Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

C. J. Cochrane; P. M. Lenahan; J. P. Campbell; G. Bersuker; A. Neugroschel

doi:10.1063/1.2715141

Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

Applied Physics Letters ◽

10.1063/1.2715141 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123502 ◽

Cited By ~ 11

Author(s):

C. J. Cochrane ◽

P. M. Lenahan ◽

J. P. Campbell ◽

G. Bersuker ◽

A. Neugroschel

Keyword(s):

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Negative Bias ◽

Metal Gate ◽

Trapping Centers

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Negative Bias Stressing Interface Trapping Centers in Metal Gate Hafnium Oxide Field Effect Transistors Using Spin Dependent Recombination

2006 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2006.305201 ◽

2006 ◽

Cited By ~ 2

Author(s):

C.J. Cochrane ◽

P. Lenahan ◽

J.P. Campbell ◽

G. Bersuker ◽

A. Neugroschel

Keyword(s):

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Negative Bias ◽

Metal Gate ◽

Trapping Centers

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Investigation of Positive and Negative Bias Temperature Instability of High-κ Dielectric Metal Gate Metal–Oxide–Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.036503 ◽

2013 ◽

Vol 52 (3R) ◽

pp. 036503 ◽

Cited By ~ 1

Author(s):

Da-Cheng Huang ◽

Jeng Gong ◽

Chih-Fang Huang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

Applied Physics Letters ◽

10.1063/1.2766667 ◽

2007 ◽

Vol 91 (3) ◽

pp. 033511 ◽

Cited By ~ 16

Author(s):

Chang Yong Kang ◽

Rino Choi ◽

M. M. Hussain ◽

Jinguo Wang ◽

Young Jun Suh ◽

...

Keyword(s):

Metal Oxide ◽

Titanium Nitride ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Electrode ◽

Metal Gate

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Investigation of an anomalous hump in gate current after negative-bias temperature-instability in HfO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4773479 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012103 ◽

Cited By ~ 11

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Temperature Instability ◽

Bias Temperature Instability

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Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

Applied Physics Letters ◽

10.1063/1.4947439 ◽

2016 ◽

Vol 108 (17) ◽

pp. 173504 ◽

Cited By ~ 1

Author(s):

Hsi-Wen Liu ◽

Ting-Chang Chang ◽

Jyun-Yu Tsai ◽

Ching-En Chen ◽

Kuan-Ju Liu ◽

...

Keyword(s):

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Trap State ◽

Metal Gate ◽

Hot Carrier ◽

High K ◽

Zirconium Doping

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Impact of nitridation on recoverable and permanent negative bias temperature instability degradation in high-k/metal-gate p-type metal oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3058740 ◽

2009 ◽

Vol 27 (1) ◽

pp. 463 ◽

Cited By ~ 3

Author(s):

M. Aoulaiche ◽

B. Kaczer ◽

Ph. J. Roussel ◽

R. O’Connor ◽

M. Houssa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Metal Gate ◽

Bias Temperature Instability ◽

High K ◽

P Type

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Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4739525 ◽

2012 ◽

Vol 101 (5) ◽

pp. 052105 ◽

Cited By ~ 4

Author(s):

Szu-Han Ho ◽

Ting-Chang Chang ◽

Chi-Wei Wu ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Metal Gate ◽

Gate Current ◽

Bias Stress

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Comprehensive Analysis of Positive and Negative Bias Temperature Instabilities in High-k/Metal Gate Stack Metal–Oxide–Silicon Field Effect Transistors with Equivalent Oxide Thickness Scaling to Sub-1 nm

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2354 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2354-2359 ◽

Cited By ~ 9

Author(s):

Motoyuki Sato ◽

Kikuo Yamabe ◽

Kenji Shiraishi ◽

Seiichi Miyazaki ◽

Keisaku Yamada ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Oxide Thickness ◽

Comprehensive Analysis ◽

Negative Bias ◽

Equivalent Oxide Thickness ◽

Metal Gate ◽

High K ◽

Bias Temperature Instabilities

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Dominant Device Instability Mechanism in Scaled Metal–Oxide–Semiconductor Field-Effect Transistors with Hafnium Oxide Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091404 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091404 ◽

Cited By ~ 2

Author(s):

Rino Choi ◽

Tea Wan Kim ◽

Hokyung Park ◽

Byoung Hun Lee

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Instability Mechanism

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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