scholarly journals Extended Low-Temperature Plasma-Assisted Bonding Enhances Wafer Bonding Strength Uniformity

MRS Bulletin ◽  
2005 ◽  
Vol 30 (10) ◽  
pp. 688-689
Author(s):  
Shiming Wu
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Bonding Strength ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Strength Uniformity

Low Temperature Plasma-Assisted-Wafer-Bonding for MEMS

2019 ◽  
Vol 3 (6) ◽  
pp. 355-366 ◽  
Author(s):  
Anke Sanz-Velasco ◽  
Martin Bring ◽  
Henrik Rödjegaård ◽  
Gert I. Andersson ◽  
Peter Enoksson
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Low Temperature Plasma ◽  
Temperature Plasma

Effect of Pre-Treatment on Substrates for Metal Coatings Fabricated by Low Pressure Cold Spray Technique

2021 ◽  
Author(s):  
Hiroki Saito ◽  
Hiroaki Ebihara ◽  
Yuji Ichikawa ◽  
Kazuhiro Ogawa
Keyword(s):  
Low Temperature ◽  
Bonding Strength ◽  
Cold Spraying ◽  
Low Pressure ◽  
Native Oxide ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Particle Bonding ◽  
Wide Range ◽  
Pre Treatment

Abstract Low pressure cold spraying is an attractive technique for onsite metal coating fabrication due to its compactness and portability. However; the bonding strength of the coating prepared by low pressure cold spraying is generally low; which restricts the further applications in engineering and industrial fields. To improve the bonding strength; pre-treatment on substrate surface can be an effective procedure. In this study; a low-temperature plasma treatment was applied to a pretreatment technique; and the effect of the treatment on particle bonding was compared with that of a laser treatment. Copper coatings on aluminum and copper substrates were selected and studied as basic metal materials. The SEM observation results show that the particle adhesion rate significantly increases by the laser and plasma treatments; due to the removal of the native oxide films on the substrates. The particle bonding on the plasma-treated substrate reveals better interfacial adhesion with less gap compared with the laser-treated one. The pre-treatment by low-temperature plasma can be an attractive technique to assist the cold spraying process due to the oxide removal ability and no thermal effect which can apply a wide range of materials.

Low Temperature MEMS Manufacturing Processes: Plasma Activated Wafer Bonding

2005 ◽  
Vol 872 ◽  
Author(s):  
Viorel Dragoi ◽  
Sharon Farrens
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Annealing Temperature ◽  
New Technology ◽  
Manufacturing Processes ◽  
Low Temperature Plasma ◽  
Standard Process ◽  
Temperature Plasma ◽  
Plasma Activation

AbstractThis paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperatures ranging from room temperature to maximum 400°C. For Si direct bonding using plasma activation the Si bulk fracture strength is reached after a thermal annealing of 1 hour at 300°C, much lower than the annealing temperature used for the standard process without plasma activation (∼1100°C). Experimental results illustrating the main benefits of the process are presented. The process was successfully applied also for bonding other materials than silicon.

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