Hiroshi SHIMADA ◽  
...  
Keyword(s):  
Gold Nanoparticle ◽  
Room Temperature ◽  
Nanoparticle Arrays ◽  
Temperature Resistance

Temperature Dependent Line-Shape of the Silicon Dangling Bond EPR-Resonance in Polycrystalline Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
N. H. Nickel ◽  
E. A. Schiff
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Polycrystalline Silicon ◽  
Room Temperature ◽  
Dangling Bond ◽  
Temperature Dependent ◽  
Paramagnetic Resonance ◽  
Temperature Electron ◽  
Motional Narrowing ◽  
G Value ◽  
Electron Paramagnetic

AbstractThe temperature dependence of the silicon dangling-bond resonance in polycrystalline (poly-Si) and amorphous silicon (a-Si:H) was measured. At room temperature, electron paramagnetic resonance (EPR) measurements reveal an isotropie g-value of 2.0055 and a line width of 6.5 and 6.1 G for Si dangling-bonds in a-Si:H and poly-Si, respectively. In both materials spin density and g-value are independent of temperature. While in a-Si:H the width of the resonance did not change with temperature, poly-Si exhibits a remarkable T dependence of ΔHpp. In unpassivated poly-Si a pronounced decrease of ΔHpp is observed for temperatures above 300 K. At 384 K ΔHpp reaches a minimum of 5.1 G, then increases to 6.1 G at 460 K, and eventually decreases to 4.6 G at 530 K. In hydrogenated poly-Si ΔHpp decreases monotonically above 425 K. The decrease of ΔHpp is attributed to electron hopping causing motional narrowing. An average hopping distance of 15 and 17.5 Å was estimated for unhydrogenated and H passivated poly-Si, respectively.

scholarly journals Thermochromic aggregation-induced dual phosphorescence via temperature-dependent sp3-linked donor-acceptor electronic coupling

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tao Wang ◽  
Zhubin Hu ◽  
Xiancheng Nie ◽  
Linkun Huang ◽  
Miao Hui ◽  
...  
Keyword(s):  
Excited State ◽  
Room Temperature ◽  
Electronic Coupling ◽  
Temperature Dependent ◽  
Molecular Systems ◽  
Donor And Acceptor ◽  
Theoretical Investigations ◽  
Donor Acceptor ◽  
And Control ◽  
Two Temperature

AbstractAggregation-induced emission (AIE) has proven to be a viable strategy to achieve highly efficient room temperature phosphorescence (RTP) in bulk by restricting molecular motions. Here, we show that by utilizing triphenylamine (TPA) as an electronic donor that connects to an acceptor via an sp3 linker, six TPA-based AIE-active RTP luminophores were obtained. Distinct dual phosphorescence bands emitting from largely localized donor and acceptor triplet emitting states could be recorded at lowered temperatures; at room temperature, only a merged RTP band is present. Theoretical investigations reveal that the two temperature-dependent phosphorescence bands both originate from local/global minima from the lowest triplet excited state (T1). The reported molecular construct serves as an intermediary case between a fully conjugated donor-acceptor system and a donor/acceptor binary mix, which may provide important clues on the design and control of high-freedom molecular systems with complex excited-state dynamics.

scholarly journals Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aastha Vasdev ◽  
Moinak Dutta ◽  
Shivam Mishra ◽  
Veerpal Kaur ◽  
Harleen Kaur ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Lattice Thermal Conductivity ◽  
Direct Evidence ◽  
Temperature Dependent ◽  
Force Microscopy ◽  
Ferroelectric Domains ◽  
Pdf Analysis ◽  
Ferroelectric Transition Temperature

AbstractA remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te , a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250–300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te . The length scale of the $${\text {Ge}}^{2+}$$ Ge 2 + off-centering is 0.25–0.10 Å near the room temperatures (250–300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in $${\text {Sn}}_{0.7}{\text {Ge}}_{0.3}{\text {Te}}$$ Sn 0.7 Ge 0.3 Te .

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

2021 ◽  
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dft Calculations ◽  
Bond Length ◽  
Dielectric Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Temperature Dependent ◽  
High Dielectric

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

Temperature-induced structural phase transitions in RERhSn (RE = Y, Gd-Tm, Lu)

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Simon Engelbert ◽  
Rolf-Dieter Hoffmann ◽  
Jutta Kösters ◽  
Steffen Klenner ◽  
Rainer Pöttgen
Keyword(s):  
Rare Earth ◽  
Phase Transitions ◽  
Driving Force ◽  
Room Temperature ◽  
Structural Phase ◽  
Structural Phase Transitions ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
X Ray

Abstract The structures of the equiatomic stannides RERhSn with the smaller rare earth elements Y, Gd-Tm and Lu were reinvestigated on the basis of temperature-dependent single crystal X-ray diffraction data. GdRhSn crystallizes with the aristotype ZrNiAl at 293 and 90 K. For RE = Y, Tb, Ho and Er the HP-CeRuSn type (approximant with space group R3m) is already formed at room temperature, while DyRhSn adopts the HP-CeRuSn type below 280 K. TmRhSn and LuRhSn show incommensurate modulated variants with superspace groups P31m(1/3; 1/3; γ) 000 (No. 157.1.23.1) (γ = 3/8 for TmRhSn and γ = 2/5 for LuRhSn). The driving force for superstructure formation (modulation) is a strengthening of Rh–Sn bonding. The modulation is expressed in a 119Sn Mössbauer spectrum of DyRhSn at 78 K through line broadening.

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