Study of layered diamond like carbon and PECVD fluorocarbon films for ultra low dielectric constant interlayer dielectric applications

2016 ◽  
Vol 31 (8) ◽  
pp. 1027-1037 ◽  
Author(s):  
Nandini G. Sundaram ◽  
Seetharaman Ramachandran ◽  
Lawrence Overzet ◽  
Matthew Goeckner ◽  
Gil-Sik Lee
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Diamond Like Carbon ◽  
Interlayer Dielectric ◽  
Fluorocarbon Films ◽  
Low Dielectric ◽  
Image Position

Abstract

Low-Dielectric-Constant Nonporous Fluorocarbon Films for Interlayer Dielectric

2008 ◽  
Vol 47 (4) ◽  
pp. 2515-2520 ◽  
Author(s):  
Azumi Itoh ◽  
Atsutoshi Inokuchi ◽  
Seiji Yasuda ◽  
Akinobu Teramoto ◽  
Tetsuya Goto ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Fluorocarbon Films ◽  
Low Dielectric

Intrinsic low dielectric behaviour of a highly thermally stable Sr-based metal–organic framework for interlayer dielectric materials

2014 ◽  
Vol 2 (19) ◽  
pp. 3762-3768 ◽  
Author(s):  
Muhammad Usman ◽  
Cheng-Hua Lee ◽  
Dung-Shing Hung ◽  
Shang-Fan Lee ◽  
Chih-Chieh Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Organic Framework ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Water Molecules ◽  
Compound A ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Metal Organic ◽  
Organic Framework

A Sr-based metal–organic framework exhibits an intrinsic low dielectric constant after removing the water molecules. A low dielectric constant and high thermal stability make this compound a candidate for use as a low-k material.

Siloxane Polymers as Low Dielectric Materials for Microelectronics

1995 ◽  
Vol 390 ◽  
Author(s):  
C. P. Wong
Keyword(s):  
Dielectric Constant ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Dimensional Structure ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
High Dielectric

ABSTRACTA modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Investigations of The Low Dielectric Constant Fluorinated Polyimide for Use as The Interlayer Dielectric in ULSI

1995 ◽  
Vol 381 ◽  
Author(s):  
Y.K. Lee ◽  
S.P. Murarka ◽  
S. -P. Jeng ◽  
B. Auman
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Effect Of Temperature ◽  
Low Dielectric Constant ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Interlayer Dielectric ◽  
Integrated Electronics ◽  
Low Dielectric ◽  
Fluorinated Polyimide

AbstractLow dielectric constant interlayer dielectric ( ILD) materials are required for the advanced silicon integrated electronics such as those in the ULSI era[3, 10]. We have investigated several such materials. In this paper the results of our investigations of the materials and electrical properties, processing ( to form ILD ), and applicability of a DuPont fluorinated polyimide are described and discussed. Weight loss, FTIR, and ellipsometric measurements have been carried out. The DuPont fluorinated polyimide thin film was observed to be thermally stable up to 450°C, which is monitored by using dynamic TGA with a ramping rate of 10°C/min or 5°C/min in N2 Ambient. Also MIPOS capacitor characterization, effect of temperature and moisture on these properties have been determined. The dielectric constant was observed to be as low as 2.5 and the refractive index is around 1.63, both being stable up to 450°C. However, the DuPont Fluorinated polyimide exhibited a flat band voltage shift on C-V curve after 400°C annealing in vacuum environments for 1 hr. Compatibility with copper as the interconnecting metal has been determined and discussed[8]. It is concluded that this polymer is a possible candidate for ILD application.

Novel Materials as Interlayer Low-K Dielectrics for CMOS Interconnect Applications

2011 ◽  
Vol 110-116 ◽  
pp. 5380-5383
Author(s):  
Tejas R. Naik ◽  
Veena R. Naik ◽  
Nisha P. Sarwade
Keyword(s):  
Dielectric Constant ◽  
Integrated Circuits ◽  
Dielectric Materials ◽  
Low Dielectric Constant ◽  
Interlayer Dielectric ◽  
Novel Materials ◽  
Low Dielectric ◽  
Processing Properties ◽  
New Generation ◽  
Low K

Scaling down the integrated circuits has resulted in the arousal of number of problems like interaction between interconnect, crosstalk, time delay etc. These problems can be overcome by new designs and by use of corresponding novel materials, which may be a solution to these problems. In the present paper we try to put forward very recent development in the use of novel materials as interlayer dielectrics (ILDs) having low dielectric constant (k) for CMOS interconnects. The materials presented here are porous and hybrid organo-inorganic new generation interlayer dielectric materials possessing low dielectric constant and better processing properties.

Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

2001 ◽  
Vol 714 ◽  
Author(s):  
Yoon-Hae Kim ◽  
Moo Sung Hwang ◽  
Young Lee ◽  
Hyeong Joon Kim
Keyword(s):  
Dielectric Constant ◽  
Etch Rate ◽  
Silicon Oxide ◽  
Hydrogen Plasma ◽  
Low Dielectric Constant ◽  
Film Properties ◽  
Interlayer Dielectric ◽  
Low Dielectric ◽  
Process Compatibility

ABSTRACTCarbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.

Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric

2007 ◽  
Author(s):  
Azumi Itoh ◽  
Atsutoshi Inokuchi ◽  
Seiji Yasuda ◽  
Akinobu Teramoto ◽  
Tetsuya Goto ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Fluorocarbon Films ◽  
Low Dielectric

Low Dielectric Constant Fluorocarbon Films

1998 ◽  
Vol 544 ◽  
Author(s):  
K. K. S. Lau ◽  
K. K. Gleason
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Surface Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Market Potential ◽  
Low Dielectric Constant ◽  
Fluorocarbon Films ◽  
Low Dielectric

IntroductionChemical vapor deposition (CVD) continues to generate immutable interest as a method of producing thin fluorocarbon films. This impetus stems from both the process advantages of CVD and the extensive market potential for the resultant films. Fluorocarbon films find extremely diverse applications because of their unique electrical, chemical and surface properties. They are currently being evaluated, among other applications, as dielectric interconnects in microelectronic circuits1–3 and as passivation coatings in clinical devices.

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