Hydrostatic pressure effects onto the electronic structure and differential capacitance profile for a metal/δ-doped-GaAs.

2012 ◽  
Vol 1479 ◽  
pp. 139-143
Author(s):  
A. Puga ◽  
J. C. Martínez-Orozco
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Effective Mass ◽  
Energy Levels ◽  
Differential Capacitance ◽  
Pressure Effects ◽  
Mass Approximation ◽  
Linear Behavior ◽  
Experimental Expression ◽  
Semiconductor Contact

ABSTRACTA metal-semiconductor contact with a n-type δ-doped quantum well of impurities (metal/δ-doped GaAs) was studied numerically to extract electronic properties such as energy levels and the corresponding wave functions of each level as well as the differential capacitance for the structure. In this work we reported these properties as a function of the hydrostatic pressure (p). We used the effective mass approximation for the calculation of the electronic structure and consider the hydrostatic pressure effects on the basic semiconductor parameters as is the effective mass for the conduction electrons and the static dielectric constant, finally we also take into account an experimental expression that dependency of the Schottky barrier height as a function of this external factor, at least for values between 0 and 6 kar. We showed that the linear behavior for C−2, obtained by pervious works, is switched over a parabolic-like curve due to the δ-doped two-dimensional impurities density.

scholarly journals Electronic structure and magnetic properties of RT4Al8(R = Sc, Y, La, Lu; T = Fe, Mn, Cr) compounds. Hydrostatic pressure effects

2016 ◽  
Vol 42 (6) ◽  
pp. 458-465 ◽  
Author(s):  
I. P. Zhuravleva ◽  
G. E. Grechnev ◽  
A. S. Panfilov ◽  
A. A. Lyogenkaya ◽  
O. V. Kotlyar ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Pressure Effects

scholarly journals Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Guangxin Wang ◽  
Xiuzhi Duan ◽  
Wei Chen
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Effective Mass ◽  
Dielectric Constants ◽  
Pressure Effects ◽  
Physical Parameters ◽  
Barrier Thickness ◽  
Hydrogenic Impurity ◽  
Donor Binding Energy

Within the framework of the effective mass approximation, barrier thickness and hydrostatic pressure effects on the ground-state binding energy of hydrogenic impurity are investigated in wurtzite (WZ) GaN/AlxGa1−xN strained quantum dots (QDs) by means of a variational approach. The hydrostatic pressure dependence of physical parameters such as electron effective mass, energy band gaps, lattice constants, and dielectric constants is considered in the calculations. Numerical results show that the donor binding energy for any impurity position increases when the hydrostatic pressure increases. The donor binding energy for the impurity located at the central of the QD increases firstly and then begins to drop quickly with the decrease of QD radius (height) in strong built-in electric fields. Moreover, the influence of barrier thickness along the QD growth direction and Al concentration on donor binding energy is also investigated. In addition, we also found that impurity positions have great influence on the donor binding energy.

Finite Element Method With Linear Rectangular Element for Solving Nanoscale InAs⁄GaAs Quantum Ring Structures

2018 ◽  
pp. 347
Author(s):  
Eman ali Hussain ◽  
Jamil A. Al-Hawasy ◽  
Lamyaa H. Ali
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Effective Mass ◽  
Piecewise Linear ◽  
Energy Levels ◽  
Electronic States ◽  
Piecewise Linear Function ◽  
Quantum Ring ◽  
Mass Approximation ◽  
The One

        This paper is concerned with the solution of the nanoscale structures consisting of the   with an effective mass envelope function theory, the electronic states of the  quantum ring are studied.  In calculations, the effects due to the different effective masses of electrons in and out the rings are included. The energy levels of the electron are calculated in the different shapes of rings, i.e., that the inner radius of rings sensitively change the electronic states. The energy levels of the electron are not sensitively dependent on the outer radius for large rings. The structures of  quantum rings are studied by the one electronic band Hamiltonian effective mass approximation, the energy- and position-dependent on electron effective mass approximation, and the spin-dependent on the Ben Daniel-Duke boundary conditions. In the description of the Hamiltonian matrix elements, the Finite elements method with different base piecewise linear function is adopted. The non-linear energy confinement problem is solved approximately by using the Finite elements method with piecewise  linear function, to calculate the energy of the one electron states for the   quantum ring. The results of numerical example are compared for accuracy and efficiency with the finite element method of linear triangular element. This comparison shows that good results of numerical example.  

