Relations Between Basic Nuclear Data and Single-Event Upsets Phenomena

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 121-125 ◽  
Author(s):  
Jan Blomgren ◽  
Bo Granbom ◽  
Thomas Granlund ◽  
Nils Olsson
Keyword(s):  
Cross Sections ◽  
Nuclear Physics ◽  
Nuclear Data ◽  
Single Event Upset ◽  
Single Event ◽  
Neutron Data ◽  
Neutron Energy Range ◽  
Single Event Upsets ◽  
Technology Generation ◽  
Spallation Reactions

AbstractThis article approaches single-event upset (SEU) problems from the standpoint of experimental nuclear physics, with a focus on certain neutron experiments and neutron data essential for SEU studies. A review is given of some research programs, both basic and applied, that are strongly motivated by SEU applications. Some specific examples are presented from the The (short for Theodor) Svedberg Laboratory (TSL) in Uppsala, Sweden: First, using the quasi-monoenergetic neutron beam, SEU cross sections (of chips) are measured over the neutron energy range of 20–150 MeV. Data from the same technology generation, in general, can be fitted into a simple curve. Second, the particle origins of SEUs are discussed from the framework of neutron–nucleus spallation reactions.

scholarly journals Single-Event Upsets in Microelectronics

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 107-110 ◽  
Author(s):  
Henry H.K. Tang ◽  
Nils Olsson
Keyword(s):  
Circuit Design ◽  
Nuclear Physics ◽  
Radiation Effects ◽  
Materials Science ◽  
Nuclear Data ◽  
Single Event ◽  
Radiation Physics ◽  
Single Event Upsets ◽  
Interdisciplinary Nature ◽  
Silicon Based

AbstractThis article introduces the February 2003 issue of MRS Bulletin on “Single-Event Upsets (SEUs) in Microelectronics.” These radiation effects in devices and circuits have been recognized in recent years as a key reliability concern for many current and future silicon-based technologies. This introduction sets the scope for critical discussions on this subject. The articles in the issue reflect the interdisciplinary nature of SEU research. The contributing authors include experts from several specializations: technology reliability, materials science, device physics, circuit designs, and theoretical and experimental nuclear physics. We review the current understanding of SEU problems from the perspectives of radiation physics, circuit design issues, and global technology developments. The discussions cover the key areas of modeling, circuit analyses, accelerator tests and experiments, basic nuclear data, and environmental neutron measurements.

scholarly journals Validating nuclear data uncertainties obtained from a statistical analysis of experimental data with the “Physical Uncertainty Bounds” method

2020 ◽  
Vol 6 ◽  
pp. 19
Author(s):  
Denise Neudecker ◽  
Morgan Curtis White ◽  
Diane Elizabeth Vaughan ◽  
Gowri Srinivasan
Keyword(s):  
Experimental Data ◽  
Statistical Analysis ◽  
Information Content ◽  
Cross Section ◽  
Cross Sections ◽  
Nuclear Data ◽  
Current Version ◽  
Neutron Data ◽  
Data Standards ◽  
Actual Evaluation

Concerns within the nuclear data community led to substantial increases of Neutron Data Standards (NDS) uncertainties from its previous to the current version. For example, those associated with the NDS reference cross section 239Pu(n,f) increased from 0.6–1.6% to 1.3–1.7% from 0.1–20 MeV. These cross sections, among others, were adopted, e.g., by ENDF/B-VII.1 (previous NDS) and ENDF/B-VIII.0 (current NDS). There has been a strong desire to be able to validate these increases based on objective criteria given their impact on our understanding of various application uncertainties. Here, the “Physical Uncertainty Bounds” method (PUBs) by Vaughan et al. is applied to validate evaluated uncertainties obtained by a statistical analysis of experimental data. We investigate with PUBs whether ENDF/B-VII.1 or ENDF/B-VIII.0 239Pu(n,f) cross-section uncertainties are more realistic given the information content used for the actual evaluation. It is shown that the associated conservative (1.5–1.8%) and minimal realistic (1.1–1.3%) uncertainty bounds obtained by PUBs enclose ENDF/B-VIII.0 uncertainties and indicate that ENDF/B-VII.1 uncertainties are underestimated.

