scholarly journals Electronic structure and magnetic properties of RT4Al8(R = Sc, Y, La, Lu; T = Fe, Mn, Cr) compounds. Hydrostatic pressure effects

2016 ◽  
Vol 42 (6) ◽  
pp. 458-465 ◽  
Author(s):  
I. P. Zhuravleva ◽  
G. E. Grechnev ◽  
A. S. Panfilov ◽  
A. A. Lyogenkaya ◽  
O. V. Kotlyar ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Pressure Effects

Pressure effects on magnetic properties and electronic structure of EuB6 and GdB6

2012 ◽  
Vol 511 (1) ◽  
pp. 5-8 ◽  
Author(s):  
G.E. Grechnev ◽  
A.V. Logosha ◽  
A.S. Panfilov ◽  
N.Yu. Shitsevalova
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Pressure Effects

Hydrostatic pressure effects onto the electronic structure and differential capacitance profile for a metal/δ-doped-GaAs.

2012 ◽  
Vol 1479 ◽  
pp. 139-143
Author(s):  
A. Puga ◽  
J. C. Martínez-Orozco
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Effective Mass ◽  
Energy Levels ◽  
Differential Capacitance ◽  
Pressure Effects ◽  
Mass Approximation ◽  
Linear Behavior ◽  
Experimental Expression ◽  
Semiconductor Contact

ABSTRACTA metal-semiconductor contact with a n-type δ-doped quantum well of impurities (metal/δ-doped GaAs) was studied numerically to extract electronic properties such as energy levels and the corresponding wave functions of each level as well as the differential capacitance for the structure. In this work we reported these properties as a function of the hydrostatic pressure (p). We used the effective mass approximation for the calculation of the electronic structure and consider the hydrostatic pressure effects on the basic semiconductor parameters as is the effective mass for the conduction electrons and the static dielectric constant, finally we also take into account an experimental expression that dependency of the Schottky barrier height as a function of this external factor, at least for values between 0 and 6 kar. We showed that the linear behavior for C−2, obtained by pervious works, is switched over a parabolic-like curve due to the δ-doped two-dimensional impurities density.

Pressure Effects on Magnetic Properties and Electronic Structure of GdIn3-xSnx Alloys

2004 ◽  
Vol 54 (S4) ◽  
pp. 351-354 ◽  
Author(s):  
A.E. Baranovskiy ◽  
G.E. Grechnev ◽  
A.S. Panfilov ◽  
I.V. Svechkarev ◽  
A. Hackemer ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Pressure Effects

ALLOYING AND PRESSURE EFFECTS ON THE MAGNETIC PROPERTIES OF CeNi

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-719-C8-720
Author(s):  
D. Gignoux ◽  
J. C. Gomez Sal ◽  
J. Rodriguez Fernandez ◽  
J. Voiron
Keyword(s):  
Magnetic Properties ◽  
Pressure Effects

Biaxial strain, electric field and interlayer distance-tailored electronic structure and magnetic properties of two-dimensional g-C3N4/Li-adsorbed Cr2Ge2Te6 van der Waals heterostructures

2021 ◽  
Vol 23 (10) ◽  
pp. 6171-6181
Author(s):  
Yaoqi Gao ◽  
Baozeng Zhou ◽  
Xiaocha Wang
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Electric Field ◽  
Van Der Waals ◽  
Interlayer Distance ◽  
Two Dimensional ◽  
Biaxial Strain ◽  
Van Der Waals Heterostructures

It is found that the biaxial strain, electric field and interlayer distance can effectively modulate the electronic structure and magnetic properties of two-dimensional van der Waals heterostructures.

Sign in / Sign up

Export Citation Format

Share Document