Large-scale sensor systems based on graphene electrolyte-gated field-effect transistors

The Analyst ◽  
2016 ◽  
Vol 141 (9) ◽  
pp. 2704-2711 ◽  
Author(s):  
Charles Mackin ◽  
Tomás Palacios
Keyword(s):  
Measurement System ◽  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Sensor Systems ◽  
Array Architecture ◽  
Effect Transistor ◽  
Dc Characterization

This work reports a novel graphene electrolyte-gated field-effect transistor (EGFET) array architecture along with a compact, self-contained, and inexpensive measurement system that allows DC characterization of hundreds of graphene EGFETs as a function ofVDSandVGSwithin a matter of minutes.

DC characterization of 4H-SiC depletion mode MOS field effect transistor

2006 ◽  
Vol 50 (3) ◽  
pp. 384-387 ◽  
Author(s):  
P. Zhao ◽  
Rusli ◽  
C.L. Zhu ◽  
H. Wang ◽  
C.C. Tin
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Dc Characterization

CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

2011 ◽  
Vol 1283 ◽  
Author(s):  
Benjamin Mailly Giacchetti ◽  
Allen Hsu ◽  
Han Wang ◽  
Ki Kang Kim ◽  
Jing Kong ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Fabrication Technology ◽  
Initial Characterization ◽  
Effect Transistor ◽  
Grown Graphene ◽  
Graphene Fet

ABSTRACTThis paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

scholarly journals Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

2021 ◽  
Vol 11 (1) ◽  
pp. 780
Author(s):  
Firas Natheer Abdul-Kadir ◽  
Yasir Hashim ◽  
Muhammad Nazmus Shakib ◽  
Faris Hassan Taha
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Drain Current ◽  
Oxide Thickness ◽  
Si Nanowire ◽  
Effect Transistor ◽  
Current Characteristics

This research paper explains the effect of the dimensions of Gate-all-around Si nanowire tunneling field effect transistor (GAA Si-NW TFET) on ON/OFF current ratio, drain induces barrier lowering (DIBL), sub-threshold swing (SS), and threshold voltage (VT). These parameters are critical factors of the characteristics of tunnel field effect transistors. The Silvaco TCAD has been used to study the electrical characteristics of Si-NW TFET. Output (gate voltage-drain current) characteristics with channel dimensions were simulated. Results show that 50nm long nanowires with 9nm-18nm diameter and 3nm oxide thickness tend to have the best nanowire tunnel field effect transistor (Si-NW TFET) characteristics.

Highly sensitive photodetectors using ZnTe/ZnO core/shell nanowire field effect transistors with a tunable core/shell ratio

2016 ◽  
Vol 4 (10) ◽  
pp. 2040-2046 ◽  
Author(s):  
Mehrdad Shaygan ◽  
Keivan Davami ◽  
Bo Jin ◽  
Thomas Gemming ◽  
Jeong-Soo Lee ◽  
...  
Keyword(s):  
Shell Structure ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Core Shell ◽  
Highly Sensitive ◽  
Effect Transistor ◽  
Core Shell Structure ◽  
Fabrication And Characterization

The fabrication and characterization of a field effect transistor using a radial core/shell structure based on ZnTe nanowires is reported here.

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Diacenopentalene dicarboximides as new n-type organic semiconductors for field-effect transistors

2016 ◽  
Vol 4 (37) ◽  
pp. 8758-8764 ◽  
Author(s):  
Gaole Dai ◽  
Jingjing Chang ◽  
Linzhi Jing ◽  
Chunyan Chi
Keyword(s):  
Organic Semiconductors ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Processing Technique ◽  
Solution Processing ◽  
Effect Transistor

Two diacenopentalene dicarboximides were synthesized, and their devices made with solution-processing technique exhibited n-type field-effect transistor behavior with electron mobility of up to 0.06 cm2 V−1 s−1.

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

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