Analysis of Electron Traps in a-IGZO Thin Films after High Pressure Vapor Annealing by Capacitance–Voltage Method

2012 ◽  
Vol 1436 ◽  
Author(s):  
Yoshihiro Ueoka ◽  
Mami Fujii ◽  
Haruka Yamazaki ◽  
Masahiro Horita ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Pressure ◽  
Electron Trap ◽  
Trap Density ◽  
The Other ◽  
Density Of State ◽  
Vapor Annealing ◽  
Capacitance Voltage ◽  
Pressure Water

ABSTRACTEffect of high-pressure water vapor (HPV) annealing is discussed from density of state (DOS) by capacitance–voltage (C–V) method and ΔVFB by the cyclic C–V measurement. The DOS of HPV samples were smaller than that of conventional atmosphere (AT) annealing around conduction band minimum (Ec). The ΔVFB of HPV samples were also smaller than that of AT. This suggests that HPV annealing is an effective method to decrease electron trap density as compared with AT condition. Especially, HPV 0.5 MPa sample was lower electron trap density and more stable than the other pressure HPV samples. Therefore, it is considered that the HPV in 0.5 MPa is the most promising condition. In addition, we succeeded in demonstrating the analysis of trap density in thin film by C–V method and cyclic C–V measurement.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

High-pressure water vapor treatment for poly-crystalline germanium thin films

2012 ◽  
Vol 358 (17) ◽  
pp. 2107-2109 ◽  
Author(s):  
Takeru Sagisaka ◽  
Takahiro Takatsu ◽  
Masao Isomura
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Water Vapor ◽  
Pressure Water ◽  
Vapor Treatment ◽  
Crystalline Germanium

Synthesis and photoluminescence properties of silicon nanowires treated by high-pressure water vapor annealing

2007 ◽  
Vol 204 (5) ◽  
pp. 1302-1306 ◽  
Author(s):  
B. Salhi ◽  
B. Gelloz ◽  
N. Koshida ◽  
G. Patriarche ◽  
R. Boukherroub
Keyword(s):  
High Pressure ◽  
Water Vapor ◽  
Silicon Nanowires ◽  
Photoluminescence Properties ◽  
Vapor Annealing ◽  
Pressure Water
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