Combining X-Ray Diffraction and Substrate Deflection Analysis to Understand Internal Stress in Electroless Copper Films

2012 ◽  
Vol 1529 ◽  
Author(s):  
Tanu Sharma ◽  
Ralf Brüning ◽  
Delilah A. Brown ◽  
Simon Bamberg ◽  
Michael Merschky ◽  
...  
Keyword(s):  
Internal Stress ◽  
Printed Circuit Boards ◽  
Film Surface ◽  
Local Stress ◽  
Conducting Layer ◽  
Copper Films ◽  
X Ray Diffraction ◽  
Plating Bath ◽  
X Ray ◽  
Electroless Copper

ABSTRACTElectroless copper films are usually the first conducting layer on the insulating substrates of printed circuit boards. For this and other emerging applications, the internal stress of the copper layer is an important consideration both for film adhesion and film-substrate interaction. We have combined stress/strain analysis based on X-ray diffraction, which is sensitive to the strain of the copper crystallites, with a conventionally used technique that analyses the bending of the substrate (Deposit Stress Analyzer). Both techniques were implemented in such a way that the stress could be monitored continuously during the deposition of the films from the electroless plating bath as well as afterwards. These tests were carried out for three chemical formulations and the results from both techniques agree qualitatively. For one bath, the substrate bending method detects a 60 nm region of local stress at the film-surface interface.

Stress and Strain Evolution in Electroless Copper Films Evaluated with X-ray Diffraction and Substrate Curvature

2013 ◽  
Vol 160 (6) ◽  
pp. D226-D232 ◽  
Author(s):  
Tanu Sharma ◽  
Ralf Brüning ◽  
Colby Brown ◽  
Allison Sibley ◽  
Johannes Etzkorn ◽  
...  
Keyword(s):  
Stress And Strain ◽  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strain Evolution ◽  
Electroless Copper ◽  
Substrate Curvature

Strain in electroless copper films monitored by X-ray diffraction during and after deposition and its dependence on bath chemistry

2011 ◽  
Vol 519 (13) ◽  
pp. 4377-4383 ◽  
Author(s):  
Ralf Brüning ◽  
Bruce Muir ◽  
Eric McCalla ◽  
Émilie Lempereur ◽  
Frank Brüning ◽  
...  
Keyword(s):  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electroless Copper

Strain in Electroless Copper Films: Analysis by in situ X-Ray Diffraction and Curvature Methods

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 001358-001388
Author(s):  
Simon Bamberg ◽  
Tobias Bernhard (corresponding author) ◽  
Laurence J. Gregoriades (presenting author) ◽  
Frank Brüning ◽  
Ralf Brüning ◽  
...  
Keyword(s):  
Tensile Stress ◽  
Copper Film ◽  
Film Stress ◽  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Wide Range ◽  
Electroless Copper ◽  
The Difference

Strain in chemically deposited copper films on polymer substrates was determined by means of in situ X-ray diffraction (XRD), deposit stress analyzer (DSA) and spiral contractometer (SC). The strain evolution of the films was studied as a function of copper film thickness and electroless copper bath parameters, during and after deposition. The results are not indicative of a preferred crystallite orientation or texturing in the deposit. The copper film stress is controllable over a wide range of some 100 MPa from compressive to tensile stress by appropriate variation of bath parameters (e.g. temperature, concentration of bath components such as nickel, stabilizer and formaldehyde). A higher tendency of blister generation for relaxed or compressively stressed films is apparent, which implies that a sufficient level of tensile stress throughout the deposition promotes film adhesion. An observable change from tensile to compressive film stress during the cooling of the sample from bath operation to rinse water temperature is discussed in terms of substrate-induced thermal stress to the copper film. In this context, the difference in the substrate materials required for XRD (polymer), DSA (copper) and SC (stainless steel) may be a significant factor contributing to the diverging measured stress behaviors of the methods. Moreover, it is questionable whether SC stress data can be compared with XRD and DSA stress data, due to the low resolution of the SC method (~60 MPa).

