Fabrication of ZnO Nanorods p–n Homojunction Light-Emitting Diodes Using Ag Film as Self-Doping Source for p-Type ZnO Nanorods

2018 ◽  
Vol 122 (22) ◽  
pp. 11993-12001 ◽  
Author(s):  
Do-Kyun Kwon ◽  
Yoann Porte ◽  
Jae-Min Myoung
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Light Emitting ◽  
P Type ◽  
Ag Film

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

Ultraviolet light-emitting diodes with polarization-doped p-type layer

2016 ◽  
Vol 97 ◽  
pp. 353-357 ◽  
Author(s):  
Wenxiao Hu ◽  
Ping Qin ◽  
Weidong Song ◽  
Chongzhen Zhang ◽  
Rupeng Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Type Layer ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Type Layer ◽  
Growth Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

Improved positive polaron stability of the p-type host for long lifetime in phosphorescent organic light-emitting diodes

2021 ◽  
Author(s):  
Ji Ae Kang ◽  
Jun Seop Lim ◽  
Jun Yeob Lee
Keyword(s):  
Light Emitting Diodes ◽  
Oxidation Stability ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Type Host ◽  
Organic Light ◽  
Long Lifetime ◽  
Device Lifetime ◽  
P Type ◽  
Polaron Stability

Long lifetime is one of requirements for commercialization of organic light-emitting diodes (OLEDs). In this paper, we improved the device lifetime of phosphorescent OLEDs by enhancing oxidation stability of the...

High-Transmittance NiSc/Ag/ITO p-Type Ohmic Electrode for Near-UV GaN-Based Light-Emitting Diodes

2007 ◽  
Vol 51 (1) ◽  
pp. 159 ◽  
Author(s):  
Hyun-Gi Hong ◽  
Hyunseok Na ◽  
Tae-Yeon Seong ◽  
Takhee Lee ◽  
June O Song ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type
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