scholarly journals The Development of Anodic Aluminum Oxide Based Micro-channel Plate for Large-area Photo-detector

2011 ◽  
Vol 1303 ◽  
Author(s):  
Seon Woo Lee ◽  
Qing Peng ◽  
Anil U. Mane ◽  
Jeffrey W. Elam ◽  
Karen Byrum ◽  
...  

ABSTRACTAnodized Aluminum Oxide (AAO) based micro-channel plates (MCP) are fabricated in order to develop economical large-area photodetectors. Commercially available glass capillary array has a limitation to reach channel diameter below ~10 microns. However, smaller channel diameter is desired for better spatial and fast timing resolution. AAO based MCP is a good candidate to produce channel diameter less than 10 um by taking advantage of the nano-scale intrinsic pores during etching process. In this study, various channel diameters are fabricated with use of lithographic patterning techniques and wet etching; and characterized with optical, atomic force, and scanning electron microscopies. The channel diameter, channel length and related aspect ratio, as well as the open area are varied in order to maximize the MCP photon amplification.

Author(s):  
Camden Ertley ◽  
Alexey V. Lyashenko ◽  
Bernhard W. Adams ◽  
Till Cremer ◽  
Michael J. Minot ◽  
...  

2021 ◽  
Author(s):  
Bintao Du ◽  
Zhihai Wu ◽  
Jun Xia ◽  
jun wu ◽  
Guodong Tong ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Goutham Arutchelvan ◽  
Quentin Smets ◽  
Devin Verreck ◽  
Zubair Ahmed ◽  
Abhinav Gaur ◽  
...  

AbstractTwo-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.


2007 ◽  
Vol 10 (12) ◽  
pp. C69 ◽  
Author(s):  
Ching-Jung Yang ◽  
Shih-Wei Liang ◽  
Pu-Wei Wu ◽  
Chih Chen ◽  
Jia-Min Shieh

2008 ◽  
Vol 22 (31n32) ◽  
pp. 5887-5894 ◽  
Author(s):  
HONG GUE SHIN ◽  
JONG TAE KWON ◽  
YOUNG HO SEO ◽  
BYEONG HEE KIM

A simple method for the fabrication of polymer master for antireflective surface is presented. In conventional fabrication methods for antireflective surface, coating method with low refractive index have usually been used. However, it is required to have a high cost and a long processing time for mass production. In this paper, antireflective surface was fabricated by using hot embossing process with porous anodized aluminum oxide. Through multi-AAO and etching processes, nano patterned master with high aspect ratio was fabricated at the large area. Size and aspect ratio of nano patterned master are about 175 ± 25 nm and 2 ~ 3, respectively. In order to replicate nano patterned master, hot embossing process was performed by varying the processing parameters such as temperature, pressure and embossing time etc. Finally, antireflective surface can be successfully obtained after etching process to remove selectively silicon layer of AAO master. Optical and rheological characteristics of antireflective surface were analyzed by using SEM, EDX and spectrometer inspection. Antireflective structure by replicating hot embossing process can be applied to various displays and automobile components.


2010 ◽  
Vol 20 (18) ◽  
pp. 3099-3105 ◽  
Author(s):  
David J. Comstock ◽  
Steven T. Christensen ◽  
Jeffrey W. Elam ◽  
Michael J. Pellin ◽  
Mark C. Hersam

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