Large Area Graphene on Polymer Films for Transparent and Flexible Field Emission Device

2011 ◽  
Vol 1283 ◽  
Author(s):  
Ved Prakash Verma ◽  
Santanu Das ◽  
Indranil Lahiri ◽  
WonBong Choi

ABSTRACTLarge scale fabrication of graphene over transparent flexible polymer, Polyethelyne tetrapthalate (PET), and its application in flexible field emission display is reported here. We used Cu foil (~160 mm x 60 mm) to grow graphene by thermal chemical vapor deposition process and transfer the graphene over a polymer using a straightforward hot press lamination technique. The fabrication method is facile as there is no rigorous chemical process involved and the process is also applicable towards the fabrication of large scale graphene over a wide range of transparent flexible substrates for foldable micro-electronics applications. Further, we demonstrate the application of graphene/PET polymer film as anode of transparent flexible field emission display device. The device shows low turn-on voltage ~ 1.75V/μm and high current density of ~ 65μA/cm2 with field enhancement factor (β) ~1000.

2020 ◽  
Vol 15 (2) ◽  
pp. 276-283 ◽  
Author(s):  
Junqi Xu ◽  
Yanrui Wang ◽  
Wenjie Wang ◽  
Zijun Xu ◽  
Yonglei Jia ◽  
...  

Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.


Author(s):  
Kaito Kanahashi ◽  
Masatou Ishihara ◽  
Masataka Hasegawa ◽  
Hiromichi Ohta ◽  
Taishi Takenobu

Abstract This study reports on the thermoelectric properties of large-area graphene films grown by chemical vapor deposition (CVD) methods. Using the electric double layer gating technique, both the continuous doping of hole or electron carriers and modulation of the Fermi energy are achieved, leading to wide-range control of the Seebeck coefficient and electrical conductivity. Consequently, the maximum power factors of the CVD-grown large-area graphene films are 6.93 and 3.29 mW m–1 K–2 for p- and n-type carrier doping, respectively. These results are the best values among large-scale flexible materials, such as organic conducting polymers and carbon nanotubes, suggesting that CVD-grown large-area graphene films have potential for thermoelectric applications.


2000 ◽  
Vol 10 (01) ◽  
pp. 5-11
Author(s):  
YOUNG CHUL CHOI ◽  
YOUNG SOO PARK ◽  
YOUNG HEE LEE ◽  
WON BONG CHOI ◽  
NAE SUNG LEE ◽  
...  

Carbon nanotube (CNT)-based field emission displays (FEDs) have been fabricated using well-aligned nanotubes on substrates in situ grown by thermal chemical vapor deposition (CVD), and paste squeeze and surface rubbing techniques. Although the former seems to be an ultimate approach for CNT-based FED, a large area synthesis and uniform field emission over the entire area is not yet easily accessible. On the other hand, the latter is fully scalable on glass substrates and shows very high luminance of 1800 cd/m2 at 4 V/μm. The degradation of emission currents for single-wall carbon nanotubes was less than 10% in electrical aging tests. Large field-enhancement factors (23,000–46,000) and low turn-on voltages (1.5-3 V/μm) were attributed to well-aligned carbon nanotubes on substrates and a large number density of carbon nanotubes of 5-10 μm-2, which was confirmed by high-resolution scanning electron microscopy.


MRS Bulletin ◽  
1998 ◽  
Vol 23 (9) ◽  
pp. 16-21 ◽  
Author(s):  
Dieter M. Gruen ◽  
Ian Buckley-Golder

Carbon in the form of diamond is the stuff of dreams, and the image of the diamond evokes deep and powerful emotions in humans. Following the successful synthesis of diamond by high-pressure methods in the 1950s, the startling development of the low-pressure synthesis of diamond films in the 1970s and 1980s almost immediately engendered great expectations of utility. The many remarkable properties of diamond due in part to its being the most atomically dense material in the universe (hardness, thermal conductivity, friction coefficient, transparency, etc.) could at last be put to use in a multitude of practical applications. “The holy grail”—it was realized early on—would be the development of large-area, doped, single-crystal diamond wafers for the fabrication of high-temperature, extremely fast integrated circuits leading to a revolution in computer technology.Excitement in the community of chemical-vapor-deposition (CVD) diamond researchers, funding agencies, and industrial companies ran high in expectation of early realization for many of the commercial goals that had been envisioned: tool, optical, and corrosion-resistant coatings; flat-panel displays; thermomanagement for electronic components, etc. Market projection predicting diamond-film sales in the billions of dollars by the year 2000 was commonplace. Hopes were dashed when these optimistic predictions ran up against the enormous scientific and technical problems that had to be overcome in order for those involved to fully exploit the potential of diamond. This experience is not new to the scientific community. One need only remind oneself of the hopes for cheap nuclear power or for high-temperature superconducting wires available at hardware stores to realize that the lag between scientific discoveries and their large-scale applications can be very long. Diamond films are in fact being used today in commercial applications.


