Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

2013 ◽  
Vol 1493 ◽  
pp. 189-194 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Thin Layer ◽  
Epitaxial Growth ◽  
Photoluminescence Spectrum ◽  
Lattice Strain ◽  
Lattice Parameter ◽  
Silver Layer ◽  
Full Width ◽  
Half Maximum ◽  
High Quality ◽  
Rocking Curve

ABSTRACTHigh-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

Analysis on 3C-SiC Layer Grown on Pseudomorphic-Si/Si1-xGex/Si(001) Heterostructures

2014 ◽  
Vol 806 ◽  
pp. 21-25 ◽  
Author(s):  
Nicolo’ Piluso ◽  
Massimo Camarda ◽  
Ruggero Anzalone ◽  
Andrea Severino ◽  
Silvia Scalese ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Thin Layer ◽  
Raman Spectra ◽  
Lattice Parameter ◽  
Crystal Quality ◽  
Raman Mode ◽  
Full Width ◽  
Half Maximum ◽  
Raman Characterization

Micro Raman characterization has been used to determine the stress status of 3C-SiC epilayer grown on pseudomorphic-Si thin layer on Si1-xGex/Si(001). The strain conditions of the Si1-xGexfilms grown on Si(001) have been determined by the analysis of additional Silicon Raman peaks, which Raman shifts are related to the lattice parameter. Through the analysis of the Raman spectra, the correlation between the Si1-xGexfilm, the crystal quality and the stress relaxation of the 3C-SiC as a function of the Germanium fraction (x), have been evaluated. The increase of Germanium fraction determines the reduction of the voids density located at the 3C-SiC/Si interface and the relaxation of the stress within the epilayer. Moreover, the 3C-SiC crystal quality, monitored by the Full Width at Half Maximum of the TO Raman mode, remains unchanged for any Germanium fraction values.

Epitaxial Growth of Fe3Si Thin Films on (100) Magnesia Substrates

2007 ◽  
Vol 1032 ◽  
Author(s):  
Kensuke Akiyama ◽  
Satoru Kaneko ◽  
Teiko Kadowaki ◽  
Yasuo Hirabayashi ◽  
Azusa Kyoduka ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Anisotropy Constant ◽  
Epitaxial Films ◽  
Full Width ◽  
Half Maximum ◽  
High Quality ◽  
Rocking Curve ◽  
Continuous Surface ◽  
Long Range Ordering ◽  
Si Films

AbstractA high-quality (100)-oriented epitaxial Fe3Si films were grown on (100) MgO substrates by RF-magnetron sputtering. The full width at half maximum of the Fe3Si 400 rocking curve was 0.18°, when the film was grown at 750°C. The epitaxial films of 100 nm thicknesses had a smooth continuous surface. The coercive field (Hc) was approximately 10 Oe, and the saturation magnetization (Ms) was 900 emu/cm3, which are almost the same as those of bulk Fe3Si. The anisotropy constant (K1) of magnetization indicated that the epitaxial Fe3Si films grown at 750°C mainly consisted of long range ordering phase (DO3 phase) and that the epitaxial films post-annealed at 900°C was constituted with ordering phase.

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

High Resolution X-Ray Diffraction Analysis of Piezoelectric LiNbO3 Films.

1995 ◽  
Vol 401 ◽  
Author(s):  
Yoshihiko Shibata ◽  
Naohiro Kuze ◽  
Masahiro Matsui ◽  
Masaki Kanal ◽  
Tomoji Kawai
Keyword(s):  
Laser Ablation ◽  
High Resolution ◽  
The Other ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates

AbstractThin LINbO3 films are deposited on (001) sapphire and (001) LiTaO3 substrates by using pulsed excimer-laser ablation. These films are evaluated by high-resolution X-ray diffraction (HRXRD) analysis. Strained LiNbO3 films in which the a-axis is longer and the c-axis is shorter than those of LiNbO3 single crystals are deposited on the sapphire substrates. On the other hand, extremely high-quality LiNbO3 films in which the a-axis of the films is the same as that of substrates are grown on the LiTaO substrates. X-ray rocking curves for the (006) reflection showed very narrow full width at half maximum (FWHM) of 208 arcsec for the films on the sapphire substrates, and 9 arcsec for the films on LiTaO3 substrates.

