Effects of Oxygen and Forming Gas Annealing on ZnO TFTs

2011 ◽  
Vol 1287 ◽  
Author(s):  
Jiaye Huang ◽  
Ujwal Radhakrishna ◽  
Martin Lemberger ◽  
Michael P.M. Jank ◽  
Sebastian Polster ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Morphological Changes ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
Post Deposition Annealing ◽  
Oxygen Annealing ◽  
Hydrogen Incorporation ◽  
Post Deposition ◽  
Additional Hydrogen ◽  
Bottom Gate

ABSTRACTZnO TFTs with bottom gate top S/D contact architecture were fabricated by sputtering of ZnO with layer thicknesses from 30 nm to 100 nm. The effect of post deposition annealing in oxygen and forming gas atmospheres at 400°C to 500°C on the devices was investigated. The tendencies of a lower threshold voltage Vth and a higher saturation mobility μsat for higher annealing temperature can be observed for both oxygen and forming gas annealing. Reduction of trap density in oxygen annealing and additional hydrogen incorporation in forming gas annealing play an important role for these electrical parameters. Morphological changes of increased grain size and fewer grain boundaries in the channel also contribute to tendencies in electrical characteristics of ZnO TFTs.

Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

2012 ◽  
Vol 177 (15) ◽  
pp. 1281-1285 ◽  
Author(s):  
Andrzej Taube ◽  
Robert Mroczyński ◽  
Katarzyna Korwin-Mikke ◽  
Sylwia Gierałtowska ◽  
Jan Szmidt ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Post Deposition ◽  
Mis Structures

Electrical Characteristics of LaAlO[sub 3] Gate Dielectrics Prepared by High-Pressure Hydrogen Post-Deposition Annealing

2006 ◽  
Vol 9 (11) ◽  
pp. F77 ◽  
Author(s):  
Musarrat Hasan ◽  
Min Seok Jo ◽  
Md. Shahriar Rahman ◽  
Hyejong Choi ◽  
Sungho Heo ◽  
...  
Keyword(s):  
High Pressure ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Post Deposition ◽  
Pressure Hydrogen

Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator

2011 ◽  
Vol 470 ◽  
pp. 79-84
Author(s):  
Hai Gui Yang ◽  
Masatoshi Iyota ◽  
Shogo Ikeura ◽  
Dong Wang ◽  
Hiroshi Nakashima
Keyword(s):  
Field Effect Transistor ◽  
Surface Reaction ◽  
Hole Concentration ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Post Deposition Annealing ◽  
Back Gate ◽  
Effect Transistor ◽  
Post Deposition

Al2O3 deposition and subsequent post-deposition annealing (Al2O3-PDA) is proposed as an effective method to passivate electrically active defects in Ge-rich SiGe-on-insulator (SGOI) substrates. We found that Al2O3-PDA could not only suppress the surface reaction during Al-PDA, but could also effectively reduce the defect-induced acceptor and hole concentration in Ge-rich SGOI. Al2O3-PDA greatly improves the electrical characteristics of a back-gate metal-oxide-semiconductor field-effect transistor fabricated on Ge-rich SGOI.

scholarly journals Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111)

2015 ◽  
Vol 17 (15) ◽  
pp. 9991-9996
Author(s):  
H. Wilkens ◽  
W. Spieß ◽  
M. H. Zoellner ◽  
G. Niu ◽  
T. Schroeder ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Profile Analysis ◽  
Morphological Changes ◽  
Low Energy ◽  
Energy Electron ◽  
Post Deposition Annealing ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Post Deposition

In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis.

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 545-548 ◽  
Author(s):  
Chee Chung Hoong ◽  
Kuan Yew Cheong
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Post Deposition Annealing ◽  
Different Temperatures ◽  
Effective Oxide Charge ◽  
Post Deposition

The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on metal-oxide-semiconductor characteristics of sol-gel derived HfO2 gate on n-type 4H-SiC have been investigated. After 30 min of the annealing, an accumulation of positive effective oxide charge (Qeff) has been observed in all samples. The total interface trap density and Qeff of the oxides annealed at 850 and 950 oC are comparable but an increment and reduction of the respective densities have been recorded when the oxide was annealed at 1050 oC. A reduction of near interface trap density has been revealed as the annealing temperature has been increased. These observation was closely related to the increment of leakage current density as the annealing temperature increased.

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