Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device

2013 ◽  
Vol 528 ◽  
pp. 26-30 ◽  
Author(s):  
Jyun-Bao Yang ◽  
Ting-Chang Chang ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
Po-Chun Yang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

A resistive device with electrolyte as active electrode

2020 ◽  
Vol 34 (28) ◽  
pp. 2050267
Author(s):  
Tian Kang ◽  
Xiaoyu Chen ◽  
Jia Zhu ◽  
Yun Huang ◽  
Zhuojie Chen ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory ◽  
Conductive Filament ◽  
Active Electrode ◽  
Ion Migration ◽  
Resistance Random Access Memory ◽  
Switching Characteristics

Due to the outstanding performance of resistance random access memory (RRAM) in the memory field, the study of resistive switching (RS) phenomena has become extremely noticeable in the recent years. The mechanism of metal conductive filamentary RRAM is already clear, but the conditions of the RS are still unclear. Therefore, this paper aims to explore the conditions for the occurrence of resistive, using a new RS structure called Electrolyte-Oxide-Semiconductor (EOS). This structure is based on the formation of metal conductive filament and exhibits the unipolar switching characteristics. Due to the formation or rupture of the conductive filaments, this device exhibits different resistance states. A series model of electrolyte and conductive filaments is used to explain the IV curve of this device. Compared with the device using a metal active electrode, the active electrode of this device is originally ionized. Therefore, it would be a better tool to explore the mechanism of ion migration and the formation of conductive filaments. Materials screening of metal in RRAM would also be more efficient.

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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