Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 313-317 ◽  
Author(s):  
Kenji Fujito ◽  
Shuichi Kubo ◽  
Isao Fujimura
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Growth Technique ◽  
Bulk Gan ◽  
Semipolar Gan ◽  
Remarkable Progress

AbstractThe remarkable progress in nonpolar and semipolar devices based on gallium nitride (GaN) in recent years has been driven by not only advancements in the epitaxial growth technique but also improvements in the quality of bulk nonpolar and semipolar GaN substrates. At present, high-quality nonpolar/semipolar substrates are only made by slicing thick bulk GaN crystals grown by hydride vapor-phase epitaxy (HVPE). Although HVPE is currently the most successful method for obtaining high-quality bulk GaN crystals, it is still difficult to obtain uniform crystals with large diameters and thicknesses. The size of the nonpolar/semipolar substrates has been limited by the growth thickness along the c-axis of bulk GaN crystals. Here we review the growth of bulk GaN crystals by HVPE to achieve high-quality and large-sized nonpolar and semipolar substrates.

scholarly journals Growth of Freestanding Gallium Nitride (GaN) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 141 ◽  
Author(s):  
Haixiao Hu ◽  
Baoguo Zhang ◽  
Lei Liu ◽  
Deqin Xu ◽  
Yongliang Shao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Chemical Vapor ◽  
Growth Stress ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
High Quality ◽  
Continuous Growth

The progress of nitride technology is widely limited and hindered by the lack of high-quality gallium nitride (GaN) wafers. Therefore, a large number of GaN epitaxial devices are grown on heterogeneous substrates. Although various additional treatments of substrate have been used to promote crystal quality, there is still plenty of room for its improvement, in terms of direct and continuous growth based on the hydride vapor phase epitaxy (HVPE) technique. Here, we report a three-step process that can be used to enhance the quality of GaN crystal by tuning V/III rate during successive HVPE process. In the growth, a metal-organic chemical vapor deposition (MOCVD) grown GaN on sapphire (MOCVD-GaN/Al2O3) was employed as substrate, and a high-quality GaN polyporous interlayer, with successful acquisition, without any additional substrate treatment, caused the growth stress to decrease to 0.06 GPa. Meanwhile the quality of GaN improved, and the freestanding GaN was directly obtained during the growth process.

Properties of Ge-doped, high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy

2010 ◽  
Vol 312 (24) ◽  
pp. 3569-3573 ◽  
Author(s):  
Yuichi Oshima ◽  
Takehiro Yoshida ◽  
Kazutoshi Watanabe ◽  
Tomoyoshi Mishima
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Bulk Gan

Growth of high-quality GaN crystals on a BCN nanosheet-coated substrate by hydride vapor phase epitaxy

CrystEngComm ◽  
2019 ◽  
Vol 21 (8) ◽  
pp. 1302-1308 ◽  
Author(s):  
Baoguo Zhang ◽  
Yongzhong Wu ◽  
Lei Zhang ◽  
Qin Huo ◽  
Haixiao Hu ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Carbon Nitride ◽  
Vapor Phase Epitaxy ◽  
Coating Material ◽  
Hydride Vapor Phase Epitaxy ◽  
High Quality ◽  
Coated Substrate ◽  
Boron Carbon Nitride ◽  
Boron Carbon

In this study, boron carbon nitride (BCN) nanosheets were used as a substrate coating material to grow gallium nitride (GaN) crystals by hydride vapor phase epitaxy.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Bulk Gan Crystal With Low Defect Density Grown By Hydride Vapor Phase Epitaxy

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Usui
Keyword(s):  
Vapor Phase ◽  
Flat Surface ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Extended Defect ◽  
New Approach ◽  
Bulk Gan ◽  
Gan Crystal ◽  
Reflectance Measurements

AbstractA new approach to grow thick GaN layers by hydride vapor phase epitaxy (HVPE) is described. Selective growth is carried out at the beginning of growth. The coalescence of selectively grown facet structures makes it possible to achieve a flat surface over the entire substrate. As a result, crack-free GaN films with mirror-like surfaces are successfully grown even to a thickness of about 100 μm on a 2-inch-diameter sapphire substrate. The extended defect density is as low as 6×107 cm−2. The reduction mechanism for dislocation is discussed based on TEM observation. The high optical properties of FIELO GaN are confirmed by 5 K photoluminescence and reflectance measurements.

Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Siegle ◽  
A. Hoffmann ◽  
L. Eckey ◽  
C. Thomsen ◽  
T. Detchprohm ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Depth Profile ◽  
Vapor Phase ◽  
Blue Shift ◽  
Peak Position ◽  
Hydride Vapor Phase Epitaxy ◽  
Spatially Resolved ◽  
Nitride Layers ◽  
Excitonic Luminescence ◽  
Strong Blue Shift

ABSTRACTWe present results of spatially-resolved photoluminescence and Raman measurements on a 200 μm thick GaN layer grown on sapphire by hydride vapor phase epitaxy. Our microphotoluminescence measurements reveal that the peak position of the excitonic and donoracceptor-pair transitions strongly depends on the distance to the substrate interface. We observed a strong blue shift near the interface and discuss the influence of strain, which we quantified by micro-Raman experiments.

Hydride vapor phase epitaxy for gallium nitride substrate

2019 ◽  
Vol 40 (10) ◽  
pp. 101801 ◽  
Author(s):  
Jun Hu ◽  
Hongyuan Wei ◽  
Shaoyan Yang ◽  
Chengming Li ◽  
Huijie Li ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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