Issues in High-ĸ Gate Stack Interfaces

MRS Bulletin ◽  
2002 ◽  
Vol 27 (3) ◽  
pp. 212-216 ◽  
Author(s):  
Veena Misra ◽  
Gerry Lucovsky ◽  
Gregory Parsons
Keyword(s):  
Film Growth ◽  
Gate Stack ◽  
High Q ◽  
Gate Electrodes ◽  
Critical Areas ◽  
Fundamental Understanding ◽  
Electrode Interface ◽  
High Dielectric ◽  
Physical And Chemical ◽  
Nonuniform Material

AbstractWe address current challenges in the fundamental understanding of physical and chemical processes that occur in the fabrication of the transistor gate stack structure. Critical areas include (1) the interface between bulk silicon and high-dielectric-constant (high-ĸ) insulators, (2) the interface between high-ĸ insulators and advanced gate electrodes, and (3) the internal interfaces that form within dielectric stacks with nonuniform material and structure compositions. We approach this topic from a fundamental understanding of bonding and electronic structure at the interfaces, and of film-growth kinetics in comparison with thermodynamics predictions. Implications for the dielectric/electrode interface with metallic gates and issues with integration will also be presented.

Microstructural characterization of YBaCuO Films on LaAlO3 substrates

1989 ◽  
Vol 47 ◽  
pp. 180-181
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
N. Lewis ◽  
L. G. Turner
Keyword(s):  
Dielectric Constant ◽  
Single Crystal ◽  
Film Growth ◽  
Microstructural Characterization ◽  
Lattice Parameter ◽  
Film Plane ◽  
Substrate Material ◽  
High Loss ◽  
Amorphous Substrates ◽  
High Dielectric

There have been a large number of recent studies of the growth of Y-Ba-Cu-O thin films, and these studies have employed a variety of substrates and growth techniques. To date, the highest values of Tc and Jc have been found for films grown by sputtering or coevaporation on single-crystal SrTiO3 substrates, which produces a uniaxially-aligned film with the YBa2Cu3Ox c-axis normal to the film plane. Multilayer growth of films on the same substrate produces a triaxially-aligned film (regions of the film have their c-axis parallel to each of the three substrate <100> directions) with lower values of Jc. Growth of films on a variety of other polycrystalline or amorphous substrates produces randomly-oriented polycrystalline films with low Jc. Although single-crystal SrTiO3 thus produces the best results, this substrate material has a number of undesireable characteristics relative to electronic applications, including very high dielectric constant and a high loss tangent at microwave frequencies. Recently, Simon et al. have shown that LaAlO3 could be used as a substrate for YBaCuO film growth. This substrate is essentially a cubic perovskite with a lattice parameter of 0.3792nm (it has a slight rhombohedral distortion at room temperature) and this material exhibits much lower dielectric constant and microwave loss tangents than SrTiO3. It is also interesting from a film growth standpoint since it has a slightly smaller lattice parameter than YBa2Cu3Ox (a=0.382nm, b=c/3=0.389nm), while SrTiO3 is slightly larger (a=0.3905nm).

scholarly journals Structure Determination of C23H19N4OBr from Synchrotron Data

2014 ◽  
Vol 70 (a1) ◽  
pp. C141-C141
Author(s):  
Ozen Ozgen ◽  
Engin Kendi ◽  
Semra Koyunoglu ◽  
Akgul Yesilada ◽  
Hwo-Shuenn Sheu
Keyword(s):  
Powder Diffraction ◽  
Structural Information ◽  
Chemical Properties ◽  
Biological Properties ◽  
Cell Parameters ◽  
Fundamental Understanding ◽  
Physical And Chemical ◽  
Radiation Research ◽  
And Chemical Properties

A significant part of medicine is based on the discovery and development of drugs. It is very important to know the crystal structure of pharmaceutical compounds for fundamental understanding of structure, physical and chemical properties. Many of these materials are available only as powders. So any structural information must be obtained from powder diffraction. I am going to present following the stages while solving the structure of C23H19N4OBr, 2-[3-phenyl-4(m-bromophenyl)-2-pyrazolin-1-yl]-3-methyl-4(3H)-quinazolinone, from 2-pyrazolines derivatives. The compounds are known to display various biological properties such as fungicidal insecticidal, anti bacterial, anti viral activities, pharmacological properties such as antiinflammatory agents and have industral properties(1). The powder diffraction data was collected with Debye Scherrer camera at the BL01C2 beamline at room temperature in National Synchrotron Radiation Research Center(NSRRC), Taiwan. X-ray of wavelength was 1.0333Å. This compound crystallizes in orthorhombic system space group P bca, Z=8, unit cell parameters of a=25.83(1)Å, b=15.55(5)Å, c=10.63(3)Å, and V=4266.0(10)Å3. Reliability factors were reached Rwp=0.075, Rp=0.053, RB=0.086 ve S=1.31 after Rietveld refinement.

