ZnO Nanostructured Diodes: The Influence of Synthesis Conditions and p-type Material on Device Performance

2012 ◽  
Vol 1439 ◽  
pp. 95-100
Author(s):  
S.M. Hatch ◽  
S. Dunn
Keyword(s):  
Zno Nanorods ◽  
Type Material ◽  
Device Performance ◽  
Processing Conditions ◽  
Synthesis Conditions ◽  
Hybrid Device ◽  
Turn On ◽  
Type Layer ◽  
Hybrid Devices ◽  
P Type

ABSTRACTWe produce four distinct ZnO nanorod diode structures that are based on ZnO nanorods produced at pH 6 and pH 11 and have the p-type material PEDOT:PSS (hybrid device) or CuSCN (all inorganic device). After testing the performance of the diodes we show a rectification of 1050 at ±1V in the dark for the inorganic device. The device also exhibits good UV photodetection showing a rapid ca0.1ms turn on and off to a source of illumination. The hybrid devices performed as previously reported with a rectification of 25 at ±1V in both dark and under illumination. We ascribe the performance of the devices to the differences in morphology in the ZnO brought about by the processing conditions and the way in which the p-type layer coats the nanostructure.

Increase in Open-circuit Voltage and Improved Stability of Organic Solar Cells by Inserting a Molybdenum Trioxide Buffer Layer

2009 ◽  
Vol 1154 ◽  
Author(s):  
Hideyuki Murata ◽  
Yoshiki Kinoshita ◽  
Yoshihiro Kanai ◽  
Toshinori Matsushima ◽  
Yuya Ishii
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Organic Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Type Material ◽  
Type Layer ◽  
Improved Stability ◽  
The Stability ◽  
P Type

AbstractWe report the increase in open-circuit voltage (Voc) by inserting of MoO3 layer on ITO substrate to improve built-in potential of organic solar cells (OSCs). In the OSCs using 5,10,15,20-tetraphenylporphyrine (H2TPP) as a p-type material and C60 as a n-type material, the Voc effectively increased from 0.57 to 0.97 V as increasing MoO3 thickness. The obtained highest Voc (0.97 V) is consistent with the theoretical value estimated from the energy difference between the LUMO (−4.50 eV) of C60 and the HOMO (−5.50 eV) of H2TPP layer. Importantly, the enhancement in the Voc was achieved without affecting the short-circuit current density (Jsc) and the fill-factor (FF). Thus, the power conversion efficiency of the device linearly increased from 1.24% to 1.88%. We also demonstrated that a MoO3 buffer layer enhances the stability of OSCs after photo-irradiation. We have investigated the stability of OSCs using H2TPP and N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine as a p-type layer. The both devices with MoO3 layer showed improved stability. These results clearly suggest that the interface at ITO/p-type layer affects the device stability.

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped P-Type hgcdte

1997 ◽  
Vol 487 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.31) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2× 1016 cm−3, μ=350 cm2.V−1.−1).

Reactive Ion Etching (RIE) Induced p- to n-Type Conversion in Extrinsically Doped p-Type HgCdTe

1997 ◽  
Vol 484 ◽  
Author(s):  
C. A. Musca ◽  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
J. M. Dell ◽  
J. Antoszewski ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Laser Beam ◽  
Reactive Ion Etching ◽  
Epitaxial Layers ◽  
Processing Conditions ◽  
Induced Current ◽  
Type Conversion ◽  
Ion Etching ◽  
Type Layer ◽  
P Type

AbstractMercury annealing of reactive ion etching (RIE) induced p- to n-type conversion in extrinsically doped p-type epitaxial layers of HgCdTe (x=0.3 1) has been used to reconvert n-type conversion sustained during RIE processing. For the RIE processing conditions used (400mT, CH4/H2, 90 W) p- to n-type conversion was observed using laser beam induced current (LBIC) measurements. After a sealed tube mercury anneal at 200°C for 17 hours, LBIC measurements clearly indicated no n-type converted region remained. Subsequent Hall measurements confirmed that the material consisted of a p-type layer, with electrical properties equivalent to that of the initial as-grown wafer (NA-ND=2×1016 cm−3,.=350 cm2.V−1. S−1).

