Plasmon-Enhanced Emission Rates from III-Nitride Quantum Wells Using Tunable Surface Plasmons

2011 ◽  
Vol 1294 ◽  
Author(s):  
J. Henson ◽  
J. DiMaria ◽  
E. Dimakis ◽  
R. Li ◽  
S. Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Internal Quantum Efficiency ◽  
Strong Dependence ◽  
Substantial Reduction ◽  
Green Light ◽  
Photoluminescence Intensity ◽  
Emission Rates ◽  
Recombination Lifetime ◽  
Green Light Emission

ABSTRACTTwo-dimensional arrays of silver nanocylinders fabricated by electron-beam lithography are used to demonstrate plasmon-enhanced near-green light emission from nitride semiconductor quantum wells. Large enhancements in peak photoluminescence intensity (up to a factor of over 3) are obtained, accompanied by a substantial reduction in recombination lifetime indicative of increased internal quantum efficiency. The measured enhancement factors exhibit a strong dependence on the nanoparticle dimensions, underscoring the importance of geometrical tuning for this application.

Energy transfer from Bi3+ to Ho3+ triggers brilliant single green light emission in LaNbTiO6:Ho3+, Bi3+ phosphors

RSC Advances ◽  
2014 ◽  
Vol 4 (26) ◽  
pp. 13680-13686 ◽  
Author(s):  
Xingshuang Zhang ◽  
Guangjun Zhou ◽  
Juan Zhou ◽  
Haifeng Zhou ◽  
Peng Kong ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Light Emission ◽  
Green Light ◽  
Photoluminescence Intensity ◽  
Efficient Energy Transfer ◽  
Efficient Energy ◽  
Green Light Emission

LaNbTiO6:Ho3+, Bi3+ was synthesized and the remarkably enhance of photoluminescence intensity was ascribed to efficient energy transfer from Bi3+ to Ho3+.

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

2007 ◽  
Vol 90 (7) ◽  
pp. 071903 ◽  
Author(s):  
Shunfeng Li ◽  
Jörg Schörmann ◽  
Donat J. As ◽  
Klaus Lischka
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

scholarly journals Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays

2010 ◽  
Vol 18 (20) ◽  
pp. 21322 ◽  
Author(s):  
John Henson ◽  
Emmanouil Dimakis ◽  
Jeff DiMaria ◽  
Rui Li ◽  
Salvatore Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Silver Nanoparticle ◽  
Light Emission ◽  
Green Light ◽  
Nanoparticle Arrays ◽  
Green Light Emission ◽  
Ingan Quantum Wells

Assessment and Modification of Recombination Dynamics in InxGa1-xN-Based Quantum Wells

2008 ◽  
Vol 590 ◽  
pp. 249-274 ◽  
Author(s):  
Yoichi Kawakami ◽  
Akio Kaneta ◽  
Mitsuru Funato
Keyword(s):  
Quantum Wells ◽  
Diffusion Length ◽  
Internal Quantum Efficiency ◽  
Near Field ◽  
Radiative Lifetime ◽  
Photoluminescence Intensity ◽  
Small Diffusion ◽  
Growth Technique ◽  
Recombination Lifetime ◽  
Piezoelectric Field

Nanoscopic optical characterization using scanning near-field optical microscopy was performed on both InxGa1-xN/GaN single quantum wells (SQWs) grown on polar (0001) orientation and a semipolar (1122) microfacet SQW fabricated by a re-growth technique. The photoluminescence intensity of a conventional (0001) SQW emitting in the blue was completely independent of the threading dislocations (TDs) due to the small diffusion length less than 100 nm. In contrast, the photoluminescence intensity was well correlated with the TDs in the sample emitting in the green due to the association of In-rich clusters with dislocations, and the effect was enhanced by the larger diffusion length contribution from the longer radiative recombination lifetime. It was found that in a (1122) SQW, the suppression of the piezoelectric field leads to orders-of-magnitude faster radiative lifetime and consequently, a shorter diffusion length. In addition, the highest internal quantum efficiency was approximately 50% at 520 nm, which is about 50 nm longer than in (0001) QWs, suggesting that (1122) QWs are suitable for green emitters.

Plasmon-Enhanced Near-Green Light Emission from InGaN/GaN Quantum Wells

2019 ◽  
Vol 41 (6) ◽  
pp. 73-79
Author(s):  
Roberto Paiella ◽  
John Henson ◽  
Jeff DiMaria ◽  
Emmanouil Dimakis ◽  
Rui Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

Origins of efficient green light emission in phase-separated InGaN quantum wells

2006 ◽  
Vol 17 (15) ◽  
pp. 3734-3739 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Tao-Hung Hsueh ◽  
Ray-Ming Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission ◽  
Ingan Quantum Wells

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. Feng ◽  
V. V. Kuryatkov ◽  
A. Chandolu ◽  
D. Y. Song ◽  
M. Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Green Light Emission

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
Mitsuru Funato ◽  
Koji Nishizuka ◽  
Yoichi Kawakami ◽  
Yukio Narukawa ◽  
Takashi Mukai
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Growth Technique ◽  
Recombination Lifetime ◽  
Piezoelectric Fields

ABSTRACTInGaN/GaN multiple quantum wells (MQWs) with [0001], <11.2>, and <11.0> orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional c-oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.

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