High dielectric constant and high-Q in microwave ceramics of SrTiO3 co-doped with aluminum and niobium

2018 ◽  
Vol 101 (5) ◽  
pp. 1835-1840 ◽  
Author(s):  
Siliang Chen ◽  
Lingxia Li ◽  
Shihui Yu ◽  
Haoran Zheng ◽  
Zheng Sun
Keyword(s):  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Microwave Ceramics ◽  
High Q ◽  
High Dielectric ◽  
Co Doped

Reproducible growth of Highly Oriented (OO1) YSZ Films on Amorphous AiO2 Substrates by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
G. Doubinina ◽  
G. T. Stauf
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Silicon On Insulator ◽  
Buffer Layers ◽  
Amorphous Substrate ◽  
Fundamental Understanding ◽  
Amorphous Substrates ◽  
Potential Applications ◽  
Superconductor Thin Films ◽  
Deposition Conditions

ABSTRACTThe possibility of growing crystallographically aligned films of good quality on polycrystalline or amorphous substrates is of great interest, both for fundamental understanding of film growth mechanisms, and for potential applications such as buffer layers for silicon-on-insulator devices and an epitaxial transition layer for cuprate superconductor thin films grown on substrates with large misfits. Deposition conditions for yttria-stabilized zirconia (YSZ) thin films were investigated and optimized, and highly (001) oriented YSZ films were reproducibly prepared on amorphous substrates by MOCVD. We believe that the formation of a highly oriented crystalline film on an amorphous substrate can be interpreted in terms of the inherent features of MOCVD process, and a working model of this process is suggested.

Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack

2019 ◽  
Vol 13 (2) ◽  
pp. 151-159
Author(s):  
Kao-Shuo Chang ◽  
Martin Green ◽  
John S. Suehle ◽  
Jason Hattrick-Simpers ◽  
Ichiro Takeuchi ◽  
...  
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Stack ◽  
Gate Electrodes

scholarly journals Fractal Behavior in the Clarification Process of Cane Sugar Production

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Xiaomo Yu ◽  
Junke Ye ◽  
Jing Hu ◽  
Xiaoping Liao ◽  
Jianbo Gao
Keyword(s):  
Long Range ◽  
Industrial Process ◽  
Cane Sugar ◽  
Chemical Processes ◽  
Sugar Production ◽  
Long Range Correlations ◽  
Sugar Syrup ◽  
Fundamental Understanding ◽  
Physical And Chemical

Cane sugar production is an important industrial process. One of the most important steps in cane sugar production is the clarification process, which provides high-quality, concentrated sugar syrup crystal for further processing. To gain fundamental understanding of the physical and chemical processes associated with the clarification process and help design better approaches to improve the clarification of the mixed juice, we explore the fractal behavior of the variables pertinent to the clarification process. We show that the major variables in this key process all show persistent long-range correlations, for time scales up to at least a few days. Persistent long-range correlations amount to unilateral deviations from a preset target. This means that when the process is in a desired mode such that the target variables, color of the produced sugar and its clarity degree, both satisfy preset conditions, they will remain so for a long period of time. However, adversity could happen, in the sense that when they do not satisfy the requirements, the adverse situation may last quite long. These findings have to be explicitly accounted for when designing active controlling strategies to improve the quality of the produced sugar.

EFFECT OF GATE ELECTRODES ON STRUCTURE AND ELECTRICAL PROPERTIES OF SPUTTERED HfO2 THIN FILMS

2012 ◽  
Vol 26 (25) ◽  
pp. 1250161
Author(s):  
MING DONG ◽  
HAO WANG ◽  
LIANGPING SHEN ◽  
CONG YE ◽  
QINXIANG WEI
Keyword(s):  
Electric Field ◽  
Hafnium Oxide ◽  
Conduction Mechanism ◽  
Nitrogen Atmosphere ◽  
Schottky Emission ◽  
Mos Capacitors ◽  
Gate Electrodes ◽  
Transmission Electron ◽  
Trap Assisted Tunneling ◽  
High Dielectric

High dielectric hafnium oxide films were grown by magnetron sputtering and post heat treatment in nitrogen atmosphere at 500°C for 30 min using vacuum annealing furnace. The film keeps amorphous at 500°C and has better interface quality as revealed by X-ray diffraction and transmission electron microscopy. The influence of TiN and Pt electrodes on the electrical property of the film was compared. For the annealed films, TiN electrode was presented as the optimal one. For the conduction mechanism of Pt / HfO 2/p- Si MOS capacitors under gate electron injection, the dominant conduction mechanism at low electric field is Schottky emission. At high electric field, the conversion of current transport mechanism from Schottky emission to trap-assisted tunneling for the annealed HfO 2 film occurs at 0.64 MV/cm.

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices

2019 ◽  
Author(s):  
B.J. O'Sullivan ◽  
R. Ritzenthaler ◽  
G. Rzepa ◽  
Z. Wu ◽  
E. Dentoni Litta ◽  
...  
Keyword(s):  
Metal Gate ◽  
Gate Stack ◽  
High Q

Electronic Structure and Band Offsets of High-Dielectric-Constant Gate Oxides

MRS Bulletin ◽  
2002 ◽  
Vol 27 (3) ◽  
pp. 217-221 ◽  
Author(s):  
John Robertson
Keyword(s):  
Dielectric Constant ◽  
Electronic Structure ◽  
Gate Dielectric ◽  
Complementary Metal Oxide Semiconductor ◽  
Band Alignment ◽  
Oxide Semiconductor ◽  
Materials Properties ◽  
Modeling Approach ◽  
High Dielectric ◽  
Physical And Chemical

AbstractIdentifying candidate materials to replace SiO2 as the gate dielectric for complementary metal oxide semiconductor (CMOS) applications is a difficult task. Proper assessment of the critical materials requirements is essential, and it is important to devise an approach to predict materials properties without having to make many unnecessary measurements on high-ĸ materials. Such an approach helps to eliminate unlikely candidates and focus on the most promising ones. Clearly, this type of modeling approach requires an understanding of several physical and chemical characteristics, including the bonding and electronic structure, band alignment with Si, and the nature of the dielectric constant and interface properties. We present a critical assessment of some existing methods and models of materials properties, as well as a comparison of the present modeling approach with some experimentally determined values.

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