scholarly journals Vapor Crystal Growth and Characterization: ZnSe and Related II–VI Compound Semiconductors by Ching-Hua Su Springer, 2020 215 pages, $139.99 ISBN 978-3-030-39654-1

MRS Bulletin ◽  
2020 ◽  
Vol 45 (8) ◽  
pp. 677-677
Author(s):  
James Edgar
Keyword(s):  
Crystal Growth ◽  
Compound Semiconductors

scholarly journals Crystal growth and characterization of Cu2-II-IV-S4 compound semiconductors.

2000 ◽  
Vol 12 (1/2) ◽  
pp. 99-100 ◽  
Author(s):  
Tomohiko ICHIKAWA ◽  
Takashi MAEDA ◽  
Hiroaki MATSUSHITA ◽  
Akinori KATSUI
Keyword(s):  
Crystal Growth ◽  
Compound Semiconductors

INDIUM SEMI-CONDUCTOR GRADE

Alloy Digest ◽  
1998 ◽  
Vol 47 (3) ◽  
Keyword(s):  
Compressive Strength ◽  
Crystal Growth ◽  
High Temperature ◽  
Physical Properties ◽  
Single Crystal ◽  
High Purity ◽  
Electronic Device ◽  
Compound Semiconductors ◽  
Temperature Performance ◽  
Device Technology

Abstract Semiconductor grade indium products are available in several high purity levels including 7N, 6N5WCI (with controlled impurities), 6N5, and 6N. High purity indium is used in electronic device technology, crystal growth in epitaxial processes, and the production of single crystal III-V compound semiconductors. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and compressive strength. It also includes information on high temperature performance. Filing Code: IN-3. Producer or source: Indium Corporation.

NEW SUPERLATTICE ARCHITECTURE IN III-V COMPOUND SEMICONDUCTORS VIA CONTROL OF EPITAXY ON AN ATOMIC SCALE

1985 ◽  
Vol 56 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Compound Semiconductors ◽  
Atomic Scale ◽  
Prototype System ◽  
Compositional Stability

AbstractThe perfection and compositional stability of alternate monolayer compounds (AMC) structures deposited by molecular beam epitaxy as a function of several crystal growth parameters are reviewed. By using the (GaAs)1 - (AlAs)1 AMC structure as a prototype system, the effects of substrate temperature, and orientation on the AMC ordering are presented. Conditions for producing new superlattice architectures are discussed.

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