scholarly journals Preparation of small silicon carbide quantum dots by wet chemical etching

2012 ◽  
Vol 28 (1) ◽  
pp. 44-49 ◽  
Author(s):  
David Beke ◽  
Zsolt Szekrényes ◽  
István Balogh ◽  
Zsolt Czigány ◽  
Katalin Kamarás ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Image Position

Abstract

scholarly journals Preparation of Small Silicon Carbide Quantum Dots by Wet Chemical Etching

2012 ◽  
Vol 1468 ◽  
Author(s):  
D. Beke ◽  
Zs. Szekrényes ◽  
I. Balogh ◽  
M. Veres ◽  
É Fazakas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Carbide ◽  
Particle Size ◽  
Chemical Etching ◽  
Blue Emission ◽  
Fabrication Method ◽  
Infrared Measurements ◽  
Wet Chemical ◽  
Wet Chemical Etching

ABSTRACTLuminescence nanocrystals or quantum dots give grate potential for bio-analysis as well as optoelectronics. Here we report an effective and non-expensive fabrication method of silicon carbide nanocrystals, with diameter below 10 nm, based on electroless wet chemical etching. Our samples show strong violet-blue emission in the 410-450 nm region depending on the used solvents and particle size. Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide colloid solvents and also give opportunity to modify the surface easily for specific biological, medical or other application.

A Novel Method of Fabricating SiC-On-Insulator Substrates for Use in MEMS

2001 ◽  
Vol 681 ◽  
Author(s):  
Hung-I Kuo ◽  
Christian Zorman ◽  
Mehran Mehregany
Keyword(s):  
Silicon Carbide ◽  
Wafer Bonding ◽  
Chemical Etching ◽  
Microelectromechanical Systems ◽  
Electronic Devices ◽  
High Deposition Rate ◽  
Method Transfer ◽  
Novel Method ◽  
Wet Chemical ◽  
Wet Chemical Etching

ABSTRACTThis paper reports on a novel, bonding-free method to fabricate silicon carbide-on-insulator (SiCOI) substrates. The process bypasses wafer bonding by using a high deposition rate polysilicon process in conjunction with wet chemical etching to produce wafer-thick polysilicon layers that serve as substrates for the SiCOI structures. Because wafer bonding is not used, insulators of various material types and thickness can be used. Using this method, transfer percentages over 99% are readily achievable. Various applications could benefit from this technology, including high temperature SiC-based microelectromechanical systems (MEMS) and SiC electronic devices.

Characterization of luminescent silicon carbide nanocrystals prepared by reactive bonding and subsequent wet chemical etching

2011 ◽  
Vol 99 (21) ◽  
pp. 213108 ◽  
Author(s):  
David Beke ◽  
Zsolt Szekrényes ◽  
István Balogh ◽  
Miklós Veres ◽  
Éva Fazakas ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching

2000 ◽  
Vol 338-342 ◽  
pp. 481-484 ◽  
Author(s):  
T. Henkel ◽  
Gabriel Ferro ◽  
Shin Ichi Nishizawa ◽  
H. Pressler ◽  
Yasuhito Tanaka ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Structural Characterization ◽  
Chemical Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Wet chemical etching of cadmium telluride photovoltaics for enhanced open-circuit voltage, fill factor, and power conversion efficiency

2019 ◽  
Vol 34 (24) ◽  
pp. 3988-3997 ◽  
Author(s):  
Ebin Bastola ◽  
Fadhil K. Alfadhili ◽  
Adam B. Phillips ◽  
Michael J. Heben ◽  
Randy J. Ellingson
Keyword(s):  
Power Conversion Efficiency ◽  
Cadmium Telluride ◽  
Chemical Etching ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Power Conversion ◽  
Open Circuit ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Image Position

Abstract

Tracing deeply buried InAs∕GaAs quantum dots using atomic force microscopy and wet chemical etching

2005 ◽  
Vol 86 (6) ◽  
pp. 063111 ◽  
Author(s):  
G. Fasching ◽  
K. Unterrainer ◽  
W. Brezna ◽  
J. Smoliner ◽  
G. Strasser
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Chemical Etching ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wet Chemical ◽  
Wet Chemical Etching

scholarly journals Fabrication of Smooth GaN-Based Laser Facets

1999 ◽  
Vol 4 (S1) ◽  
pp. 799-804 ◽  
Author(s):  
D. A. Stocker ◽  
E. F. Schubert ◽  
K. S. Boutros ◽  
J. M. Redwing
Keyword(s):  
Chemical Etching ◽  
Field Effect ◽  
Etch Rate ◽  
Wet Etching ◽  
High Resistivity ◽  
Wet Chemical ◽  
Wet Chemical Etching ◽  
Image Position ◽  
P Type ◽  
Scanning Electron

A method is presented for fabricating fully wet-etched InGaN/GaN laser cavities using hotoenhanced electrochemical wet etching followed by crystallographic wet etching. Crystallographic wet chemical etching of n- and p-type GaN grown on c-plane sapphire is achieved using H3PO4 and various hydroxides, with etch rates as high as 3.2.μm/min. The crystallographic GaN etch planes are {0001}, {100}, {10}, {10}, and {103}. The vertical {100} planes appear perfectly smooth when viewed with a field-effect scanning electron microscope (FESEM), indicating a surface roughness less than 5 nm, suitable for laser facets. The etch rate and crystallographic nature for the various etching solutions are independent of conductivity, as shown by seamless etching of a p-GaN/undoped, high-resistivity GaN homojunction.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

2007 ◽  
Vol 90 (17) ◽  
pp. 173104 ◽  
Author(s):  
Fei Ding ◽  
Lijuan Wang ◽  
Suwit Kiravittaya ◽  
Elisabeth Müller ◽  
Armando Rastelli ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Etching ◽  
Quantum Rings ◽  
Wet Chemical ◽  
Wet Chemical Etching
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