Heteroepitaxial Growth of InP on GaAs with Interface Layer Grown by Flow-Rate Modulation Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
W. K. Chen ◽  
J. F. Chen ◽  
J. C. Chen ◽  
H.M. Kim ◽  
L. Anthony ◽  
...  
Keyword(s):  
Flow Rate ◽  
Photoluminescence Spectrum ◽  
Interface Layer ◽  
Half Maximum ◽  
Heteroepitaxial Growth ◽  
Rocking Curve ◽  
Step Process ◽  
X Ray ◽  
Rate Modulation

AbstractWe have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full-widths-at-half-maximum of the x-ray rocking curve and the 10-K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

1992 ◽  
Vol 275 ◽  
Author(s):  
Koichi Mizuno ◽  
Yo Ichikawa ◽  
Kentaro Setsune
Keyword(s):  
Thin Films ◽  
Oxide Films ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Sputter Deposited

ABSTRACTCrystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

High Quality Hydrothermal ZnO Crystals

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Suscavage ◽  
M. Harris ◽  
D. Bliss ◽  
P. Yip ◽  
S.-Q. Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Liquid Helium ◽  
Room Temperature ◽  
Surface Preparation ◽  
Critical Factor ◽  
High Quality ◽  
Rocking Curve ◽  
X Ray ◽  
Oxide Crystals

AbstractZinc Oxide crystals have historically been grown in hydrothermal autoclaves with a basic mineralizer; however, doubts have been raised about the quality of such crystals because they have often exhibited large x-ray rocking curve widths and low photoluminescence (PL) yield with large linewidths. Several ZnO crystals were grown hydrothermally and sliced parallel to the c-plane. This resulted in opposite surfaces (the C+ and C-) exhibiting pronounced chemical and mechanical differences. Different surface treatments were investigated and compared by PL both at room temperature and liquid helium temperatures, and by double axis X-ray rocking curve measurements. The high quality of hydrothermally-grown ZnO is substantiated by the narrow rocking curve widths and sharp PL peaks obtained. A critical factor in obtaining these results was found to be surface preparation.

Effects of Sputtering Pressure on (ZnO)x(InN)1-x Crystal Film Growth at 450°C

2018 ◽  
Vol 941 ◽  
pp. 2093-2098
Author(s):  
Naho Itagaki ◽  
Kazuto Takeuchi ◽  
Nanoka Miyahara ◽  
Kouki Imoto ◽  
Hyun Woong Seo ◽  
...  
Keyword(s):  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Film ◽  
Crystal Films ◽  
Sputtering Pressure

We studied effects of sputtering pressure on growth of (ZnO)x(InN)1-xcrystal films deposited at 450°C by rf magnetron sputtering. Epitaxial growth of (ZnO)x(InN)1-xfilms was realized on single-crystalline ZnO template. X-ray diffraction measurements show that full width at half maximum of the rocking curves from the (101) plane of the films reaches minimum value of 0.11º at 0.5 Pa. The sputtering gas pressure is a key tuning knob for controlling the crystal quality of ZION films.

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Michael Dudley ◽  
Zhou Xu ◽  
James. H. Edgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Mechanism ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Choice

ABSTRACTA systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Accuracy and Reproducibility of X-ray Texture Measurements on Thin Films

2002 ◽  
Vol 721 ◽  
Author(s):  
Mark D. Vaudin ◽  
Glen R. Fox ◽  
Glen R. Kowach
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Full Width ◽  
Half Maximum ◽  
Rocking Curve ◽  
X Ray ◽  
Area Detector ◽  
Geometric Factors ◽  
Pt Films

AbstractRocking curve texture measurements were made on thin films of zinc oxide (ZnO) and platinum (Pt) using a powder x-ray diffractometer, and, in the case of ZnO, an area detector. The intensity corrections for defocussing and other geometric factors were made using a technique and associated software (Texture Plus*) developed at NIST. In both thin film systems, the texture was axisymmetric (fiber) and sharp, with full width at half maximum values of about 2.5°. Care was taken in the Pt case to ensure that the linear range of the x-ray detector was used to measure the intensities; for the ZnO data the degree of detector non-linearity was determined, and corrections were applied where necessary. The suitability of the Pt films for thin film texture standards was studied.

