scholarly journals Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

MRS Bulletin ◽  
2018 ◽  
Vol 43 (5) ◽  
pp. 340-346 ◽  
Author(s):  
Thomas Mikolajick ◽  
Stefan Slesazeck ◽  
Min Hyuk Park ◽  
Uwe Schroeder
Keyword(s):  
Hafnium Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Random Access ◽  
Image Position ◽  
Ferroelectric Random Access Memories

Abstract

scholarly journals Indacenodithiophene–benzothiadiazole organic field-effect transistors with gravure-printed semiconductor and dielectric on plastic

2015 ◽  
Vol 5 (4) ◽  
pp. 599-603 ◽  
Author(s):  
Stuart G. Higgins ◽  
Beinn V.O. Muir ◽  
Martin Heeney ◽  
Alasdair J. Campbell
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Image Position

Abstract

Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

2007 ◽  
Vol 90 (12) ◽  
pp. 123502 ◽  
Author(s):  
C. J. Cochrane ◽  
P. M. Lenahan ◽  
J. P. Campbell ◽  
G. Bersuker ◽  
A. Neugroschel
Keyword(s):  
Hafnium Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Negative Bias ◽  
Metal Gate ◽  
Trapping Centers

Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

2011 ◽  
Vol 181-182 ◽  
pp. 343-348
Author(s):  
K.C. Narasimhamurthy ◽  
Roy Paily Palathinkal
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Channel Length ◽  
Performance Comparison ◽  
Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

Reduced-temperature solution-processed transparent oxide low-voltage-operable field-effect transistors

2015 ◽  
Vol 5 (4) ◽  
pp. 605-611 ◽  
Author(s):  
Yu Liu ◽  
Kyle McElhinny ◽  
Olivia Alley ◽  
Paul G. Evans ◽  
Howard E. Katz
Keyword(s):  
Field Effect ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Temperature Solution ◽  
Transparent Oxide ◽  
Image Position ◽  
Reduced Temperature

Abstract

Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors

2017 ◽  
Vol 9 (4) ◽  
pp. 3792-3798 ◽  
Author(s):  
Halid Mulaosmanovic ◽  
Johannes Ocker ◽  
Stefan Müller ◽  
Uwe Schroeder ◽  
Johannes Müller ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Field Effect ◽  
Field Effect Transistors
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