Photo-controllable Resistive Memory Based on Polymer Materials

2015 ◽  
Vol 1729 ◽  
pp. 119-124
Author(s):  
Mikhail Dronov ◽  
Maria Kotova ◽  
Ivan Belogorohov
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Polymer Materials ◽  
Charge Storage ◽  
Resistive Memory ◽  
Electrical Behavior ◽  
Filament Formation ◽  
Behavior Based

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on polymer materials. We demonstrate that adding photosensitive particles to admixture allows us to control switching voltages and to observe photo-induced switching in addition to electrical one. From the properties of electrically-induced resistive switching and from the presence of light-induced switching we propose the necessity to consider crossover between to different switching mechanisms – filament formation and charge storage.

New MEH-PPV Based Composite Materials for Rewritable Nonvolatile Polymer Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Mikhail Dronov ◽  
Ivan Belogorohov ◽  
Dmitry Khokhlov
Keyword(s):  
Composite Material ◽  
Composite Materials ◽  
Resistive Switching ◽  
Memory Performance ◽  
Memory Device ◽  
Memory Devices ◽  
Electrical Behavior ◽  
Aluminum Phthalocyanine ◽  
Behavior Based ◽  
Polymer Memory

ABSTRACTWe present the memory performance of devices with bistable electrical behavior based on MEH-PPV (Poly (1-methoxy-4-(2-ethylhexyloxy)-p-phenylenevinylene)) containing metal (Zn or Fe-Ni) particles. Another memory device based on aluminum phthalocyanine chloride (PcAlCl) added to the composite material reveals the photoinduced switching, in addition to the electrical one. Possible mechanisms for resistive switching are discussed.

scholarly journals Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 318
Author(s):  
Yang Li ◽  
Cheng Zhang ◽  
Zhiming Shi ◽  
Jingni Li ◽  
Qingyun Qian ◽  
...  
Keyword(s):  
Data Storage ◽  
High Performance ◽  
Memory Performance ◽  
Resistive Memory ◽  
Molecular Systems ◽  
Threshold Voltages ◽  
Donor Acceptor ◽  
Low Threshold ◽  
Multilevel Memory ◽  
Further Development

The explosive growth of data and information has increasingly motivated scientific and technological endeavors toward ultra-high-density data storage (UHDDS) applications. Herein, a donor−acceptor (D–A) type small conjugated molecule containing benzothiadiazole (BT) is prepared (NIBTCN), which demonstrates multilevel resistive memory behavior and holds considerable promise for implementing the target of UHDDS. The as-prepared device presents distinct current ratios of 105.2/103.2/1, low threshold voltages of −1.90 V and −3.85 V, and satisfactory reproducibility beyond 60%, which suggests reliable device performance. This work represents a favorable step toward further development of highly-efficient D−A molecular systems, which opens more opportunities for achieving high performance multilevel memory materials and devices.

Detection of resistive switching behavior based on the Al 2 O 3 /ZnO/Al 2 O 3 structure with alumina buffers

2017 ◽  
Vol 623 ◽  
pp. 8-13 ◽  
Author(s):  
Q. Qiao ◽  
D. Xu ◽  
Y.W. Li ◽  
J.Z. Zhang ◽  
Z.G. Hu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Behavior Based

Well-defined star-shaped donor–acceptor conjugated molecules for organic resistive memory devices

2015 ◽  
Vol 51 (75) ◽  
pp. 14179-14182 ◽  
Author(s):  
Hung-Chin Wu ◽  
Jicheng Zhang ◽  
Zhishan Bo ◽  
Wen-Chang Chen
Keyword(s):  
Charge Storage ◽  
Memory Devices ◽  
Resistive Memory ◽  
Conjugated Molecules ◽  
Storage Materials ◽  
End Groups ◽  
Donor Acceptor ◽  
Solution Processable ◽  
First Time

Solution processable star-shaped donor–acceptor conjugated molecules are explored for the first time as charge storage materials for resistor-type memory devices with a triphenylamine (donor) core, and three 1.8-naphthalimide (acceptors) end-groups.

The mechanism of filament formation in Ag doped Ge–Se resistive switching cell

2018 ◽  
Vol 30 (3) ◽  
pp. 2459-2463
Author(s):  
Bo Zhang ◽  
Vitezslav Zima ◽  
Petr Kutalek ◽  
Tomas Mikysek ◽  
Tomas Wagner
Keyword(s):  
Resistive Switching ◽  
Filament Formation

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Transient Current of Resistive Switching of a NiO$_{x}$ Resistive Memory

2012 ◽  
Vol 51 ◽  
pp. 041101 ◽  
Author(s):  
Chih-Yi Liu ◽  
Jen-Yen Ho ◽  
Jyun-Jie Huang ◽  
Hung-Yu Wang
Keyword(s):  
Resistive Switching ◽  
Transient Current ◽  
Resistive Memory

A solution processed metal–oxo cluster for rewritable resistive memory devices

2019 ◽  
Vol 7 (4) ◽  
pp. 843-852 ◽  
Author(s):  
Kui Zhou ◽  
Guanglong Ding ◽  
Chen Zhang ◽  
Ziyu Lv ◽  
Shenghuang Luo ◽  
...  
Keyword(s):  
Activation Energy ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Solution Processed ◽  
Switching Behaviour

A memory device based on metal–oxo cluster-assembled materials demonstrates a redox-based resistive switching behaviour which is correlated with the migration of hydroxide ions with low activation energy.

Effects of Ultrathin Al Layer Insertion on Resistive Switching Performance in an Amorphous Aluminum Oxide Resistive Memory

2010 ◽  
Vol 3 (9) ◽  
pp. 091101 ◽  
Author(s):  
Jaehoon Song ◽  
Akbar I. Inamdar ◽  
ByeongUk Jang ◽  
Kiyoung Jeon ◽  
YoungSam Kim ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Resistive Switching ◽  
Resistive Memory ◽  
Switching Performance

scholarly journals Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2755
Author(s):  
Tzu-Han Su ◽  
Ke-Jing Lee ◽  
Li-Wen Wang ◽  
Yu-Chi Chang ◽  
Yeong-Her Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Sol Gel ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Scanning Electron Microscope Image ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Electron Microscope Image ◽  
Scanning Electron

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.

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