Electronic transport properties of carbon and boron nitride chain heterojunctions

Yi Zhou; Yifan Li; Jie Li; Jichen Dong; Hui Li

doi:10.1039/c6tc04936b

Electronic transport properties of carbon and boron nitride chain heterojunctions

Journal of Materials Chemistry C ◽

10.1039/c6tc04936b ◽

2017 ◽

Vol 5 (5) ◽

pp. 1165-1178 ◽

Cited By ~ 10

Author(s):

Yi Zhou ◽

Yifan Li ◽

Jie Li ◽

Jichen Dong ◽

Hui Li

Keyword(s):

Boron Nitride ◽

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Free Standing ◽

Electronic Transport Properties ◽

Carbon Chains ◽

On Chip ◽

Transport Channels

Long, stable, and free-standing linear atomic carbon chains and boron nitride (BN) chains have been carved out from their 2D sheets recently [Meyer et al., Nature, 2008, 454(7202), 319; Jin et al. Phys. Rev. Lett., 2009, 102(20), 205501; Cretu et al., ACS Nano, 2014, 8(12), 11950], which could be used as transport channels or on-chip interconnects for field-effect transistors.

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Effect of the orientation of nitro group on the electronic transport properties in single molecular field-effect transistors

Physical Chemistry Chemical Physics ◽

10.1039/c2cp41480e ◽

2013 ◽

Vol 15 (3) ◽

pp. 832-836 ◽

Cited By ~ 6

Author(s):

Yuqing Xu ◽

Bin Cui ◽

Guomin Ji ◽

Dongmei Li ◽

Desheng Liu

Keyword(s):

Transport Properties ◽

Nitro Group ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Molecular Field ◽

Electronic Transport Properties

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Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4861379 ◽

2014 ◽

Vol 32 (1) ◽

pp. 012202 ◽

Cited By ~ 4

Author(s):

Wan Sik Hwang ◽

Kristof Tahy ◽

Pei Zhao ◽

Luke O. Nyakiti ◽

Virginia D. Wheeler ◽

...

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Graphene ◽

Graphene Nanoribbon ◽

Electronic Transport Properties

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ChemInform Abstract: Electronic Transport Properties of Transition Metal Dichalcogenide Field-Effect Devices: Surface and Interface Effects

ChemInform ◽

10.1002/chin.201550238 ◽

2015 ◽

Vol 46 (50) ◽

pp. no-no

Author(s):

Hennrik Schmidt ◽

Francesco Giustiniano ◽

Goki Eda

Keyword(s):

Transition Metal ◽

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Transition Metal Dichalcogenide ◽

Electronic Transport Properties ◽

Surface And Interface ◽

Field Effect Devices ◽

Interface Effects

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Intrinsic electronic transport properties of organic field-effect transitors based on single crystalline tetramethyltetraselenafulvalene

Applied Physics Letters ◽

10.1063/1.1631751 ◽

2003 ◽

Vol 83 (23) ◽

pp. 4782-4784 ◽

Cited By ~ 29

Author(s):

M.-S. Nam ◽

A. Ardavan ◽

R. J. Cava ◽

P. M. Chaikin

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Single Crystalline ◽

Electronic Transport Properties

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Electronic transport properties of carbon chains between Au and Ag electrodes: A first-principles study

Physics Letters A ◽

10.1016/j.physleta.2011.08.032 ◽

2011 ◽

Vol 375 (41) ◽

pp. 3618-3623 ◽

Cited By ~ 19

Author(s):

Changfeng Fang ◽

Bin Cui ◽

Yuqing Xu ◽

Guomin Ji ◽

Desheng Liu ◽

...

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

First Principles ◽

Electronic Transport Properties ◽

First Principles Study ◽

Carbon Chains ◽

Ag Electrodes

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Tunable strain effect and ferroelectric field effect on the electronic transport properties of La0.5Sr0.5CoO3 thin films

Journal of Applied Physics ◽

10.1063/1.4716188 ◽

2012 ◽

Vol 111 (10) ◽

pp. 103702 ◽

Cited By ~ 10

Author(s):

Q. X. Zhu ◽

W. Wang ◽

X. Q. Zhao ◽

X. M. Li ◽

Y. Wang ◽

...

Keyword(s):

Thin Films ◽

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Strain Effect ◽

Electronic Transport Properties

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Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Applied Physics Letters ◽

10.1063/1.4818463 ◽

2013 ◽

Vol 103 (6) ◽

pp. 063109 ◽

Cited By ~ 63

Author(s):

Jiadan Lin ◽

Jianqiang Zhong ◽

Shu Zhong ◽

Hai Li ◽

Hua Zhang ◽

...

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Electronic Transport Properties ◽

Effect Transistor

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Effect of hydrogen annealing on electronic transport properties of quasi-free-standing monolayer graphene

10.7567/ssdm.2013.c-6-5 ◽

2013 ◽

Author(s):

S. Tanabe ◽

M. Takamura ◽

Y. Harada ◽

H. Kageshima ◽

H. Hibino

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Monolayer Graphene ◽

Free Standing ◽

Hydrogen Annealing ◽

Electronic Transport Properties

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Design of boron vacancy enhanced spin filtering graphene/BN zigzag nanoribbon heterojunctions

RSC Advances ◽

10.1039/c6ra27879e ◽

2017 ◽

Vol 7 (12) ◽

pp. 7368-7374 ◽

Cited By ~ 2

Author(s):

Xiaohui Jiang ◽

Dongqing Zou ◽

Bin Cui ◽

Changfeng Fang ◽

Wen Liu ◽

...

Keyword(s):

Boron Nitride ◽

Electric Field ◽

Transport Properties ◽

External Electric Field ◽

Electronic Transport ◽

Graphene Nanoribbons ◽

Electronic Transport Properties ◽

Spin Polarized ◽

Boron Nitride Nanoribbons ◽

Zigzag Graphene Nanoribbons

The spin-polarized electronic transport properties of zigzag graphene nanoribbons (ZGNRs) and boron nitride nanoribbons (ZBNNRs) heterojunctions with a boron vacancy are investigated under an external electric field.

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Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

MRS Proceedings ◽

10.1557/opl.2012.900 ◽

2012 ◽

Vol 1430 ◽

Cited By ~ 1

Author(s):

Hiroaki Yamada ◽

Takeshi Yoshimura ◽

Norifumi Fujimura

Keyword(s):

Hall Effect ◽

Transport Properties ◽

Carrier Concentration ◽

Electronic Transport ◽

Hall Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Hall Effect Measurement ◽

Field Effect Mobility ◽

Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

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