Single-Event Upsets in Microelectronics: Fundamental Physics and Issues

MRS Bulletin ◽  
2003 ◽  
Vol 28 (2) ◽  
pp. 111-116 ◽  
Author(s):  
Henry H.K. Tang ◽  
Kenneth P. Rodbell
Keyword(s):  
Cosmic Rays ◽  
Cross Sections ◽  
Background Radiation ◽  
Complementary Metal Oxide Semiconductor ◽  
Alpha Particles ◽  
Oxide Semiconductor ◽  
Thermal Neutrons ◽  
Single Event ◽  
Single Event Upsets ◽  
Future Technologies

AbstractWe review the current understanding of single-event upsets (SEUs) in microelectronic devices. In recent years, SEUs have been recognized as one of the key reliability concerns for both current and future technologies. We identify the major sources of SEUs that impact many commercial products: (1) alpha particles in packaging materials, (2) background radiation due to cosmic rays, and (3) thermal neutrons in certain device materials. The origins of SEUs are examined from the standpoint of the fundamental atomic and nuclear interactions between the intruding particles (alpha particles, cosmic rays, and thermal neutrons) and semiconductor materials. We analyze field funneling, which is a key mechanism of charge collection in a device struck by an ionizing particle. Next, we formulate how SEU cross sections and SEU rates are calculated and discuss how these basic quantities are related to experiments. Finally, we summarize the major SEU issues regarding modeling, bulk complementary metal oxide semiconductor technologies, and research on future, exploratory technologies.

scholarly journals Synergy of Nuclear Data and Nuclear Theory Online

2020 ◽  
Vol 239 ◽  
pp. 03021
Author(s):  
Andrey Denikin ◽  
Alexander Karpov ◽  
Mikhail Naumenko ◽  
Vladimir Rachkov ◽  
Viacheslav Samarin ◽  
...  
Keyword(s):  
Experimental Data ◽  
Knowledge Base ◽  
Cross Sections ◽  
Nuclear Physics ◽  
Nuclear Research ◽  
Nuclear Data ◽  
Reaction Cross ◽  
Nuclear Dynamics ◽  
Wide Range ◽  
Educational Applications

The paper describes the NRV web knowledge base on low-energy nuclear physics developed in the Joint Institute for Nuclear Research. The NRV knowledge base working through the Internet integrates a large amount of digitized experimental data on the properties of nuclei and nuclear reaction cross sections with a wide range of computational programs for modeling of nuclear properties and nuclear dynamics. Today, the NRV becomes a powerful instrument for nuclear physics research as well as for educational applications. Advantages of the functioning scheme of the knowledge base provide the synergy of coexistence of the experimental data and computational codes within one platform.

scholarly journals Study of the Li(d, xn) reaction for the development of accelerator-based neutron sources

2020 ◽  
Vol 239 ◽  
pp. 20012
Author(s):  
Yukinobu Watanabe ◽  
Hiroki Sadamatsu ◽  
Shouhei Araki ◽  
Keita Nakano ◽  
Shoichiro Kawase ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Cross Sections ◽  
Nuclear Physics ◽  
Production Cross ◽  
Nuclear Data ◽  
Neutron Production ◽  
Spectral Shape ◽  
Model Calculations ◽  
Neutron Sources ◽  
Organic Scintillators

Double-differential neutron production cross sections (DDXs) for deuteron-induced reactions on Li at 200 MeV were measured for emission angles ranging from 0◦ to 25◦ in steps of 5◦ by means of a time of flight (TOF) method with EJ301 liquid organic scintillators at the Research Center for Nuclear Physics (RCNP), Osaka University. The measured DDXs were compared to theoretical model calculations with the DEURACS and PHITS codes and TENDL-2017 nuclear data. It was found that the DEURACS calculation is in better agreement with the measured DDXs than the PHITS calculation, while TENDL-2017 fails to reproduce both the spectral shape and magnitude of the measured DDXs for all angles.

Parametric Variability Affecting 45 nm SOI SRAM Single Event Upset Cross-Sections

2010 ◽  
Author(s):  
Thomas Daniel Loveless ◽  
Michael L. Alles ◽  
Dennis R. Ball ◽  
Kevin M. Warren ◽  
Lloyd W. Massengill
Keyword(s):  
Cross Sections ◽  
Single Event Upset ◽  
Single Event

Single Event Upset cross sections at various data rates

1996 ◽  
Vol 43 (6) ◽  
pp. 2862-2867 ◽  
Author(s):  
R.A. Reed ◽  
M.A. Carts ◽  
P.W. Marshall ◽  
C.J. Marshall ◽  
S. Buchner ◽  
...  
Keyword(s):  
Cross Sections ◽  
Single Event Upset ◽  
Single Event ◽  
Data Rates

Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

2013 ◽  
Vol 60 (6) ◽  
pp. 4368-4373 ◽  
Author(s):  
N. J. Gaspard ◽  
S. Jagannathan ◽  
Z. J. Diggins ◽  
M. P. King ◽  
S-J. Wen ◽  
...  
Keyword(s):  
Cross Sections ◽  
Heavy Ion ◽  
Single Event Upset ◽  
Single Event ◽  
Flip Flop ◽  
Technology Scaling
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