2020 ◽  
Vol 230 ◽  
pp. 00006
Author(s):  
Paola Lova ◽  
Paolo Giusto ◽  
Francesco Di Stasio ◽  
Giovanni Manfredi ◽  
Giuseppe M. Paternò ◽  
...  

Thanks to versatile optoelectronic properties solution processable perovskites have attracted increasing interest as active materials in photovoltaic and light emitting devices. However, the deposition of perovskite thin films necessitates wide range solvents that are incompatible with many other solution-processable media, including polymers that are usually dissolved by the perovskite solvents. In this work, we demonstrate that hybrid perovskite thin films can be coupled with all polymer planar photonic crystals with different approaches to achieve emission intensity enhancement and reshaping using different approaches. The possibility to control and modify the emission spectrum of a solution processable perovskite via a simple spun-cast polymer structure is indeed of great interest in optoelectronic applications requiring high color purity or emission directionality. Furthermore, thanks to the ease of fabrication and scalability of solution-processed photonic crystals, this approach could enable industrial scale production of low-cost, large area, lightweight and flexible polymer-perovskite lighting devices, which may be tuned without resorting to compositional engineering.


2010 ◽  
Vol 428-429 ◽  
pp. 413-416 ◽  
Author(s):  
Yu Kui Li ◽  
Wen Sheng Xing

Because of better field emission characteristics, carbon nanotube was a suitable and excellent cathode material for use in the field emission display device. The screen-printing process was adopted in the course of device fabrication for decreasing the manufacturing cost of the pixel array type field emission display. The new simple-structure flat panel display device with carbon nanotube emitters was reported. The design and fabrication process of pixel array cathode structure were also presented. The silver slurry was screen-printed to form the conducting layer, and the insulation slurry was used to form the high quality insulation layer and covering layer, respectively. The whole display device was vacuum-packaged and developed. The fabricated pixel array type field emission display exhibited better field emission performance and adequate brightness.


2005 ◽  
Vol 901 ◽  
Author(s):  
Devon McClain ◽  
Mason DeRoss ◽  
Noel Tavan ◽  
Jun Jiao ◽  
Coralee M McCarter ◽  
...  

AbstractArrays of multi-walled carbon nanotunbe (CNT) bundles were fabricated on silicon [100] substrate with iron-nitrate sol-gel catalyst patterned via standard photolithographic techniques. Nanotube bundles with diameters ranging from 400µm to 15µm were grown in a chemical vapor deposition reactor and electrically characterized using a scanning-anode probe apparatus. Results showed a relatively low number of graphitic layers in individual nanotubes and a definite increase in field emission performance with decreasing bundle diameter. A 400µm wide matt of CNTs yielded a turn-on field of 6.7 V/µm and field enhancement of 602 while 15µm bundles performed significantly better with turn-on fields of 1.6 V/µm and field enhancement factors of 2425. The overall trend strongly suggests that the field emission character of CNT based aggregate structures such as those presented here is proportional to their aspect ratio.


2010 ◽  
Vol 148-149 ◽  
pp. 1327-1330
Author(s):  
Hui Li ◽  
Xiao Gang Zhou ◽  
Chao Yuan ◽  
Gen Sheng Dou

Carbon nanotube used as the cathode material, the diode-type field emission display panel was developed with low-cost screen-printing method and precise photolithography process. The modified CNT field emitter was fabricated for improving the field emission characteristic, and the detailed fabrication process was also presented. The indium-tin-oxide film on the cathode back-plane was divided to form the CNT cathode electrode, and the insulation slurry was screen-printed to form the insulation layer. Field emission characteristic of whole display device was measured. The sealed field emission display panel showed good emission properties and high display image brightness.


2008 ◽  
Vol 8 (4) ◽  
pp. 2147-2150 ◽  
Author(s):  
Paul C. P. Watts ◽  
Stephen M. Lyth ◽  
Simon J. Henley ◽  
S. Ravi ◽  
P. Silva

We report substantial improvement of the field emission properties from aligned carbon nanotubes grown on aligned carbon nanofibres by a two-stage plasma enhanced chemical vapour deposition (PECVD) process. The threshold field decreased from 15.0 to 3.6 V/μm after the secondary growth. The field enhancement factor increased from 240 to 1480. This technique allows for superior emission of electrons for carbon nanotube/nanofibre arrays grown directly on highly doped silicon for direct integration in large area displays.


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