Electronic structure computation and differential capacitance profile in δ-doped FET as a function of hydrostatic pressure

2014 ◽  
Author(s):  
C. Carlos-Pinedo ◽  
I. Rodríguez-Vargas ◽  
J. C. Martínez-Orozco
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Differential Capacitance

Hydrostatic pressure effects onto the electronic structure and differential capacitance profile for a metal/δ-doped-GaAs.

2012 ◽  
Vol 1479 ◽  
pp. 139-143
Author(s):  
A. Puga ◽  
J. C. Martínez-Orozco
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Effective Mass ◽  
Energy Levels ◽  
Differential Capacitance ◽  
Pressure Effects ◽  
Mass Approximation ◽  
Linear Behavior ◽  
Experimental Expression ◽  
Semiconductor Contact

ABSTRACTA metal-semiconductor contact with a n-type δ-doped quantum well of impurities (metal/δ-doped GaAs) was studied numerically to extract electronic properties such as energy levels and the corresponding wave functions of each level as well as the differential capacitance for the structure. In this work we reported these properties as a function of the hydrostatic pressure (p). We used the effective mass approximation for the calculation of the electronic structure and consider the hydrostatic pressure effects on the basic semiconductor parameters as is the effective mass for the conduction electrons and the static dielectric constant, finally we also take into account an experimental expression that dependency of the Schottky barrier height as a function of this external factor, at least for values between 0 and 6 kar. We showed that the linear behavior for C−2, obtained by pervious works, is switched over a parabolic-like curve due to the δ-doped two-dimensional impurities density.

scholarly journals Electronic structure and magnetic properties of RT4Al8(R = Sc, Y, La, Lu; T = Fe, Mn, Cr) compounds. Hydrostatic pressure effects

2016 ◽  
Vol 42 (6) ◽  
pp. 458-465 ◽  
Author(s):  
I. P. Zhuravleva ◽  
G. E. Grechnev ◽  
A. S. Panfilov ◽  
A. A. Lyogenkaya ◽  
O. V. Kotlyar ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Pressure Effects

scholarly journals Effect of hydrostatic pressure and uniaxial strain on the electronic structure ofPb1−xSnxTe

2015 ◽  
Vol 92 (23) ◽  
Author(s):  
Matthias Geilhufe ◽  
Sanjeev K. Nayak ◽  
Stefan Thomas ◽  
Markus Däne ◽  
Gouri S. Tripathi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Uniaxial Strain ◽  
Effect Of Hydrostatic Pressure

Electronic structure of graphite: Effect of hydrostatic pressure

1995 ◽  
Vol 51 (8) ◽  
pp. 4813-4819 ◽  
Author(s):  
R. Ahuja ◽  
S. Auluck ◽  
J. Trygg ◽  
J. M. Wills ◽  
O. Eriksson ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Effect Of Hydrostatic Pressure

Electronic structure of wurtzite and rocksalt InN investigated by optical absorption under hydrostatic pressure

2010 ◽  
Vol 96 (20) ◽  
pp. 201903 ◽  
Author(s):  
J. Ibáñez ◽  
A. Segura ◽  
F. J. Manjón ◽  
L. Artús ◽  
T. Yamaguchi ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Hydrostatic Pressure ◽  
Optical Absorption
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