HETEROEPITAXIAL GROWTH AND ANNEALING OF γ-AL2O3 THIN FILMS ON SILICON

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4302-4305 ◽  
Author(s):  
LIWEN TAN ◽  
JUN WANG ◽  
QIYUAN WANG ◽  
YUANHUAN YU ◽  
LANYING LIN
Keyword(s):  
High Frequency ◽  
Chemical Vapor ◽  
High Energy ◽  
Annealing Effect ◽  
High Energy Electron ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Pressure Chemical

The γ- Al 2 O 3 films were grown on Si (100) substrates using the sources of TMA ( Al ( CH 3)3) and O 2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the γ- Al 2 O 3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was γ- Al 2 O 3(100)/ Si (100). The thickness uniformity of γ- Al 2 O 3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000°C in O 2 atmosphere. The high-frequency C-V and leakage current of Al /γ- Al 2 O 3/ Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick γ- Al 2 O 3 film on silicon increases from 17V to 53V.

Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures

2006 ◽  
Vol 955 ◽  
Author(s):  
Jinqiao Xie ◽  
Yi Fu ◽  
Hadis Morkoç
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates ◽  
Control Samples

ABSTRACTGaN layers on sapphire substrates were grown by metalorganic chemical vapor deposition using in situ porous SiNx nano-network. Crystalline quality of epilayers was characterized by X-ray rocking curve scans, and the full width at hall maximum values for (002) and (102) diffractions were improved from 252 arc sec and 405 arc sec, respectively, in control samples to 216 arc sec and 196 arc sec when SiNx was used. Ni/Au Schottky diodes (SDs) were fabricated and the SD performance was found to be critically dependent on the SiNx coverage (fewer and farther the pores the better the results) which is consistent with the trends of XRD and photoluminescence data. A 1.13eV barrier height was achieved when 5min SiNx layer was used compared with 0.78 eV without any SiNx nanonetwork. Furthermore, the breakdown voltage improved from 76 V to 250V when SiNx nanonetwork was used in otherwise identical structures.

Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

2013 ◽  
Vol 1493 ◽  
pp. 189-194 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Thin Layer ◽  
Epitaxial Growth ◽  
Photoluminescence Spectrum ◽  
Lattice Strain ◽  
Lattice Parameter ◽  
Silver Layer ◽  
Full Width ◽  
Half Maximum ◽  
High Quality ◽  
Rocking Curve

ABSTRACTHigh-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

Determination of domain structure and abundance of epitaxial Pb(Zr, Ti)O3 thin films grown on MgO(001) by rf magnetron sputtering

1999 ◽  
Vol 14 (1) ◽  
pp. 132-141 ◽  
Author(s):  
Kyeong Seok Lee ◽  
Young Min Kang ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Rf Magnetron Sputtering ◽  
Curve Analysis ◽  
Crystalline Quality ◽  
Rocking Curve ◽  
X Ray

Epitaxial Pb(ZrxTi1−x)O3 (x = 0.0−0.32) ferroelectric thin films of 500 nm thickness were grown on MgO(001) single crystal substrates by in situ rf magnetron sputtering, and evolution of their domain structures is characterized by employing various x-ray diffraction techniques. X-ray θ-2θ scan showed the films were grown highly c-axis oriented with a tetragonal perovskite structure. 90° domain configuration was investigated using the x-ray rocking curve analysis for PZT 100 peaks in two different Φphi; angles. The rocking curve analysis showed that the degree of c-axis orientation and the crystalline quality of the films were improved continuously with increasing Zr concentration. The c-domain abundance as a function of Zr concentration was quantified using the x-ray rocking curves of PZT 001 and 100, taking account of structural factors and Lorentz-polarization factors. High temperature x-ray technique was also employed to quantify the domain structure as a function of temperature during cooling after reheating the samples to 650 °C. During the cooling process, c-domain abundance was found to increase continuously while the crystalline quality of the films was deteriorated below the Curie temperature. The results led us to conclude that the transformation strain of the film at and below the Curie temperature plays a significant role in the final domain structure and abundance of epitaxial PZT thin films.

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