INFLUENCE OF PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF HYDROGENIC DONOR IN SOME LOW-LYING EXCITED STATES IN A QUANTUM WELL

2007 ◽  
Vol 06 (01) ◽  
pp. 37-40 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Effective Mass ◽  
Excited States ◽  
Diamagnetic Susceptibility ◽  
Mass Approximation ◽  
X Band ◽  
Hydrogenic Donor ◽  
Band Mixing ◽  
Band Crossing

The influence of Γ–X band crossing due to the applied hydrostatic pressure on the diamagnetic susceptibility (χ dia ) of a donor in low-lying excited states like 2s, 2p0, 2p± in a GaAs / Al x Ga 1-x As Quantum Well has been investigated in the effective mass approximation by considering the nonparabolicity of the conduction band. We notice that the effect of Γ–X band mixing is significant on χ dia of a donor lying in excited states. Moreover, the effect of non-parabolicity on χ dia is also predominant for lower well width region. The results are presented and discussed.

DONOR AND ACCEPTOR STATES IN GaAs-(Ga, Al)As QUANTUM DOTS: EFFECTS OF HYDROSTATIC PRESSURE AND AN INTENSE LASER

2010 ◽  
Vol 24 (29) ◽  
pp. 5761-5770 ◽  
Author(s):  
A. MIGUEZ ◽  
R. FRANCO ◽  
J. SILVA-VALENCIA
Keyword(s):  
Quantum Dots ◽  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Laser Field ◽  
Binding Energies ◽  
Field Amplitude ◽  
Pressure Effects ◽  
Intense Laser ◽  
Mass Approximation ◽  
Donor And Acceptor

We calculated the binding energies of shallow donors and acceptors in a spherical GaAs - Ga 1-x Al x As quantum dot under the combined effect of isotropic hydrostatic pressure and an intense laser. We used a variational approach within the effective mass approximation. The binding energy was computed as a function of hydrostatic pressure, dot sizes and laser field amplitude. The results showed that the impurity binding energy increases with pressure and decreases with the laser field amplitude when other parameters are fixed. We also found that the pressure effects are more dramatic for donor than acceptor impurities, especially for quantum dots with small radii.

THE EFFECTS OF TEMPERATURE AND HYDROSTATIC PRESSURE ON THE DIAMAGNETIC SUSCEPTIBILITY OF A DONOR IN A QUANTUM WELL

2011 ◽  
Vol 18 (05) ◽  
pp. 147-152 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Effective Mass ◽  
Diamagnetic Susceptibility ◽  
Effective Mass Approximation ◽  
Mass Approximation ◽  
Hydrogenic Donor ◽  
Different Temperatures ◽  
Effects Of Temperature

Using the effective-mass approximation within a variational scheme, we have calculated the diamagnetic susceptibility and binding energy of a hydrogenic donor in a quantum well under different temperatures and hydrostatic pressure conditions. Our calculation have revealed the dependence of the diamagnetic susceptibility and the impurity binding on temperature and hydrostatic pressure.

scholarly journals Finite Element Method Linear Triangular Element for Solving Nanoscale InAs⁄GaAs Quantum Ring Structures

2019 ◽  
Vol 30 (2) ◽  
pp. 19
Author(s):  
Eman Ali Hussain ◽  
Jamil A. Al-Hawasy ◽  
Lamyaa Hussein Ali
Keyword(s):  
Finite Elements ◽  
Effective Mass ◽  
Energy Levels ◽  
Electronic States ◽  
Finite Elements Method ◽  
Effective Mass Approximation ◽  
Triangular Element ◽  
Quantum Ring ◽  
Electronic Band ◽  
Mass Approximation

This paper concerned with the solution of the nanoscale structures consisting of the   with an effective mass envelope function theory, the electronic states of the  quantum ring are studied.  In calculations, the effects due to the different effective masses of electrons in and out the rings are included. The energy levels of the electron are calculated in the different shapes of rings, i.e., that the inner radius of rings sensitively change the electronic states. The energy levels of the electron are not sensitively dependent on the outer radius for large rings. The structures of  quantum rings are studied by the one electronic band Hamiltonian effective mass approximation, the energy- and position-dependent on electron effective mass approximation, and the spin-dependent on the Ben Daniel-Duke boundary conditions. In the description of the Hamiltonian matrix elements, the Finite elements method with different base linear triangular element is adopted. The non-linear energy confinement problem is solved approximately by using the Finite elements method with  linear triangular element, to calculate the energy of the electron states for the   quantum ring.

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