ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM

1999 ◽  
Author(s):  
Kyu-Yong Lee ◽  
Lee-Ju Kim ◽  
Kyung-Han Nam ◽  
Keuntaek Park ◽  
Y. M. Ku ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Dry Etch

scholarly journals Sidewall Slope Control of InP Via Holes for 3D Integration

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 89
Author(s):  
Jongwon Lee ◽  
Kilsun Roh ◽  
Sung-Kyu Lim ◽  
Youngsu Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Sio2 Layer ◽  
Etch Depth ◽  
Rf Power ◽  
3D Integration ◽  
Inductively Coupled ◽  
Wide Range ◽  
Via Holes ◽  
Dry Etch ◽  
Icp Etcher

This is the first demonstration of sidewall slope control of InP via holes with an etch depth of more than 10 μm for 3D integration. The process for the InP via holes utilizes a common SiO2 layer as an InP etch mask and conventional inductively coupled plasma (ICP) etcher operated at room temperature and simple gas mixtures of Cl2/Ar for InP dry etch. Sidewall slope of InP via holes is controlled within the range of 80 to 90 degrees by changing the ICP power in the ICP etcher and adopting a dry-etched SiO2 layer with a sidewall slope of 70 degrees. Furthermore, the sidewall slope control of the InP via holes in a wide range of 36 to 69 degrees is possible by changing the RF power in the etcher and introducing a wet-etched SiO2 layer with a small sidewall slope of 2 degrees; this wide slope control is due to the change of InP-to-SiO2 selectivity with RF power.

Post Annealing Etch Process for Improved Reverse Characteristics of 4H-SiC Diode

2009 ◽  
Vol 615-617 ◽  
pp. 663-666
Author(s):  
In Ho Kang ◽  
Wook Bahng ◽  
Sung Jae Joo ◽  
Sang Cheol Kim ◽  
Nam Kyun Kim
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Annealing Process ◽  
Activation Process ◽  
Electrical Characteristics ◽  
Inductively Coupled ◽  
Edge Termination ◽  
Post Annealing ◽  
Surface Damages ◽  
Dry Etch

The effects of post annealing etch process on electrical performances of a 4H-SiC Schottky diodes without any edge termination were investigated. The post etch was carried out using various dry the dry etch techniques such as Inductively Coupled Plasma (ICP) and Neutral Beam Etch (NBE) in order to eliminate suspicious surface damages occurring during a high temperature ion activation process. The leakage current of diodes treated by NBE measured at -100V was about one order lower than that of diode without post etch and a half times lower than that of diode treated by ICP without a significant degradation of forward electrical characteristics. Based on the above results, the post annealing process was adapted to a junction barrier Schottky diode with a field limiting ring. The blocking voltages of diode without post annealing etch and diodes treated by ICP and NBE were -1038V, -1125V, and -1595V, respectively.

Investigating GaSb(001) Dry Etching by ICP-RIE on a non-Silicon Containing Sample Holder with no Organic Gases

2012 ◽  
Vol 1396 ◽  
Author(s):  
Hamad A. Albrithen ◽  
Gale S. Petrich ◽  
Leslie A. Kolodziejski ◽  
Abdelmajid Salhi ◽  
Abdulrahman A. Almuhanna
Keyword(s):  
Inductively Coupled Plasma ◽  
Silicon Oxide ◽  
Etching Rate ◽  
Sample Holder ◽  
Inductively Coupled ◽  
Solid Films ◽  
Mask Layer ◽  
Organic Gases ◽  
Dry Etch ◽  
Anisotropic Etch

ABSTRACTWe report the dry etch of GaSb(001) by inductively coupled plasma reactive ion etcher. Silicon Oxide, deposited by PECVD, was used as a mask. The oxide layer proved to be almost unaffected compared to the GaSb, when using chlorine compound gases as etchants (Cl2, BCl3, and SiCl4) as well as argon. This provides high selectivity for GaSb to the mask layer. The sample holder has no silicon that may contribute to the etching process. Etching using Cl2 + Ar showed increase in the etching rate as the chlorine ratio increases; however, the process led to grassy surface and chemical like reaction. The use of SiCl4+Cl2+Ar mixture with low chlorine ratio resulted in anisotropic etch with smooth sides. It has been found for this case that the increase of the chlorine ratio led to an increased etching rate as well. The repeat of previously reported result by Swaminathan et al. [Thin Solid Films 516 (2008) 8712.] yet with a sample holder not having silicon, proved the effect of Si-contribution in producing vertical profile etch with smooth surfaces.

Dry etch damage in inductively coupled plasma exposed GaAs/AlGaAs heterojunction bipolar transistors

1997 ◽  
Vol 70 (18) ◽  
pp. 2410-2412 ◽  
Author(s):  
F. Ren ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
C. Constantine ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Bipolar Transistors ◽  
Inductively Coupled ◽  
Dry Etch

scholarly journals Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

2021 ◽  
Vol 59 (2) ◽  
pp. 121-126
Author(s):  
Ji Hun Um ◽  
Byoung Su Choi ◽  
Woo Sik Jang ◽  
Sungu Hwang ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Smooth Surface ◽  
Vertical Sidewall ◽  
Source Power ◽  
Inductively Coupled ◽  
Process Pressure ◽  
Coupled Plasmas ◽  
Dry Etch

α-Ga2O3 has the largest bandgap (~5.3 eV) among the five polymorphs of Ga2O3 and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and low ion-induced damage. Here, the etch characteristics of α-Ga2O3 epitaxy film were examined in two fluorine-based (CF4/Ar and SF6/Ar) inductively coupled plasmas. Under the same source power, rf chuck power and process pressure, an Ar-rich composition of CF4/Ar and an SF6-rich composition of SF6/Ar produced the highest etch rates. Monotonic increase in the etch rate was observed as the source power and rf chuck power increased in the 2CF4/13Ar discharges, and a maximum etch rate of ~855 Å/min was obtained at a 500 W source power, 250 W rf chuck power, and 2 mTorr pressure. A smooth surface morphology with normalized roughness of less than ~1.38 was achieved in the 2CF4/13Ar and 13SF6/2Ar discharges under most of the conditions examined. The features etched into the α-Ga2O3 layer using a 2CF4/13Ar discharge with 2 mTorr pressure showed good anisotropy with a vertical sidewall profile.

Dry Etch Properties of ZTO Thin Films Using Inductively Coupled Plasma

2013 ◽  
Vol 454 (1) ◽  
pp. 99-109
Author(s):  
Han-Soo Kim ◽  
Jong-Chang Woo ◽  
Young-Hee Joo ◽  
Chang-Il Kim
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Dry Etch
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