scholarly journals Unveiling hole trapping and surface dynamics of NiO nanoparticles

2018 ◽  
Vol 9 (1) ◽  
pp. 223-230 ◽  
Author(s):  
Luca D'Amario ◽  
Jens Föhlinger ◽  
Gerrit Boschloo ◽  
Leif Hammarström
Keyword(s):  
Energy Conversion ◽  
Band Gap ◽  
Type Material ◽  
Device Performance ◽  
Surface Dynamics ◽  
Nio Nanoparticles ◽  
Hole Trapping ◽  
P Type ◽  
Energy Conversion Devices

Mesoporous NiO is used as p-type material in photoelectrochemical energy conversion devices. The presence of two kinds of hole traps can affect device performance. Here, after band-gap excitation, the relaxation of the hole into two different traps was observed and characterized.

Detecting the 10 Angstroms That Change MEMS Performance

2004 ◽  
Author(s):  
Erika Schutte ◽  
Jack Martin
Keyword(s):  
Thin Films ◽  
Device Performance ◽  
Processing Conditions ◽  
Packaging Process ◽  
Mems Sensor ◽  
Process Characterization ◽  
Measurement Protocol ◽  
Mems Device

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.

scholarly journals Design of 3D Additively Manufactured Hybrid Structures for Cranioplasty

Materials ◽  
2021 ◽  
Vol 14 (1) ◽  
pp. 181
Author(s):  
Roberto De Santis ◽  
Teresa Russo ◽  
Julietta V. Rau ◽  
Ida Papallo ◽  
Massimo Martorelli ◽  
...  
Keyword(s):  
Physical Models ◽  
Cranial Bone ◽  
Head Model ◽  
Rigid Sphere ◽  
Element Analysis ◽  
Aliphatic Polyesters ◽  
Hybrid Device ◽  
Wide Range ◽  
Hybrid Devices ◽  
Technical Solutions

A wide range of materials has been considered to repair cranial defects. In the field of cranioplasty, poly(methyl methacrylate) (PMMA)-based bone cements and modifications through the inclusion of copper doped tricalcium phosphate (Cu-TCP) particles have been already investigated. On the other hand, aliphatic polyesters such as poly(ε-caprolactone) (PCL) and polylactic acid (PLA) have been frequently investigated to make scaffolds for cranial bone regeneration. Accordingly, the aim of the current research was to design and fabricate customized hybrid devices for the repair of large cranial defects integrating the reverse engineering approach with additive manufacturing, The hybrid device consisted of a 3D additive manufactured polyester porous structures infiltrated with PMMA/Cu-TCP (97.5/2.5 w/w) bone cement. Temperature profiles were first evaluated for 3D hybrid devices (PCL/PMMA, PLA/PMMA, PCL/PMMA/Cu-TCP and PLA/PMMA/Cu-TCP). Peak temperatures recorded for hybrid PCL/PMMA and PCL/PMMA/Cu-TCP were significantly lower than those found for the PLA-based ones. Virtual and physical models of customized devices for large cranial defect were developed to assess the feasibility of the proposed technical solutions. A theoretical analysis was preliminarily performed on the entire head model trying to simulate severe impact conditions for people with the customized hybrid device (PCL/PMMA/Cu-TCP) (i.e., a rigid sphere impacting the implant region of the head). Results from finite element analysis (FEA) provided information on the different components of the model.

Ultraviolet light-emitting diodes with polarization-doped p-type layer

2016 ◽  
Vol 97 ◽  
pp. 353-357 ◽  
Author(s):  
Wenxiao Hu ◽  
Ping Qin ◽  
Weidong Song ◽  
Chongzhen Zhang ◽  
Rupeng Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Type Layer ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Type Layer ◽  
Growth Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

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