Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer

2004 ◽  
Vol 84 (1) ◽  
pp. 49-51 ◽  
Author(s):  
Yuanping Sun ◽  
Yong-Hoon Cho ◽  
E.-K. Suh ◽  
H. J. Lee ◽  
R. J. Choi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Light Emission ◽  
Green Light ◽  
Indium Content ◽  
Carrier Dynamics ◽  
Carrier Transfer ◽  
Green Light Emission ◽  
Effective Carrier

High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

2021 ◽  
Vol 119 (24) ◽  
pp. 241103
Author(s):  
Miao Wang ◽  
Yu Lin ◽  
Jue-Min Yi ◽  
De-Yao Li ◽  
Jian-Ping Liu ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emission ◽  
Laser Diodes ◽  
Green Light ◽  
Circularly Polarized ◽  
Green Light Emission

Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

2007 ◽  
Vol 90 (7) ◽  
pp. 071903 ◽  
Author(s):  
Shunfeng Li ◽  
Jörg Schörmann ◽  
Donat J. As ◽  
Klaus Lischka
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

scholarly journals Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays

2010 ◽  
Vol 18 (20) ◽  
pp. 21322 ◽  
Author(s):  
John Henson ◽  
Emmanouil Dimakis ◽  
Jeff DiMaria ◽  
Rui Li ◽  
Salvatore Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Silver Nanoparticle ◽  
Light Emission ◽  
Green Light ◽  
Nanoparticle Arrays ◽  
Green Light Emission ◽  
Ingan Quantum Wells

scholarly journals Phosphorescent Molecularly Doped Light-Emitting Diodes with Blended Polymer Host and Wide Emission Spectra

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Jun Wang ◽  
Jun Gou ◽  
Weizhi Li
Keyword(s):  
Power Efficiency ◽  
High Efficiency ◽  
Light Emission ◽  
Green Light ◽  
Emission Spectra ◽  
Iridium Complex ◽  
Light Emitting ◽  
Host Materials ◽  
Green Light Emission ◽  
Organic Devices

Stable green light emission and high efficiency organic devices with three polymer layers were fabricated using bis[2-(4′-tert-butylphenyl)-1-phenyl-1H-benzoimidazole-N,C2′] iridium(III) (acetylacetonate) doped in blended host materials. The 1 wt% doping concentration showed maximum luminance of 7841 cd/cm2at 25.6 V and maximum current efficiency of 9.95 cd/A at 17.2 V. The electroluminescence spectra of devices indicated two main peaks at 522 nm and 554 nm coming from phosphor dye and a full width at half maximum (FWHM) of 116 nm. The characteristics of using blended host, doping iridium complex, emission spectrum, and power efficiency of organic devices were investigated.

Plasmon-Enhanced Near-Green Light Emission from InGaN/GaN Quantum Wells

2019 ◽  
Vol 41 (6) ◽  
pp. 73-79
Author(s):  
Roberto Paiella ◽  
John Henson ◽  
Jeff DiMaria ◽  
Emmanouil Dimakis ◽  
Rui Li ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission

Origins of efficient green light emission in phase-separated InGaN quantum wells

2006 ◽  
Vol 17 (15) ◽  
pp. 3734-3739 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Tao-Hung Hsueh ◽  
Ray-Ming Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Green Light Emission ◽  
Ingan Quantum Wells

Plasmon-Enhanced Emission Rates from III-Nitride Quantum Wells Using Tunable Surface Plasmons

2011 ◽  
Vol 1294 ◽  
Author(s):  
J. Henson ◽  
J. DiMaria ◽  
E. Dimakis ◽  
R. Li ◽  
S. Minissale ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Internal Quantum Efficiency ◽  
Strong Dependence ◽  
Substantial Reduction ◽  
Green Light ◽  
Photoluminescence Intensity ◽  
Emission Rates ◽  
Recombination Lifetime ◽  
Green Light Emission

ABSTRACTTwo-dimensional arrays of silver nanocylinders fabricated by electron-beam lithography are used to demonstrate plasmon-enhanced near-green light emission from nitride semiconductor quantum wells. Large enhancements in peak photoluminescence intensity (up to a factor of over 3) are obtained, accompanied by a substantial reduction in recombination lifetime indicative of increased internal quantum efficiency. The measured enhancement factors exhibit a strong dependence on the nanoparticle dimensions, underscoring the importance of geometrical tuning for this application.

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

2008 ◽  
Vol 104 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. Feng ◽  
V. V. Kuryatkov ◽  
A. Chandolu ◽  
D. Y. Song ◽  
M. Pandikunta ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Green Light Emission
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