scholarly journals Post deposition annealing of epitaxial Ce1−xPrxO2−δ films grown on Si(111)

2015 ◽  
Vol 17 (15) ◽  
pp. 9991-9996
Author(s):  
H. Wilkens ◽  
W. Spieß ◽  
M. H. Zoellner ◽  
G. Niu ◽  
T. Schroeder ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Profile Analysis ◽  
Morphological Changes ◽  
Low Energy ◽  
Energy Electron ◽  
Post Deposition Annealing ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Post Deposition

In this work the structural and morphological changes of Ce1−xPrxO2−δ (x = 0.20, 0.35 and 0.75) films grown on Si(111) due to post deposition annealing are investigated by low energy electron diffraction combined with a spot profile analysis.

Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part I1

1999 ◽  
Vol 214 (10) ◽  
Author(s):  
M. Horn-von Hoegen
Keyword(s):  
Electron Diffraction ◽  
Surface Defects ◽  
Profile Analysis ◽  
Domain Size ◽  
Low Energy ◽  
Energy Electron ◽  
Vicinal Surfaces ◽  
Low Energy Electron Diffraction ◽  
Facet Orientation ◽  
Low Energy Electron

AbstractThe universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 Å. With the knowledge of the spot profile we could determine island and domain size distributions – even during deposition – and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.

Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part II1

1999 ◽  
Vol 214 (11) ◽  
Author(s):  
M. Horn-von Hoegen
Keyword(s):  
Electron Diffraction ◽  
Surface Defects ◽  
Profile Analysis ◽  
Domain Size ◽  
Low Energy ◽  
Energy Electron ◽  
Vicinal Surfaces ◽  
Low Energy Electron Diffraction ◽  
Facet Orientation ◽  
Low Energy Electron

AbstractThe universal capabilities of high resolution spot profile analysis low energy electron diffraction for in situ studies of surface morphology and surface defects will be discussed and demonstrated. The position of the diffraction spots is used to determine lateral lattice constants, step heights and the strain state of heterosystems with a precision of 0.02 Å. With the knowledge of the spot profile we could determine island and domain size distributions – even during deposition – and correlation functions of arbitrary surface defects. The variation of the spot profile with electron energy allows the evaluation of the 3dim. reciprocal space. With this the power spectrum of surface roughness, facet orientation, or step morphology of flat and vicinal surfaces could be completely characterised.

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