Phase Diagrams and Crystal Growth of Compound Semiconductors

1980 ◽  
Vol 48 (4) ◽  
pp. 611-620 ◽  
Author(s):  
Jan Venkrbec

2000 ◽  
Vol 12 (1/2) ◽  
pp. 99-100 ◽  
Author(s):  
Tomohiko ICHIKAWA ◽  
Takashi MAEDA ◽  
Hiroaki MATSUSHITA ◽  
Akinori KATSUI

1989 ◽  
Vol 148 ◽  
Author(s):  
G. P. Schwartz

ABSTRACTThe phases which result from the oxidation of III-V compound semiconductors can be predicted from a knowledge of the condensed phase portion of their equilibrium phase diagrams. Examples will be shown for arsenides, antimonides, and phosphides. Use of these diagrams explicitly presumes equilibrium growth conditions, and that assumption often fails. In such cases kinetic rather than thermodynamic factors dominate the determination of the observed phases. Examples of this phenomenon for anodic oxidation will be presented. Recent interest in high pressure oxidation conditions as a means of alleviating kinetic limitations will be discussed for InP. The phase diagrams can also be used to predict interfacial reactions under certain conditions and data for GaAs will serve to illustrate this point.


Alloy Digest ◽  
1998 ◽  
Vol 47 (3) ◽  

Abstract Semiconductor grade indium products are available in several high purity levels including 7N, 6N5WCI (with controlled impurities), 6N5, and 6N. High purity indium is used in electronic device technology, crystal growth in epitaxial processes, and the production of single crystal III-V compound semiconductors. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, tensile properties, and compressive strength. It also includes information on high temperature performance. Filing Code: IN-3. Producer or source: Indium Corporation.


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