CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2011 ◽  
Vol 1283 ◽  
Author(s):  
Benjamin Mailly Giacchetti ◽  
Allen Hsu ◽  
Han Wang ◽  
Ki Kang Kim ◽  
Jing Kong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Fabrication Technology ◽  
Initial Characterization ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Fet

ABSTRACTThis paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors

The Analyst ◽  
2016 ◽  
Vol 141 (9) ◽  
pp. 2704-2711 ◽  
Author(s):  
Charles Mackin ◽  
Tomás Palacios
Keyword(s):  
Measurement System ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Sensor Systems ◽  
Array Architecture ◽  
Effect Transistor ◽  
Dc Characterization

This work reports a novel graphene electrolyte-gated field-effect transistor (EGFET) array architecture along with a compact, self-contained, and inexpensive measurement system that allows DC characterization of hundreds of graphene EGFETs as a function ofVDSandVGSwithin a matter of minutes.

scholarly journals Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

2021 ◽  
Vol 11 (1) ◽  
pp. 780
Author(s):  
Firas Natheer Abdul-Kadir ◽  
Yasir Hashim ◽  
Muhammad Nazmus Shakib ◽  
Faris Hassan Taha
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Drain Current ◽  
Oxide Thickness ◽  
Si Nanowire ◽  
Effect Transistor ◽  
Current Characteristics

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

2016 ◽  
Vol 4 (10) ◽  
pp. 2040-2046 ◽  
Author(s):  
Mehrdad Shaygan ◽  
Keivan Davami ◽  
Bo Jin ◽  
Thomas Gemming ◽  
Jeong-Soo Lee ◽  
...  
Keyword(s):  
Shell Structure ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Highly Sensitive ◽  
Effect Transistor ◽  
Core Shell Structure ◽  
Fabrication And Characterization

The fabrication and characterization of a field effect transistor using a radial core/shell structure based on ZnTe nanowires is reported here.

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Sensors ◽  
2018 ◽  
Vol 18 (7) ◽  
pp. 2178 ◽  
Author(s):  
Shaili Falina ◽  
Sora Kawai ◽  
Nobutaka Oi ◽  
Hayate Yamano ◽  
Taisuke Kageura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Effect Transistor

Identification of types of membrane injuries and cell death using whole cell-based proton-sensitive field-effect transistor systems

The Analyst ◽  
2017 ◽  
Vol 142 (18) ◽  
pp. 3451-3458 ◽  
Author(s):  
Yuki Imaizumi ◽  
Tatsuro Goda ◽  
Akira Matsumoto ◽  
Yuji Miyahara
Keyword(s):  
Cell Death ◽  
Mammalian Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensing ◽  
Membrane Injury ◽  
Whole Cell ◽  
Sensing Systems ◽  
Effect Transistor ◽  
Chemical Stimuli

Membrane injury and apoptosis of mammalian cells by chemical stimuli were distinguished using ammonia-perfused continuous pH-sensing systems.

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