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Determination of internal stress in soldered joints with Sn-based alloys by X-ray diffraction

2021 ◽  
Author(s):  
Cosmin Codrean ◽  
Dragoş Buzdugan ◽  
Viorel-Aurel Şerban ◽  
Mircea Vodă
Keyword(s):  
Internal Stress ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

The Microstructure and Electrical Property of Porous Cu Film on Soft PVDF Substrate

2012 ◽  
Vol 472-475 ◽  
pp. 1451-1454
Author(s):  
Xue Hui Wang ◽  
Wu Tang ◽  
Ji Jun Yang
Keyword(s):  
Electrical Properties ◽  
Film Surface ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Cu Films ◽  
Cu Film ◽  
Diffraction Peaks ◽  
Sputtering Pressure ◽  
Effect Method

The porous Cu film was deposited on soft PVDF substrate by magnetron sputtering at different sputtering pressure. The microstructure and electrical properties of Cu films were investigated as a function of sputtering pressure by X-ray diffraction XRD and Hall effect method. The results show that the surface morphology of Cu film is porous, and the XRD revealed that there are Cu diffraction peaks with highly textured having a Cu-(220) or a mixture of Cu-(111) and Cu-(220) at sputtering pressure 0.5 Pa. The electrical properties are also severely influenced by sputtering pressure, the resistivity of the porous Cu film is much larger than that fabricated on Si substrate. Furthermore, the resistivity increases simultaneously with the increasing of Cu film surface aperture, but the resistivity of Cu film still decreases with the increasing grain size. It can be concluded that the crystal structure is still the most important factor for the porous Cu film resistivity.

scholarly journals Effect of glyphosate on X-ray diffraction of copper films prepared by electrochemical deposition

RSC Advances ◽  
2019 ◽  
Vol 9 (25) ◽  
pp. 14016-14023 ◽  
Author(s):  
Gaomin Zhang ◽  
Bin Xu ◽  
Hui Chong ◽  
Wenxian Wei ◽  
Chengyin Wang ◽  
...  
Keyword(s):  
Electrochemical Deposition ◽  
Copper Films ◽  
X Ray Diffraction ◽  
X Ray

Quantitative probing of glyphosate by combining electrochemical deposition and X-ray diffraction methods.

Structure refinement and crystal chemistry of tokkoite and tinaksite from the Murun massif (Russia)

2017 ◽  
Vol 81 (2) ◽  
pp. 251-272 ◽  
Author(s):  
M. Lacalamita ◽  
E. Mesto ◽  
E. Kaneva ◽  
F. Scordari ◽  
G. Pedrazzi ◽  
...  
Keyword(s):  
Exchange Reaction ◽  
Diffraction Data ◽  
Structure Refinement ◽  
Local Stress ◽  
Geometrical Parameters ◽  
X Ray Diffraction ◽  
Triclinic Space Group ◽  
X Ray ◽  
Lattice Constants ◽  
Mössbauer Analysis

AbstractThe structures of tokkoite, K2Ca4[Si7O18OH](OH,F) and tinaksite, K2Ca2NaTi[Si7O18OH]O from the Murun massif (Russia) were refined from single-crystal X-ray diffraction data in the triclinic space group P1̄. Average crystallographic data are a ≈ 10.423, b ≈ 12.477, c ≈ 7.112 Å, α ≈ 89.92°, β ≈ 99.68°, γ ≈ 92.97°, V ≈ 910.5 Å3 for tokkoite; a ≈ 10.373, b ≈ 12.176, c ≈ 7.057 Å, α ≈ 90.82°, β ≈ 99.22°, γ ≈ 92.80°, V ≈ 878.5 Å3 for tinaksite. The substantial similarities between the geometrical parameters of the tokkoite and tinaksite structures led us to conclude that the two minerals are isostructural. However, major differences of tokkoite with respect to tinaksite are larger lattice constants, especially concerning the b parameter, longer <M–O> distances, especially <M1–O>; larger values of the M1–M3 and O20–O2 bond lengths, and a stronger distortion of the M1 polyhedron. Mössbauer analysis showed that significant trivalent iron is present, VIFe3+ 40.0(7)% in tokkoite and 12.8(3)% in tinaksite. It is confirmed that 2Ca(M1+M2)2+ + (F,OH)(O20)–↔ Ti(M1)4+ + Na(M2)+ + O(O20)– is the exchange reaction that describes the relation between tokkoite and tinaksite. In addition, this exchange reaction causes local stress involving mainly the M1 site and its interaction with the M2 and M3 sites.

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