Accuracy and Reproducibility of X-ray Texture Measurements on Thin Films

2002 ◽  
Vol 721 ◽  
Author(s):  
Mark D. Vaudin ◽  
Glen R. Fox ◽  
Glen R. Kowach
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Full Width ◽  
Half Maximum ◽  
Rocking Curve ◽  
X Ray ◽  
Area Detector ◽  
Geometric Factors ◽  
Pt Films

AbstractRocking curve texture measurements were made on thin films of zinc oxide (ZnO) and platinum (Pt) using a powder x-ray diffractometer, and, in the case of ZnO, an area detector. The intensity corrections for defocussing and other geometric factors were made using a technique and associated software (Texture Plus*) developed at NIST. In both thin film systems, the texture was axisymmetric (fiber) and sharp, with full width at half maximum values of about 2.5°. Care was taken in the Pt case to ensure that the linear range of the x-ray detector was used to measure the intensities; for the ZnO data the degree of detector non-linearity was determined, and corrections were applied where necessary. The suitability of the Pt films for thin film texture standards was studied.

Epitaxial Growth of GaN Thin Films Using a Hybrid Pulsed Laser Deposition System

1999 ◽  
Vol 572 ◽  
Author(s):  
Philippe Mérel ◽  
Mohamed Chaker ◽  
Henri Pépin ◽  
Malek Tabbal
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Laser Intensity ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Nitrogen Flux ◽  
High Quality ◽  
Rocking Curve

ABSTRACTA hybrid Pulsed Laser Deposition system was developed to perform epitaxial growth of GaN on sapphire(0001). This system combines the laser ablation of a cooled Ga target with a well-characterized atomic nitrogen source. Taking advantage of the flexibility of this unique deposition system, high quality GaN thin films were deposited by optimizing both the laser intensity and the nitrogen flux. To date, our best GaN films show a FWHM of the GaN(0002) rocking curve peak equal to 480 arcsec. This result has been obtained at a laser intensity of I = 7×107 W/cm2, a substrate temperature of 800°C and under Ga-rich growth conditions.

scholarly journals Effect of Annealing on Innovative CsPbI3-QDs Doped Perovskite Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 101
Author(s):  
Pao-Hsun Huang ◽  
Yu-Hao Chen ◽  
Shui-Yang Lien ◽  
Kuan-Wei Lee ◽  
Na-Fu Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Full Width Half Maximum ◽  
Annealing Temperature ◽  
Full Width ◽  
Half Maximum ◽  
Lead Iodide ◽  
High Quality ◽  
Peak Fitting ◽  
Hot Injection ◽  
Different Temperatures

In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.

Domain structure of epitaxial PbTiO3 films grown on vicinal (001) SrTiO3

1997 ◽  
Vol 12 (5) ◽  
pp. 1297-1305 ◽  
Author(s):  
C. D. Theis ◽  
D. G. Schlom
Keyword(s):  
Diffraction Analysis ◽  
Pulsed Laser Deposition ◽  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray

Epitaxial PbTiO3 films have been grown on vicinal (001) SrTiO3 substrates by pulsed laser deposition. Vicinal SrTiO3 substrates with misorientations up to 9° from (001) were used, and the influence of the direction of misorientation on the resulting domain structure was studied. 4-circle x-ray diffraction analysis indicates that thin (40 nm) PbTiO3 films are completely c-axis oriented [rocking curve full-width-at-half-maximum (FWHM) of 0.25° for the 002 reflection] and that thicker films (∼ 200 nm) contain mixed a-axis and c-axis PbTiO3 domains due to twinning along {011} planes. The [100] axis of the a-axis domains is misoriented by 2.1° to 3.3° toward 〈100〉 substrate directions with respect to the substrate normal. In contrast to growth on well-oriented (001) SrTiO3 surfaces where the four equivalent tilts of the [100] axis of the a-axis domains are equally likely, on vicinal SrTiO3 the a-axis domains are preferentially oriented in an uphill direction with respect to the crystallographic miscut.

Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

1992 ◽  
Vol 275 ◽  
Author(s):  
Koichi Mizuno ◽  
Yo Ichikawa ◽  
Kentaro Setsune
Keyword(s):  
Thin Films ◽  
Oxide Films ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Sputter Deposited

ABSTRACTCrystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

Heteroepitaxial Growth of InP on GaAs with Interface Layer Grown by Flow-Rate Modulation Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. F. Chen ◽  
J. C. Chen ◽  
H.M. Kim ◽  
L. Anthony ◽  
...  
Keyword(s):  
Flow Rate ◽  
Photoluminescence Spectrum ◽  
Interface Layer ◽  
Half Maximum ◽  
Heteroepitaxial Growth ◽  
Rocking Curve ◽  
Step Process ◽  
X Ray ◽  
Rate Modulation

AbstractWe have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full-widths-at-half-maximum of the x-ray rocking curve and the 10-K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

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