Forming-free Resistance Random Access Memory Using Ta2O5/TaOx Bi-layer Prepared by Magnetron Sputtering Method

2012 ◽  
Vol 1430 ◽  
Author(s):  
Natsuki Fukuda ◽  
Kazunori Fukuju ◽  
Isamu Yogosawa ◽  
Kazumasa Horita ◽  
Shin Kikuchi ◽  
...  
Keyword(s):  
Mass Production ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Change ◽  
Resistance Random Access Memory ◽  
Good Uniformity ◽  
Switching Characteristics ◽  
Excellent Stability

ABSTRACTThis paper describes proposal of ReRAM switching mechanism, development of production tool for ReRAM sputtering and improvement in TaOx-ReRAM switching characteristics. We propose that a ReRAM-cell has stack a structure in which an oxygen vacancy supply layer (TaOx) and an oxygen accumulation layer (Ta2O5) sandwiched by the top and bottom electrodes. Resistance change of the ReRAM-cell is caused by the oxygen vacancies migrating between the TaOx and the Ta2O5 layers by applied voltage. This prediction corresponded to the experimental facts. The thickness of Ta2O5 film sputtered by a mass production tool had good uniformity (±1.0%) and excellent stability (±1.0%). Also the sheet resistance uniformity (1σ) of TaOx film had 3.6%. By examining the sputtering conditions, the ReRAM-cell having a Ta2O5/TaOx bi-layer operated in less than 100μA with a forming-free and had excellent endurance property to 1010 cycles at 50nsec.

Design principles of tuning oxygen vacancy diffusion in SrZrO3 for resistance random access memory

2015 ◽  
Vol 3 (16) ◽  
pp. 4081-4085 ◽  
Author(s):  
Zhonglu Guo ◽  
Linggang Zhu ◽  
Jian Zhou ◽  
Zhimei Sun
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Vacancy Diffusion ◽  
Access Memory ◽  
Promising Candidate ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Oxygen Vacancy Diffusion

Resistance random access memory (RRAM) is known to be a promising candidate for next generation non-volatile memory devices, in which the diffusion of oxygen vacancies plays a key role in resistance switching.

scholarly journals Research on Improving the Working Current of NbOx-Based Selector by Inserting a Ti Layer

2021 ◽  
Vol 8 ◽  
Author(s):  
Chunlei Liu ◽  
Guokun Ma ◽  
Junpeng Zeng ◽  
Qiuyang Tan ◽  
Ziqi Zhang ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Excellent Performance ◽  
Storage Density ◽  
Resistance Random Access Memory ◽  
The One ◽  
State Resistance ◽  
Switching Layer ◽  
Excellent Stability

To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbOx/Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100 mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbOx/Ti/Pt device has a great potential to drive RRAM in the V-point structure.

Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays

2015 ◽  
Vol 29 (35n36) ◽  
pp. 1550244 ◽  
Author(s):  
Yingtao Li ◽  
Rongrong Li ◽  
Peng Yuan ◽  
Xiaoping Gao ◽  
Enzi Chen
Keyword(s):  
Low Cost ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Good Point ◽  
Good Uniformity ◽  
Switching Characteristics ◽  
The One ◽  
Point Of Reference

In this paper, a low-cost Ti/TiO2/HfO2/TiO2/Ti stack structure is proposed as a selector for bipolar resistive random access memory (RRAM) cross-bar array applications. We demonstrate reproducible resistive switching characteristics with significant nonlinearity and good uniformity in the one selector and one resistor (1S1R) structure device that integrate the bidirectional selector with a bipolar Pt/Ti/HfO2/Pt RRAM device. These results provide a good point of reference for evaluating the potential low-cost applications in bipolar RRAM cross-bar array.

Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device

2013 ◽  
Vol 528 ◽  
pp. 26-30 ◽  
Author(s):  
Jyun-Bao Yang ◽  
Ting-Chang Chang ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
Po-Chun Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

A resistive device with electrolyte as active electrode

2020 ◽  
Vol 34 (28) ◽  
pp. 2050267
Author(s):  
Tian Kang ◽  
Xiaoyu Chen ◽  
Jia Zhu ◽  
Yun Huang ◽  
Zhuojie Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Conductive Filament ◽  
Active Electrode ◽  
Ion Migration ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

Due to the outstanding performance of resistance random access memory (RRAM) in the memory field, the study of resistive switching (RS) phenomena has become extremely noticeable in the recent years. The mechanism of metal conductive filamentary RRAM is already clear, but the conditions of the RS are still unclear. Therefore, this paper aims to explore the conditions for the occurrence of resistive, using a new RS structure called Electrolyte-Oxide-Semiconductor (EOS). This structure is based on the formation of metal conductive filament and exhibits the unipolar switching characteristics. Due to the formation or rupture of the conductive filaments, this device exhibits different resistance states. A series model of electrolyte and conductive filaments is used to explain the IV curve of this device. Compared with the device using a metal active electrode, the active electrode of this device is originally ionized. Therefore, it would be a better tool to explore the mechanism of ion migration and the formation of conductive filaments. Materials screening of metal in RRAM would also be more efficient.

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