Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

2013 ◽  
Vol 28 (20) ◽  
pp. 2771-2784 ◽  
Author(s):  
Benjamin L. French ◽  
Sean W. King
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Defect States ◽  
High K ◽  
Electronic Defect ◽  
Image Position ◽  
Electron Energy Loss

Abstract

A Poor Man’s Approach to Semi-Quantitative Analysis with Electron Energy Loss Spectroscopy

1980 ◽  
Vol 38 ◽  
pp. 110-111
Author(s):  
M. Isaacson
Keyword(s):  
Quantitative Analysis ◽  
Energy Loss ◽  
Electron Energy ◽  
Cross Section ◽  
Electron Energy Loss Spectroscopy ◽  
Excitation Cross Section ◽  
Incident Electron ◽  
Integral Cross Section ◽  
Image Position ◽  
Electron Energy Loss

In an earlier paper1 it was found that to a good approximation, the efficiency of collection of electrons that had lost energy due to an inner shell excitation could be written as where σE was the total excitation cross-section and σE(θ, Δ) was the integral cross-section for scattering within an angle θ and with an energy loss up to an energy Δ from the excitation edge, EE. We then obtained: where , with P being the momentum of the incident electron of velocity v. The parameter r was due to the assumption that d2σ/dEdΩ∞E−r for energy loss E. In reference 1 it was assumed that r was a constant.

Annealing-induced lattice recovery in room-temperature xenon irradiated CeO2: X-ray diffraction and electron energy loss spectroscopy experiments

2015 ◽  
Vol 30 (9) ◽  
pp. 1555-1562 ◽  
Author(s):  
Janne Pakarinen ◽  
Lingfeng He ◽  
Abdel-Rahman Hassan ◽  
Yongqiang Wang ◽  
Mahima Gupta ◽  
...  
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Image Position ◽  
Electron Energy Loss

Abstract

scholarly journals Band gap and defect states of MgO thin films investigated using reflection electron energy loss spectroscopy

AIP Advances ◽  
2015 ◽  
Vol 5 (7) ◽  
pp. 077167 ◽  
Author(s):  
Sung Heo ◽  
Eunseog Cho ◽  
Hyung-Ik Lee ◽  
Gyeong Su Park ◽  
Hee Jae Kang ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Band Gap ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Defect States ◽  
Electron Energy Loss

Measuring optical properties of individual SnO2 nanowires via valence electron energy-loss spectroscopy

2017 ◽  
Vol 32 (13) ◽  
pp. 2479-2486 ◽  
Author(s):  
Derek R. Miller ◽  
Robert E. Williams ◽  
Sheikh A. Akbar ◽  
Pat A. Morris ◽  
David W. McComb
Keyword(s):  
Optical Properties ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Valence Electron ◽  
Sno2 Nanowires ◽  
Image Position ◽  
Electron Energy Loss

Abstract

scholarly journals Ultrafast electron energy-loss spectroscopy in transmission electron microscopy

MRS Bulletin ◽  
2018 ◽  
Vol 43 (7) ◽  
pp. 497-503 ◽  
Author(s):  
Enrico Pomarico ◽  
Ye-Jin Kim ◽  
F. Javier García de Abajo ◽  
Oh-Hoon Kwon ◽  
Fabrizio Carbone ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Transmission Electron ◽  
Image Position ◽  
Electron Energy Loss

Abstract

Absolute determination of surface atomic concentration by reflection electron energy-loss spectroscopy

1988 ◽  
Vol 46 ◽  
pp. 502-503
Author(s):  
Z. L. Wang ◽  
R.F. Egerton
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Crystal Surface ◽  
Resonance Condition ◽  
Atomic Concentration ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Image Position ◽  
Electron Energy Loss

Reflection electron energy-loss spectroscopy (REELS) has been demonstrated as a useful technique for analyzing the structure of crystal surfaces. It is a combination of EELS with reflection electron microscopy (REM) performed in a transmission electron microscope. Here, we suggest a basic theory and experiment which enable REELS to determine absolutely the atomic concentration (atoms per unit volume) at a crystal surface.In the RHEED case, not all the incident electrons will travel an equal distance within the sample (fig. 1A). Under the surface-resonance condition, the incident electrons are propagating parallel or nearly parallel to the crystal surface. Then a mean travelling distance (MTD) D can be defined, along which the excitation of atomic inner shells is equivalent to the total excitation of the atomic inner shells in the dynamical scattering (fig. IB). It can be found from the analysis of experimental data as:(1)

Modulation electron energy loss spectroscopy and its application of quantitative analysis

1993 ◽  
Vol 51 ◽  
pp. 454-455
Author(s):  
Suichu Luo ◽  
John R Dunlap ◽  
David C Joy
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Bound State ◽  
Quantitative Information ◽  
Modulation Scheme ◽  
Free Electrons ◽  
Image Position ◽  
Deconvolution Techniques ◽  
Electron Energy Loss

Electron energy loss spectroscopy (EELS) gives an inportant insight into the variety of excitations a sample may undergo when irradiated by an electron beam. The focus of this work was to simulate electronic excitations within the energy range from a few to several hundred eV. Our recently developed modulation scheme, combines both convolution and deconvolution techniques, to provide quantitative information about elementary inelastic scattering processes without knowledge of sample parameters such as thickness or optical constants.In the low energy loss region of the spectrum the primary excitation mechanisms include interband transitions, and surface and bulk plasmons. In general these individual excitation events overlap in the spectrum. A FFT convolution procedure was developed where the basic inelastic processes may be represented by the dielectric theory . The dielectric function ε is used to describe both single excitations and collective excitations, where Here ωp2=4πNe2/m is the bulk plasmon frequency, N is number of free electrons per unit volume, e and m are the charge and mass of the electron respectively and ω0 is a constant which is finite for a bound state but zero for a free electron.

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